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Part Number |
AS5C512K8 |
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Manufacturer |
Austin Semiconductor |
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Semiconductor DataSheet |
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DataSheet View |
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SRAM
Austin Semiconductor, Inc. 512K x 8 SRAM
HIGH SPEED SRAM with REVOLUTIONARY PINOUT
AVAILABLE AS MILITARY SPECIFICATIONS
•SMD 5962-95600 •SMD 5962-95613 •MIL-STD-883
AS5C512K8
PIN ASSIGNMENT (Top View)
36-Pin SOJ (DJ & ECJ) 36-Pin CLCC (EC)
FEATURES
• Ultra High Speed Asynchronous Operation • Fully Static, No Clocks • Multiple center power and ground pins for improved noise immunity • Easy memory expansion with CE and OE options • All inputs and outputs are TTL-compatible • Single +5V Power Supply +/- 10% • Data Retention Functionality Testing (Contact Factory) • Cost Efficient Plastic Packaging • Extended Testing Over -55ºC to +125ºC for plastics • Plastic 36 pin PSOJ is fully compatible with the www.DataSheet4U.com Ceramic 36 pin SOJ • 3.3V Future Offering
36-Pin Flat Pack (F)
OPTIONS
• Timing 15ns access 17ns access 20ns access 25ns access 35ns access 45ns access • Operating Temperature Ranges Military (-55oC to +125oC) Industrial (-40oC to +85oC) • Package(s) Ceramic LCC Ceramic Flatpack Plastic SOJ Ceramic SOJ • 2V data retention/low power • Radiation Tolerant (EPI)
MARKING
-15 -17 -20 -25 -35 -45
GENERAL DESCRIPTION
XT IT The AS5C512K8 is a high speed SRAM. It offers flexibility in high-speed memory applications, with chip enable (CE) and output enable (OE) capabilities. These features can place the outputs in High-Z for additional flexibility in system design. Writing to these devices is accomplished when write enable (WE) and CE inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE go LOW. As a option, the device can be supplied offering a reduced power standby mode, allowing system designers to meet low standby power requirements. This device operates from a single +5V power supply and all inputs and outputs are fully TTL-compatible. The AS5C512K8DJ offers the convenience and reliability of the AS5C512K8 SRAM and has the cost advantage of a durable plastic. The AS5C512K8DJ is footprint compatible with 36 pin CSOJ package of the SMD 5692-95600.
EC F DJ ECJ
No. 210 No. 307 No. 903 No.503
L (Consult Factory) E
For more products and information please visit our web site at www.austinsemiconductor.com
AS5C512K8 Rev. 4.5 7/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1
SRAM
Austin Semiconductor, Inc.
FUNCTIONAL BLOCK DIAGRAM
VCC GND
AS5C512K8
DQ8
INPUT BUFFER ROW DECODER I/O CONTROLS
4,194,304-BIT MEMORY ARRAY 1024 ROWS X 4096 COLUMNS
A0-A18
DQ1
CE
COLUMN DECODER
OE WE *POWER DOWN
*On the low voltage Data Retention option.
PIN FUNCTIONS
A0 - A18 Address Inputs Write Enable Chip Enable Output Enable Data Inputs/Outputs Power Ground No Connection
TRUTH TABLE
MODE OE CE WE STANDBY X H X READ L L H NOT SELECTED H L H WRITE X L L
X = Don’t Care
WE
I/O HIGH-Z Q HIGH-Z D
POWER STANDBY ACTIVE ACTIVE ACTIVE
CE OE I/O0 - I/O7 VCC VSS NC
AS5C512K8 Rev. 4.5 7/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2
SRAM
Austin Semiconductor, Inc.
