Power Transistors
2SB1548, 2SB1548A
Silicon PNP epitaxial planar type
For power amplification Complementary to 2SD2374 and 2SD2374A
s Features
q q q
Unit: mm
15.0±0.5
s Absolute Maximum Ratings
Parameter Collector to www.DataSheet4U.com base voltage Collector to 2SB1548 2SB1548A 2SB1548 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(TC=25˚C)
Ratings –60 –80 –60 –80 –5 –5 –3 25 2 150 –55 to +150 Unit V
φ3.2±0.1
13.7±0.2 4.2±0.2
1.4±0.2 1.6±0.2 0.8±0.1
3.0±0.5
High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw
9.9±0.3
4.6±0.2 2.9±0.2
2.6±0.1
emitter voltage 2SB1548A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V V
0.55±0.15
1
2
A A W ˚C ˚C
2.54±0.3 3 5.08±0.5
1:Base 2:Collector 3:Emitter TO–220D Full Pack Package
s Electrical Characteristics
Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB1548 2SB1548A 2SB1548 2SB1548A 2SB1548 2SB1548A
(TC=25˚C)
Symbol ICES ICEO IEBO VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf IC = –1A, IB1 = – 0.1A, IB2 = 0.1A Conditions VCE = –60V, VBE = 0 VCE = –80V, VBE = 0 VCE = –30V, IB = 0 VCE = –60V, IB = 0 VEB = –5V, IC = 0 IC = –30mA, IB = 0 VCE = –4V, IC = –1A VCE = –4V, IC = –3A VCE = –4V, IC = –3A IC = –3A, IB = – 0.375A VCE = –10V, IC = – 0.5A, f = 10MHz 30 0.5 1.2 0.3 –60 –80 70 10 –1.8 –1.2 V V MHz µs µs µs 250 V min typ max –200 –200 –300 –300 –1 Unit µA µA mA
Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
*h FE1
Rank classification
Q 70 to 150 P 120 to 250
Rank hFE1
Note: Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the rank classification.
1
Power Transistors
PC — Ta
40 –6 (1) TC=Ta (2) Without heat sink (PC=2W) TC=25˚C
2SB1548, 2SB1548A
IC — VCE
–8 –7 –5 VCE=–4V TC=25˚C
IC — VBE
Collector power dissipation PC (W)
36 32 28 (1) 24 20 16 12 8 4 0 0 20 (2)
Collector current IC (A)
Collector current IC (A)
–6 –5 –4 –3 –2 –1 0
–4
IB=–100mA –80mA
–3
–60mA –40mA –30mA
–2
–20mA –16mA –12mA –8mA –4mA
–1
0 40 60 80 100 120 140 160 0 –2 –4 –6 –8 –10 –12
0
– 0.2 – 0.4 – 0.6 – 0.8 –1.0
–1.2
www.DataSheet4U.com Ambient temperature Ta (˚C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
VCE(sat) — IC
Collector to emitter saturation voltage VCE(sat) (V)
–10 –3 –1 IC/IB=10 TC=25˚C 10000
hFE — IC
1000 VCE=–4V TC=25˚C 300 100 30 10 3 1 0.3
fT — IC
VCE=–10V f=10MHz TC=25˚C
Forward current transfer ratio hFE
1000 300 100 30 10 3 1 – 0.01 – 0.03 – 0.1 – 0.3
– 0.3 – 0.1 – 0.03 – 0.01
– 0.003 – 0.001 – 0.01 – 0.03 – 0.1 – 0.3
Transition frequency fT (MHz)
–1 –3 –10
3000
–1
–3
–10
0.1 – 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Area of safe operation (ASO)
–100 –30 103 Non repetitive pulse TC=25˚C
Rth(t) — t
(1) Without heat sink (2) With a 100 × 80 × t2mm Al heat sink (1) (2) 10
Thermal resistance Rth(t) (˚C/W)
Collector current IC (A)
102
–10 –3 –1
ICP IC DC t=1ms 10ms
– 0.3 – 0.1 – 0.03 – 0.01 –1
1
10–1
–3
–10
–30
–100 –300 –1000
10–2 10–4
10–3
10–2
10–1
1
10
102
103
104
Collector to emitter voltage VCE
(V)
Time t (s)
2
