BC337, BC338
Small Signal Transistors (NPN)
TO-92
.181 (4.6) min. .492 (12.5) .181 (4.6) .142 (3.6)
FEATURES ♦ NPN Silicon Epitaxial Planar Transistors
for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages.
♦ These types are also available subdivided into three groups -16, -25, and -40, according to their DC current gain. As complementary types, the PNP transistors BC327 and BC328 are recommended.
max. ∅ .022 (0.55) .098 (2.5) C B E
♦ On special request, these transistors are also
manufactured in the pin configuration TO-18.
MECHANICAL DATA
Case: TO-92 Plastic Package Weight: approx. 0.18 g
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Base Current Power Dissipation at Tamb = 25 °C Junction Temperature Storage Temperature Range
1)
Value 50 30 45 25 5 800 1 100 6251) 150 –65 to +150
Unit V V V V V mA A mA mW °C °C
BC337 BC338 BC337 BC338
VCES VCES VCEO VCEO VEBO IC ICM IB Ptot Tj TS
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case
4/98
BC337, BC338
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol DC Current Gain at VCE = 1 V, IC = 100 mA
Min.
Typ.
Max.
Unit
Current Gain Group -16 -25 -40
at VCE = 1 V, IC = 300 mA
hFE hFE hFE hFE hFE hFE
100 160 250 60 100 170
160 250 400 130 200 320
250 400 630 – – –
– – – – – – nA nA µA µA
Current Gain Group -16 -25 -40
Collector-Emitter Cutoff Current at VCE = 45 V at VCE = 25 V at VCE = 45 V, Tamb = 125 °C at VCE = 25 V, Tamb = 125 °C Collector-Emitter Breakdown Voltage at IC = 10 mA Collector-Emitter Breakdown Voltage at IC = 0.1 mA Emitter-Base Breakdown Voltage at IE = 0.1 mA Collector Saturation Voltage at IC = 500 mA, IB = 50 mA Base-Emitter Voltage at VCE = 1 V, IC = 300 mA Gain-Bandwidth Product at VCE = 5 V, IC = 10 mA, f = 50 MHz Collector-Base Capacitance at VCB = 10 V, f = 1 MHz
BC337 BC338 BC337 BC338 BC338 BC337 BC338 BC337
ICES ICES ICES ICES V(BR)CEO V(BR)CEO V(BR)CES V(BR)CES V(BR)EBO VCEsat VBE fT CCBO RthJA
– – – – 20 45 30 50 5 – – – – –
2 2 – – – – – – – – – 100 12 –
100 100 10 10 – – – – – 0.7 1.2 – – 2001)
V V V V V V V MHz pF K/W
Thermal Resistance Junction to Ambient Air
1)
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case
RATINGS AND CHARACTERISTIC CURVES BC337, BC338
RATINGS AND CHARACTERISTIC CURVES BC337, BC338
RATINGS AND CHARACTERISTIC CURVES BC337, BC338
