BC 546 ... BC 549 NPN Si-Epitaxial PlanarTransistors
General Purpose Transistors NPN 500 mW TO-92 (10D3) 0.18 g
Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert
Standard Pinning 1=C 2=B 3=E
Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (TA = 25/C)
BC 546 Collector-Emitter-voltage Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation – Verlustleistung Collector current – Kollektorstrom (DC) Peak Coll. current – Kollektor-Spitzenstrom Peak Base current – Basis-Spitzenstrom Peak Emitter current – Emitter-Spitzenstrom Junction temp. – Sperrschichttemperatur Storage temperature – Lagerungstemperatur B open B shorted E open C open VCE0 VCES VCB0 VEB0 Ptot IC ICM IBM - IEM Tj TS 65 V 85 V 80 V 6V
Grenzwerte (TA = 25/C)
BC 547 45 V 50 V 50 V 6V 500 mW ) 100 mA 200 mA 200 mA 200 mA 150/C - 65…+ 150/C
1
BC 548/549 30 V 30 V 30 V 5V
Characteristics, Tj = 25/C
Group A DC current gain – Kollektor-Basis-Stromverhältnis VCE = 5 V, IC = 10 :A VCE = 5 V, IC = 2 mA VCE = 5 V, IC = 100 mA h-Parameters at VCE = 5V, IC = 2 mA, f = 1 kHz Small signal current gain – Stromverst. Input impedance – Eingangsimpedanz Output admittance – Ausgangsleitwert Reverse voltage transfer ratio Spannungsrückwirkung hfe hie hoe hre typ. 220 1.6...4.5 kS 18 < 30 :S typ.1.5 *10-4 hFE hFE hFE typ. 90 110...220 typ. 120
Kennwerte, Tj = 25/C
Group B typ. 150 200...450 typ. 200 typ. 330 3.2...8.5 kS 30 < 60 :S typ. 2 *10-4 Group C typ. 270 420...800 typ.400 typ. 600 6...15 kS 60 < 110 :S typ. 3 *10-4
1
) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden 6 01.11.2003
General Purpose Transistors Characteristics, Tj = 25/C
Min. Collector saturation voltage – Kollektor-Sättigungsspannung IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base saturation voltage – Basis-Sättigungsspannung IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-Emitter voltage – Basis-Emitter-Spannung VCE = 5 V, IC = 2 mA VCE = 5 V, IC = 10 mA Collector-Emitter cutoff current – Kollektorreststrom VCE = 80 V VCE = 50 V VCE = 30 V VCE = 30 V VCE = 80 V, Tj = 125/C VCE = 50 V, Tj = 125/C VCE = 30 V, Tj = 125/C VCE = 30 V, Tj = 125/C VCE = 5 V, IC = 10 mA, f = 100 MHz VCB = 10 V, f = 1 MHz Emitter-Base Capacitance – Emitter-Basis-Kapazität VEB = 0.5 V, f = 1 MHz Noise figure – Rauschmaß VCE = 5 V, IC = 200 :A RG = 2 kS f = 1 kHz, BC 547 BC 548 BC 549 F F F – – – RthA CEB0 – BC 546 BC 547 BC 548 BC 549 BC 546 BC 547 BC 548 BC 549 ICES ICES ICES ICES ICES ICES ICES ICES fT CCB0 – – – – – – – – – – VBE VBE 580 mV – VBEsat VBEsat – – VCEsat VCEsat – –
BC 546 ... BC 549 Kennwerte, Tj = 25/C
Typ. 80 mV 200 mV 700 mV 900 mV 660 mV – 0.2 nA 0.2 nA 0.2 nA 0.2 nA – – – – 300 MHz 3.5 pF 9 pF 2 dB 1.2 dB 1.2 dB Max. 200 mV 600 mV – – 700 mV 720 mV 15 nA 15 nA 15 nA 15 nA 4 :A 4 :A 4 :A 4 :A – 6 pF – 10 dB 4 dB 4 dB 250 K/W 1) BC 556 ... BC 559
Collector-Emitter cutoff current – Kollektorreststrom
Gain-Bandwidth Product – Transitfrequenz Collector-Base Capacitance – Kollektor-Basis-Kapazität
) f = 200 Hz
Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren
Available current gain groups per type Lieferbare Stromverstärkungsgruppen pro Typ
BC 546A BC 547A BC 548A
BC 546B BC 547B BC 548B BC 549B
BC 547C BC 548C BC 549C
1
) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden 01.11.2003
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