BCP51...BCP53
PNP Silicon AF Transistors
For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCP54...BCP56 (NPN)
4
3 2 1
VPS05163
Type BCP51 BCP51-10 BCP51-16 BCP52 BCP52-10 BCP52-16 BCP53 BCP53-10 BCP53-16
Marking BCP 51 1=B BCP 51-10 1 = B BCP 51-16 1 = B BCP 52 1=B BCP 52-10 1 = B BCP 52-16 1 = B BCP 53 1=B BCP 53-10 1 = B BCP 53-16 1 = B
Pin Configuration 2=C 2=C 2=C 2=C 2=C 2=C 2=C 2=C 2=C 3=E 3=E 3=E 3=E 3=E 3=E 3=E 3=E 3=E 4=C 4=C 4=C 4=C 4=C 4=C 4=C 4=C 4=C
Package SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223
1
Nov-29-2001
BCP51...BCP53
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector-emitter voltage RBE 1k Symbol VCEO VCER VCBO VEBO BCP51 45 45 45 5 BCP52 60 60 60 5 BCP53 80 100 100 5 Unit V
DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 124 °C Junction temperature Storage temperature
Thermal Resistance Junction - soldering point1) RthJS
1For calculation of R thJA please refer to Application Note Thermal Resistance
IC ICM IB IBM Ptot Tj Tstg
1 1.5 100 200 1.5 150 -65 ... 150
A mA W °C
17
K/W
2
Nov-29-2001
BCP51...BCP53
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 V(BR)CEO typ. max.
Unit
V 45 60 80 100 20 nA µA -
BCP51 BCP52 BCP53
Collector-base breakdown voltage IC = 100 µA, IE = 0
V(BR)CBO
BCP51 BCP52 BCP53
45 60 100
V(BR)EBO ICBO ICBO hFE hFE
Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C DC current gain 1) IC = 5 mA, VCE = 2 V DC current gain 1) IC = 150 mA, VCE = 2 V
5 25
BCP51...53 hFE-grp.10 hFE-grp.16
40 63 100
hFE VCEsat VBE(ON)
100 160 -
250 160 250 0.5 1 V
DC current gain 1)
IC = 500 mA, VCE = 2 V Collector-emitter saturation voltage1) IC = 500 mA, IB = 50 mA Base-emitter voltage 1) IC = 500 mA, VCE = 2 V
25 -
AC Characteristics Transition frequency IC = 50 mA, VCE = 10 V, f = 100 MHz
1) Pulse test: t ≤=300µs, D = 2%
fT
-
125
-
MHz
3
Nov-29-2001
BCP51...BCP53
Total power dissipation Ptot = f(TS)
Transition frequency fT = f (IC)
VCE = 10V
10 3 MHz fT 5
BCP 51...53 EHP00260
1.6
W
1.2
P tot
1
0.8
10 2
0.6
5
0.4
0.2
0 0
20
40
60
80
100
120 °C
150
10 1
10 0
10 1
10 2
mA
10 3
TS
ΙC
DC current gain hFE = f (IC) VCE = 2V
BCP 51...53 EHP00261
Collector cutoff current ICBO = f (T A)
VCB = 30V
BCP 51...53 EHP00262
10 3 h FE 5
10 4
Ι CBO
100 C 25 C -50 C
nA 10 3 max
10 5
2
10 2
10 1
typ
10 1 5
10 0
10 0 0 10
10
1
10
2
10
3
mA 10
4
10 -1
0
50
100
C TA
150
ΙC
4
Nov-29-2001
BCP51...BCP53
Base-emitter saturation voltage
IC = f (VBEsat ), hFE = 10
BCP 51...53 EHP00263
Collector-emitter saturation voltage
IC = f (VCEsat), h FE = 10
BCP 51...53 EHP00264
10 4
10 4
ΙC
mA 10 3 100 C 25 C -50C
ΙC
mA 10 3 5 100 C 25 C -50 C
10 2
10 2 5
10 1
10 1 5
10 0
0
0.2
0.4
0.6
0.8
V V BEsat
1.2
10 0
0
0.2
0.4
0.6
V V CEsat
0.8
Permissible pulse load
Ptotmax / PtotDC = f (tp )
BCP 51...53 EHP00265
5 Ptot max Ptot DC 10 2 5
D=
tp T
tp T
10 1 5
D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 0 10 -6
10 -5
10 -4
10 -3
10 -2 tp
s
10 0
5
Nov-29-2001