ABSOLUTE MAXIMUM RATINGS*
Voltage on Vcc Supply Relative to Vss Vcc ..............................................................................-.5V to +7.0V Storage Temperature (Plastic)......................-65°C to +150°C Storage Temperature (Ceramic)...................-55°C to +125°C Short Circuit Output Current (per I/O)…........................20mA Voltage on any Pin Relative to Vss.................-.5V to Vcc+1V Maximum Junction Temperature**..............................+150°C Power Dissipation ................................................................1W
AS5C512K8
*Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. ** Junction temperature depends upon package type, cycle time, loading, ambient temperature and airflow, and humidity.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS (-55oC < TA < +125oC & -40oC < TA < +85oC ; Vcc = 5V +10%)
DESCRIPTION Power Supply Current: Operating CONDITIONS WE=CE VIH, All other inputs < VIL, Vcc = MAX, f = 0, Outputs Open Power Supply Current: Standby ICCSP ICCLP ISBTSP 225 180 60 30 25 225 180 60 30 25 225 180 60 30 25 225 180 60 30 25 225 180 60 30 25 225 180 60 30 25 mA mA mA mA mA 3 SYM -15 -17 -20 MAX -25 -35 -45 UNITS NOTES
"L" Version Only ISBTLP CE > Vcc -0.2V; Vcc = MAX VINVcc -0.2V; f = 0 "L" Version Only ISBCLP ISBCSP
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PARAMETER Input Capacitance Output Capactiance CONDITIONS TA = 25 C, f = 1MHz VIN = 0
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SYMBOL CI Co
MAX 12 14
UNITS pF pF
NOTES 4 4
AS5C512K8 Rev. 4.5 7/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
3
SRAM
Austin Semiconductor, Inc.
AS5C512K8
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (-55oC < TA < +125oC or -40oC to +85oC; Vcc = 5V +10%)
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AS5C512K8 Rev. 4.5 7/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
4
SRAM
Austin Semiconductor, Inc.
AC TEST CONDITIONS
Input pulse levels ...................................................... Vss to 3.0V Input rise and fall times ......................................................... 3ns Input timing reference levels ............................................... 1.5V Output reference levels ........................................................ 1.5V Output load ................................................. See Figures 1 and 2
AS5C512K8
Q
167 ohms 1.73V C=30pF
Q
167 ohms 1.73V C=5pF
Fig. 1 Output Load Equivalent
Fig. 2 Output Load Equivalent
NOTES
1. 2. 3. 4. 5. 6. All voltages referenced to VSS (GND). -2V for pulse width < 20ns ICC is dependent on output loading and cycle rates. This parameter is guaranteed but not tested. Test conditions as specified with the output loading as shown in Fig. 1 unless otherwise noted. t LZCE, tLZWE, tLZOE, t HZCE, tHZOE and tHZWE are specified with CL = 5pF as in Fig. 2. Transition is measured ±200mV from steady state voltage. At any given temperature and voltage condition, t HZCE is less than tLZCE, and tHZWE is less than t LZWE. WE is HIGH for READ cycle. 9. 10. 11. 12. 13. 14. 15. Device is continuously selected. Chip enables and output enables are held in their active state. Address valid prior to, or coincident with, latest occurring chip enable. t RC = Read Cycle Time. Chip enable and write enable can initiate and terminate a WRITE cycle. Output enable (OE) is inactive (HIGH). Output enable (OE) is active (LOW). ASI does not warrant functionality nor reliability of any product in which the junction temperature exceeds 150°C. Care should be taken to limit power to acceptable levels.
7.
8.
DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only)
DESCRIPTION Vcc for Retention Data Data Retention Current Chip Deselect to Data Operation Recovery Time CONDITIONS CE > VCC -0.2V VIN > VCC -0.2 or 0.2V Vcc = 2.0V SYM VDR ICCDR tCDR tR 0 10 MIN 2 4.5 MAX UNITS V mA ns ms 4 4, 11 NOTES
AS5C512K8 Rev. 4.5 7/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
5
654321 654321 654321 654321 653321 4 4 21 4321 321 4321 4321 4
765414354 176 376 5 765452121321 376 765454321321 12154 54351321 34354 765412121321 12154 376 4 76 765452121321 3435 765412121321 34324 576
7654320 765 65 1 76543219876543214321 211 7214321 76542219876543214321 20 310987654365 7 76543219876543214321 765 10 76542119876543214321 210 320 765 76543219876543214321 765
VIH-
765410 5654309 743232987654321 543212187654321 5432 76543 9 5654101 3 7654309 543212187654321 7654309 543212187654321 54321 743212187654321 543212187654321 5432109 743212187654321 543212187654321 7654309 5654309 54321
tR
543210987654321 432 543210987654321 654321 1 543210987654321 54321 543210987654321 543210987654321 6 4321 432 654321 543210987654321 654321 1 543210987654321 543210987654321 4321
t CDR
AS5C512K8 Rev. 4.5 7/01 |
