Si PNP Transistor

YOUDA TRANSISTOR Si PNP TRANSISTOR¡ª DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= -40V *Collector current up to -3A *High hFE linearity B772 B772 PIN CONFIGURATIONS PIN 1 2 3 SYMBOL Emitter Collector Base ABSOLUTE MAXIMUM RATINGS (Tamb=25¡æ ) PARAMETER SYMBOL Collector-Base Voltage BVCBO Collector-Emitter Voltage BVCEO Emitter-Base Voltage BVEBO Tcase=25¡æ Collector Dissipation PCM Tamb=25¡æ DC ICM Collector Current Pulse Icp Base Current IB Junction Temperature Tj Storage Temperature Tstg VALUE -40 -30 -5 10 1 -3 -7 -0.6 +150 -55¡« +150 UNIT V V V W W A A A ¡æ ¡æ ELECTRICAL CHARACTERISTICS (Tamb=25¡æ ,all voltage referenced to GND Unless otherwise specified) PARAMETER Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance SYMBOL ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob www.DataSheet4U.com TEST CONDITIONS VcB=-30V, IE=0 VEB=-3V, IC=0 VcE=-2V, IC=20mA VcE=-2V, IC=-1A Ic=-2A, IB=-0.2A Ic=-2A, IB=-0.2A VcE=-5V, IC=-0.1A VcB=-10V, IE=0,f=1MHz MIN TYP MAX -100 -100 UNIT nA nA 30 100 200 -0.3 -1.0 80 45 400 -0.5 -2.0 V V MHz pF CLASSIFICATION OF hFE RANK RANGE Q 100¡« 200 160¡« P 320 200¡« E 400 WuXi YouDa Electronics Co., Ltd Add: No.5 Xijin Road, National Hi-Tech Industrial Development Zone, Wuxi Jiangsu China Tel: 86-510-5205117 86-510-5205108 Fax: 86-510-5205110 Website: www.e-youda.com SHENZHEN OFFICE Tel£º 86-755-83740369 13823533350 Fax£º 86-755-83741418 Ver 3.1 1 of 1 2004-9-20