MOSFET Power Module

APTM20UM09S Single switch Series & parallel diodes MOSFET Power Module SK CR1 D VDSS = 200V RDSon = 9mΩ max @ Tj = 25°C ID = 195A @ Tc = 25°C Application · · · Motor control Switched Mode Power Supplies Uninterruptible Power Supplies S Q1 Features G · · · www.DataSheet4U.com · Benefits · · · Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Low stray inductance - M6 power connectors - M4 signal connectors High level of integration Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 200 195 145 780 ±30 9 780 65 30 1300 Unit V A V mW W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–7 APTM20UM09S – Rev 1 May, 2004 Tc = 25°C APTM20UM09S All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V, ID = 1mA VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V Tj = 25°C Tj = 125°C Min 200 Typ Max 400 2000 9 5 ±400 Unit V µA mW V nA VGS = 10V, ID = 74.5A VGS = VDS, ID = 4mA VGS = ±30 V, VDS = 0V 3 Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy u Turn-off Switching Energy v Turn-on Switching Energy u Turn-off Switching Energy v Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 100V ID = 195A Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 195A RG = 1.2W Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 195A, RG = 1.2Ω Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 195A, RG = 1.2Ω Min Typ 12.3 4 0.39 217 143 157 28 56 81 99 1029 1011 1351 1180 µJ µJ ns Max Unit nF nC Series diode ratings and characteristics Symbol Characteristic Maximum Average Forward Current IF(AV) VF Diode Forward Voltage Test Conditions 50% duty cycle IF = 120A IF = 240A IF = 120A IF = 120A VR = 133V di/dt = 400A/µs IF = 120A VR = 133V di/dt = 400A/µs Min Tc = 85°C Typ 120 1.1 1.4 0.9 31 60 120 500 Max 1.15 V Unit A Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C trr Qrr Reverse Recovery Time Reverse Recovery Charge ns nC APTM20UM09S – Rev 1 May, 2004 u Eon includes diode reverse recovery. v In accordance with JEDEC standard JESD24-1. APT website – http://www.advancedpower.com 2–7 APTM20UM09S Parallel diode ratings and characteristics Symbol Characteristic Maximum Average Forward Current IF(AV) VF Diode Forward Voltage Test Conditions 50% duty cycle IF = 100A IF = 200A IF = 100A IF = 100A VR = 133V di/dt = 200A/µs IF = 100A VR = 133V di/dt = 200A/µs Min Tc = 90°C Typ 100 1 1.4 0.9 60 110 200 840 Max 1.1 V Unit A Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C trr Qrr Reverse Recovery Time Reverse Recovery Charge ns nC Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Transistor Series diode Parallel diode 2500 -40 -40 -40 3 Min Typ Max 0.16 0.46 0.6 150 125 100 1.2 5 400 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight M4 M6 APT website – http://www.advancedpower.com 3–7 APTM20UM09S – Rev 1 May, 2004 APTM20UM09S Package outline Mounting holes: 4xÆ6.5 mm APT website – http://www.advancedpower.com 4–7 APTM20UM09S – Rev 1 May, 2004 APTM20UM09S Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.18 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 0.00001 0.1 0.05 0.0001 0.001 0.01 0.7 0.5 0.3 Single Pulse 0.9 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 600 ID, Drain Current (A) ID, Drain Current (A) 500 VGS=15 & 10V 600 500 400 300 200 100 0 Transfert Characteristics VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 400 300 200 100 0 0 2.5 5 7.5 10 8V 7V 6V T J=125°C TJ=25°C TJ=-55°C 12.5 15 2 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.2 1.15 1.1 1.05 1 0.95 0.9 0 100 200 300 ID, Drain Current (A) 400 VGS=20V VGS=10V 3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V) RDS(on) Drain to Source ON Resistance DC Drain Current vs Case Temperature 200 ID, DC Drain Current (A) Normalized to VGS=10V @ 74.5A 160 120 80 40 0 25 50 75 100 125 TC, Case Temperature (°C) 150 APT website – http://www.advancedpower.com 5–7 APTM20UM09S – Rev 1 May, 2004 APTM20UM09S RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) Ciss 10000 Coss 1000 1 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area limited by RDSon ON resistance vs Temperature VGS=10V ID= 195A 1000 ID, Drain Current (A) 100µs 100 1ms 10ms 10 Single pulse TJ=150°C DC line 1 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 12 VDS=40V ID=195A 10 TJ=25°C V =100V DS VGS, Gate to Source Voltage (V) 8 6 4 2 0 0 60 120 VDS=160V Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 180 240 Gate Charge (nC) APT website – http://www.advancedpower.com 6–7 APTM20UM09S – Rev 1 May, 2004 APTM20UM09S Delay Times vs Current 90 80 td(on) and td(off) (ns) 70 60 50 40 30 20 10 50 100 150 200 250 300 350 ID, Drain Current (A) Switching Energy vs Current VDS=133V RG=1.2Ω TJ=125°C L=100µH Rise and Fall times vs Current 160 140 VDS=133V RG=1.2Ω TJ=125°C L=100µH td(off) tr and tf (ns) 120 100 80 60 40 20 0 50 tf tr td(on) 100 150 200 250 300 350 ID, Drain Current (A) Switching Energy vs Gate Resistance 3500 Switching Energy (µJ) 3000 2500 2000 Eon 1500 1000 VDS=133V ID=195A TJ=125°C L=100µH 3000 2500 Eon and Eoff (µJ) VDS=133V RG=1.2Ω TJ=125°C L=100µH Eon 2000 1500 1000 500 0 Eoff Eoff 50 100 150 200 250 300 350 0 2 4 6 8 10 12 14 ID, Drain Current (A) Operating Frequency vs Drain Current 350 Frequency (kHz) 300 250 200 150 100 50 0 20 40 60 80 100 120 140 160 180 ID, Drain Current (A) VDS=133V D=50% RG=1.2Ω TJ=125°C Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 10000 IDR, Reverse Drain Current (A) 400 1000 TJ=150°C 100 TJ=25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 VSD, Source to Drain Voltage (V) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 7–7 APTM20UM09S – Rev 1 May, 2004