MOSFET Power Module

APTM50DUM25T Dual common source MOSFET Power Module VDSS = 500V RDSon = 25mΩ max @ Tj = 25°C Ω ID = 149A @ Tc = 25°C Application • • • AC Switches Switched Mode Power Supplies Uninterruptible Power Supplies Features • Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Kelvin Drain for VDS monitoring Very low stray inductance - Symmetrical design - M5 power connectors Internal thermistor for temperature monitoring High level of integration • • • www.DataSheet4U.com 1 D1 S D2 DK1 NC G1 SK1 NC SK2 G2 NC DK2 NC NTC1 NTC2 • • Benefits • • • • Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals for signal and M5 for power for easy PCB mounting Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Tc = 25°C Tc = 80°C mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-3 APTM50DUM25T – Rev 0 Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 500 149 111 300 ±30 25 1250 149 30 1300 Unit V A V mΩ W A June, 2003 APTM50DUM25T Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V, ID = 500µA VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V All ratings @ Tj = 25°C unless otherwise specified Min 500 Typ Max Unit V µA mΩ V nA Tj = 25°C Tj = 125°C 2 300 2000 25 4 ±250 VGS = 10V, ID = 74.5A VGS = VDS, ID = 8mA VGS = ±30 V, VDS = 0V Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 149A Resistive Switching VGS = 15V VBus = 250V ID = 149A RG = 0.22 Ω Min Typ 29.6 4 1.6 1200 200 560 12 10 50 8 Max Unit nF nC ns Source - Drain diode ratings and characteristics Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage trr Qrr Reverse Recovery Time Reverse Recovery Charge Test Conditions Tc = 25°C Tc = 80°C Min Typ VGS = 0V, IS = -149A IS = -149A, VR = 250V diS/dt = 800A/µs IS = -149A, VR = 250V diS/dt = 800A/µs Max 149 111 1.3 Unit A V ns µC 510 80 Thermal and package characteristics Torque Wt Mounting torque Package Weight g APT website – http://www.advancedpower.com 2-3 APTM50DUM25T – Rev 0 To heatsink For terminals M5 M5 N.m June, 2003 Symbol Characteristic RthJC Junction to Case RMS Isolation Voltage, any terminal to case VISOL t =1 min, I isol<1mA, 50/60Hz TJ Operating junction temperature range TSTG Storage Temperature Range TC Operating Case Temperature Min 2500 -40 -40 -40 2 2 Typ Max 0.1 150 125 100 3.5 3.5 550 Unit °C/W V °C APTM50DUM25T Temperature sensor NTC Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.16 K Min Typ 68 4080 Max Unit kΩ K RT = R 25 exp B 25 / 85 1 1 − T25 T T: Thermistor temperature RT: Thermistor value at T Package outline Ra 3,2 APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 3-3 APTM50DUM25T – Rev 0 APT reserves the right to change, without notice, the specifications and information contained herein June, 2003