BC 327 / BC 328 PNP Si-Epitaxial PlanarTransistors
General Purpose Transistors PNP 625 mW TO-92 (10D3) 0.18 g
Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert
Standard Pinning 1=C 2=B 3=E
Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (TA = 25/C) Collector-Emitter-voltage Collector-Emitter-voltage Emitter-Base-voltage Power dissipation – Verlustleistung Collector current – Kollektorstrom (DC) Peak Coll. current – Kollektor-Spitzenstrom Base current – Basisstrom Junction temp. – Sperrschichttemperatur Storage temperature – Lagerungstemperatur B open B shorted C open - VCE0 - VCES - VEB0 Ptot - IC - ICM - IB Tj TS
Grenzwerte (TA = 25/C) BC 327 45 V 50 V 5V 625 mW 1) 800 mA 1A 100 mA 150/C - 65…+ 150/C BC 328 25 V 30 V
Characteristics, Tj = 25/C Min. DC current gain – Kollektor-Basis-Stromverhältnis Group -16 - VCE = 1 V, - IC = 100 mA Group -25 Group -40 Group -16 - VCE = 1 V, - IC = 300 mA Group -25 Group -40 hFE hFE hFE hFE hFE hFE 100 160 250 60 100 170
Kennwerte, Tj = 25/C Typ. 160 250 400 130 200 320 Max. 250 400 630 – – –
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) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden 2 01.11.2003
General Purpose Transistors Characteristics (Tj = 25/C) Min. Collector-Emitter cutoff current – Kollektorreststrom - VCE = 45 V - VCE = 25 V - VCE = 45 V, Tj = 125/C - VCE = 25 V, Tj = 125/C BC 327 BC 328 BC 327 BC 328 - ICES - ICES - ICES - ICES – – – –
BC 327 / BC 328 Kennwerte (Tj = 25/C) Typ. 2 nA 2 nA – – Max. 100 nA 100 nA 10 :A 10 :A
Collector-Emitter breakdown voltage Collector-Emitter Durchbruchspannung - IC = 10 mA - IC = 0.1 mA Emitter-Base breakdown voltage Emitter-Basis-Durchbruchspannung - IE = 0.1 mA - IC = 500 mA, - IB = 50 mA Base-Emitter voltage – Basis-Emitter-Spannung - VCE = 1 V, - IC = 300 mA Gain-Bandwidth Product – Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 50 MHz - VCB = 10 V, IE = ie = 0, f = 1 MHz fT CCB0 – – RthA 100 MHz 12 pF – – 200 K/W 1) BC 337 / BC 338 Collector-Base Capacitance – Kollektor-Basis-Kapazität Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren - VBE – – 1.2 V - V(BR)EB0 - VCEsat 5V – – – – 0.7 V Collector saturation volt. – Kollektor-Sättigungsspannung BC 327 BC 328 BC 327 BC 328 - V(BR)CES - V(BR)CES - V(BR)CES - V(BR)CES 20 V 45 V 30 V 50 V – – – – – – – –
Available current gain groups per type Lieferbare Stromverstärkungsgruppen pro Typ
BC 327-16 BC 328-16
BC 327-25 BC 328-25
BC327-40 BC328-40
1
) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden 01.11.2003
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