BC 337 / BC 338 NPN Si-Epitaxial PlanarTransistors
General Purpose Transistors NPN 625 mW TO-92 (10D3) 0.18 g
Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert
Standard Pinning 1=C 2=B 3=E
Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (TA = 25/C) Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation – Verlustleistung Collector current – Kollektorstrom (DC) Junction temp. – Sperrschichttemperatur Storage temperature – Lagerungstemperatur B open E open C open VCE0 VCB0 VEB0 Ptot IC Tj TS
Grenzwerte (TA = 25/C) BC 337 45 V 50 V 5V 625 mW 1) 800 mA 150/C - 55…+ 150/C Kennwerte (Tj = 25/C) Min. Typ. 160 250 400 – – – – Max. 250 400 630 200 nA 200 nA 10 :A 10 :A BC 338 25 V 30 V
Characteristics (Tj = 25/C) DC current gain – Kollektor-Basis-Stromverhältnis Group -16 VCE = 1 V, IC = 100 mA Group -25 Group -40 VCE = 40 V VCE = 20 V VCE = 40 V, Tj = 125/C VCE = 20 V, Tj = 125/C BC 337 BC 338 BC 337 BC 338 hFE hFE hFE ICES ICES ICES ICES 100 160 250 – – – –
Collector-Emitter cutoff current – Kollektorreststrom
1
) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden 4 01.11.2003
General Purpose Transistors Characteristics (Tj = 25/C) Min. Collector-Emitter breakdown voltage Collector-Emitter Durchbruchspannung IC = 10 mA IC = 0.1 mA Emitter-Base breakdown voltage Emitter-Basis-Durchbruchspannung IE = 10 :A IC = 500 mA, IB = 50 mA Base-Emitter voltage – Basis-Emitter-Spannung VCE = 1 V, IC = 300 mA Gain-Bandwidth Product – Transitfrequenz VCE = 5 V, IC = 10 mA, f = 50 MHz Collector-Base Cap. – Kollektor-Basis-Kap. VCB = 10 V, f = 1 MHz CCB0 – RthA fT – VBE – V(BR)EB0 VCEsat 5V – BC 337 BC 338 BC 337 BC 338 V(BR)CES V(BR)CES V(BR)CES V(BR)CES 40 V 20 V 50 V 30 V
BC 337 / BC 338 Kennwerte (Tj = 25/C) Typ. Max.
– – – –
– – – –
– – – 100 MHz 12 pF
– 0.7 V 1.2 V – – 200 K/W 1)
Collector saturation volt. – Kollektor-Sättigungsspannung
Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren
BC 327 / BC 328
Available current gain groups per type Lieferbare Stromverstärkungsgruppen pro Typ
BC 337-16 BC 338-16
BC 337-25 BC 338-25
BC337-40 BC338-40
1
) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden 01.11.2003
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