Surface mount Si-Epitaxial PlanarTransistors

BCP 51, BCP 52, BCP 53 PNP General Purpose Transistors PNP Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 1.65 4 ±0.2 ±0.3 6.5 ±0.1 3 ±0.2 1.3 W SOT-223 0.04 g Plastic case Kunststoffgehäuse 3.5 Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle 1 0.7 2.3 2 3 3.25 Dimensions / Maße in mm 1 = B 2, 4 = C 3 = E Maximum ratings (TA = 25/C) BCP 51 Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation – Verlustleistung Collector current – Kollektorstrom (DC) Peak Collector current – Koll.-Spitzenstrom Peak Base current – Basis-Spitzenstrom Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur B open E open C open - VCE0 - VCB0 - VEB0 Ptot - IC - ICM - IBM Tj TS 45 V 45 V 7 Grenzwerte (TA = 25/C) BCP 52 60 V 60 V 5V 1.3 W 1) 1A 1.5 A 200 mA 150/C - 65…+ 150/C BCP 53 80 V 100 V Characteristics (Tj = 25/C) Min. Collector-Base cutoff current – Kollektorreststrom IE = 0, - VCB = 30 V IE = 0, - VCB = 30 V, Tj = 125/C Emitter-Base cutoff current – Emitterreststrom IC = 0, - VEB = 5 V - IC = 500 mA, - IB = 50 mA - IEB0 - VCEsat – – - ICB0 - ICB0 – – Kennwerte (Tj = 25/C) Typ. – – – – Max. 100 nA 10 :A 100 nA 500 mV Collector saturation volt. – Kollektor-Sättigungsspg. 2) 1 ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2% 24 01.11.2003 General Purpose Transistors Characteristics (Tj = 25/C) Min. DC current gain – Kollektor-Basis-Stromverhältnis 1) BCP 5x-6 - VCE = 2 V, - IC = 150 mA - VCE = 2 V, - IC = 5 mA - VCE = 2 V, - IC = 500 mA - VCE = 2 V, - IC = 500 mA Gain-Bandwidth Product – Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 100 MHz Thermal resistance – Wärmewiderstand junction to ambient air – Sperrschicht zu umgebender Luft junction to soldering point – Sperrschicht zu Lötpad Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren fT – BCP 5x-10 BCP 5x-16 hFE hFE hFE 40 63 100 63 40 – BCP 51, BCP 52, BCP53 Kennwerte (Tj = 25/C) Typ. – – – – – – 115 MHz RthA RthS Max. 100 160 250 – – 1V – 95 K/W 2) 14 K/W hFE BCP 51... BCP53 hFE - VBEon Base-Emitter voltage – Basis-Emitter-Spannung 1) BCP 54, BCP 55, BCP 56 ) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 01.11.2003 1 2 25