NPN Silicon AF Transistors
BC 337 BC 338
q High current gain q High collector current q Low collector-emitter saturation voltage q Complementary types: BC 327, BC 328 (PNP) 2 1 3
Type BC 337 BC 337-16 BC 337-25 BC 337-40 BC 338 BC 338-16 BC 338-25 BC 338-40
Marking –
Ordering Code Q62702-C313 Q62702-C313-V3 Q62702-C313-V1 Q62702-C313-V2 Q62702-C314 Q62702-C314-V1 Q62702-C314-V2 Q62702-C314-V3
Pin Configuration 1 2 3 C B E
Package1) TO-92
1)
For detailed information see chapter Package Outlines.
Semiconductor Group
1
5.91
BC 337 BC 338
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TC = 66 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient Junction - case1) Rth JA Rth JC
≤ 200 ≤ 135
Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg
Values BC 337 45 50 5
BC 338 25 30 800 1 100 200 625 150
Unit V
mA A mA mW ˚C
– 65 … + 150
K/W
1)
Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
Semiconductor Group
2
BC 337 BC 338
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BC 337 BC 338 Collector-base breakdown voltage IC = 100 µA BC 337 BC 338 Emitter-base breakdown voltage IE = 10 µA Collector cutoff current VCB = 25 V VCB = 45 V VCB = 25 V, TA = 150 ˚C VCB = 45 V, TA = 150 ˚C Emitter cutoff current VEB = 4 V DC current gain1) IC = 100 mA; VCE = 1 V BC 337/16; BC 338/16 BC 337/25; BC 338/25 BC 337/40; BC 338/40 IC = 300 mA; VCE = 1 V BC 337/16; BC 338/16 BC 337/25; BC 338/25 BC 337/40; BC 338/40 Collector-emitter saturation voltage1) IC = 500 mA; IB = 50 mA Base-emitter saturation voltage IC = 500 mA; IB = 50 mA VCEsat VBEsat 60 100 170 – – – – – – – – – – 0.7 2 V BC 338 BC 337 BC 338 BC 337 IEB0 hFE 100 160 250 160 250 350 250 400 630 V(BR)EB0 ICB0 – – – – – – – – – – 100 100 10 10 100 nA nA µA µA nA – V(BR)CE0 45 25 V(BR)CB0 50 30 5 – – – – – – – – – – V Values typ. max. Unit
1)
Pulse test: t ≤ 300 µs, D ≤ 2 %.
Semiconductor Group
3
BC 337 BC 338
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. AC characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 20 MHz Output capacitance VCB = 10 V, f = 1 MHz Input capacitance VEB = 0.5 V, f = 1 MHz fT Cobo Cibo – – – 170 8 60 – – – MHz pF Values typ. max. Unit
Semiconductor Group
4
BC 337 BC 338
Total power dissipation Ptot = f (TA; TC)
Permissible pulse load RthJA = f (tp)
Collector current IC = f (VBE) VCE = 1 V
Collector cutoff current ICB0 = f (TA) VCB = 45 V
Semiconductor Group
5
BC 337 BC 338
DC current gain hFE = f (IC) VCE = 1 V
Transition frequency fT = f (IC) f = 20 MHz, TA = 25 ˚C
Collector-emitter saturation voltage VCEsat = f (IC) hFE = 10
Base-emitter saturation voltage VBEsat = f (IC) hFE = 10
Semiconductor Group
6
