MOSFET Power Module

APTM50AM35FT Phase leg MOSFET Power Module VBUS Q1 NTC2 VDSS = 500V RDSon = 35mW max @ Tj = 25°C ID = 99A @ Tc = 25°C Application · Welding converters · Switched Mode Power Supplies · Uninterruptible Power Supplies Features · Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged · Kelvin source for easy drive · Very low stray inductance - Symmetrical design - Lead frames for power connections · Internal thermistor for temperature monitoring · High level of integration Benefits · Outstanding performance at high frequency operation · Direct mounting to heatsink (isolated package) · Low junction to case thermal resistance · Solderable terminals both for power and signal for easy PCB mounting · Low profile G1 S1 OUT Q2 G2 S2 0/VBUS NTC1 www.DataSheet4U.com G2 S2 OUT VBUS 0/VBUS OUT S1 G1 S2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 500 99 74 396 ±30 35 781 51 50 3000 Unit V A V mW W A mJ Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM50AM35FT – Rev 1 May, 2004 APTM50AM35FT All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V, ID = 375µA VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V Min 500 Tj = 25°C Tj = 125°C 3 Typ Max 375 1500 35 5 ±150 Unit V µA mW V nA VGS = 10V, ID = 49.5A VGS = VDS, ID = 5mA VGS = ±30 V, VDS = 0V Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy u Turn-off Switching Energy v Turn-on Switching Energy u Turn-off Switching Energy v Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 99A Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 99A RG = 1W Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 99A, RG = 1Ω Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 99A, RG = 1Ω Min Typ 14 2.8 0.2 280 80 140 21 38 75 93 2070 1690 3112 2026 µJ µJ ns Max Unit nF nC Source - Drain diode ratings and characteristics Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery w trr Qrr Reverse Recovery Time Reverse Recovery Charge Test Conditions Tc = 25°C Tc = 80°C VGS = 0V, IS = - 99A IS = - 99A VR = 250V diS/dt = 200A/µs IS = - 99A VR = 250V diS/dt = 200A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 5.2 19.2 Min Typ Max 99 74 1.3 15 270 540 Unit A V V/ns ns µC APT website – http://www.advancedpower.com 2–6 APTM50AM35FT – Rev 1 u Eon includes diode reverse recovery. v In accordance with JEDEC standard JESD24-1. w dv/dt numbers reflect the limitations of the circuit rather than the device itself. VR £ VDSS Tj £ 150°C IS £ - 99A di/dt £ 700A/µs May, 2004 APTM50AM35FT Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Min 2500 -40 -40 -40 Typ Max 0.16 150 125 100 4.7 160 Unit °C/W V °C N.m g Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink M5 Temperature sensor NTC Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.16 K RT = é æ1 1 öù T: Thermistor temperature exp ê B25 / 85 ç ç T - T ÷ú RT: Thermistor value at T ÷ è 25 øû ë R 25 Min Typ 68 4080 Max Unit kW K Package outline APT website – http://www.advancedpower.com 3–6 APTM50AM35FT – Rev 1 May, 2004 APTM50AM35FT Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.18 Thermal Impedance (°C/W) 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0.9 0 0.00001 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 400 ID, Drain Current (A) VGS=10&15V ID, Drain Current (A) 8V 300 250 200 150 100 50 0 25 0 2 4 6 8 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 120 ID, DC Drain Current (A) Normalized to VGS=10V @ 49.5A Transfert Characteristics VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 300 7V 200 6.5V 6V 5.5V 0 0 5V TJ=25°C 100 TJ=125°C TJ=-55°C 5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current RDS(on) Drain to Source ON Resistance 1.1 1.05 100 80 60 40 20 0 VGS=10V 1 VGS=20V 0.95 0.9 0 20 40 60 80 100 ID, Drain Current (A) 120 25 50 75 100 125 TC, Case Temperature (°C) 150 May, 2004 APT website – http://www.advancedpower.com 4–6 APTM50AM35FT – Rev 1 APTM50AM35FT RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) Ciss 10000 Coss 1000 ID, Drain Current (A) ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area VGS=10V ID=49.5A limited by RDSon 100 us 100 1 ms 10 Single pulse TJ=150°C 1 1 10 ms 100 ms 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 14 12 10 8 6 4 2 0 0 50 100 150 200 250 300 350 Gate Charge (nC) May, 2004 VDS=400V ID=99A TJ=25°C VDS=100V VDS=250V 1000 Crss 100 10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50 APT website – http://www.advancedpower.com 5–6 APTM50AM35FT – Rev 1 APTM50AM35FT Delay Times vs Current 80 70 td(on) and td(off) (ns) 60 50 40 30 20 10 0 20 40 60 80 100 120 140 160 ID, Drain Current (A) Switching Energy vs Current 6 Switching Energy (mJ) 5 4 3 2 1 0 0 20 40 60 80 100 120 140 160 ID, Drain Current (A) Switching Energy (mJ) VDS=333V RG=1Ω TJ=125°C L=100µH VDS=333V RG=1Ω TJ=125°C L=100µH Rise and Fall times vs Current 160 140 120 tr and tf (ns) 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 ID, Drain Current (A) VDS=333V RG=1Ω TJ=125°C L=100µH td(off) tf tr td(on) Switching Energy vs Gate Resistance 10 VDS=333V ID=99A TJ=125°C L=100µH Eon 8 6 4 2 0 0 Eoff Eon Eoff 5 10 15 20 25 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 Operating Frequency vs Drain Current 400 Frequency (kHz) 350 300 250 200 150 100 50 0 10 20 30 40 50 60 70 ID, Drain Current (A) 80 90 VDS=333V D=50% RG=1Ω TJ=125°C IDR, Reverse Drain Current (A) 450 100 TJ=150°C TJ=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) May, 2004 APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6–6 APTM50AM35FT – Rev 1 APT reserves the right to change, without notice, the specifications and information contained herein