MOSFET Power Module

APTM20SKM08T Buck chopper MOSFET Power Module VBUS Q1 NTC2 VDSS = 200V RDSon = 8mW max @ Tj = 25°C ID = 208A @ Tc = 25°C Application · · AC and DC motor control Switched Mode Power Supplies G1 Features · Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration S1 OUT 0/VBU S SENSE · · 0/VBU S NT C1 www.DataSheet4U.com · · 0/VBUS SENSE Benefits OUT VBUS 0/VBUS OUT · · · · · S1 G1 0/VBUS SENSE NTC2 NTC1 Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc= 25°C Tc = 80°C Max ratings 200 208 155 832 ±30 8 781 100 50 3000 Unit V A V mW W A mJ May, 2004 1–6 APTM20SKM08T – Rev 2 Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com APTM20SKM08T All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V, ID = 375µA VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V Min 200 Tj = 25°C Tj = 125°C Typ Max 150 750 8 5 ±150 Unit V µA mW V nA VGS = 10V, ID = 104A VGS = VDS, ID = 5mA VGS = ±30 V, VDS = 0V 3 Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy u Turn-off Switching Energy v Turn-on Switching Energy u Turn-off Switching Energy v Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 100V ID = 208A Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 208A RG = 2.5W Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 208A, RG = 2.5Ω Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 208A, RG = 2.5Ω Min Typ 14.4 4.66 0.29 280 106 134 32 64 88 116 1698 1858 1872 1972 µJ µJ ns nC Max Unit nF Diode ratings and characteristics Symbol Characteristic Maximum Average Forward Current IF(AV) VF Diode Forward Voltage Test Conditions 50% duty cycle IF = 180A IF = 360A IF = 180A IF = 180A VR = 133V di/dt = 600A/µs IF = 180A VR = 133V di/dt = 600A/µs Min Tc = 85°C Typ 180 1.1 1.4 0.9 31 60 180 750 Max Unit A V Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Qrr Reverse Recovery Charge nC u Eon includes diode reverse recovery. v In accordance with JEDEC standard JESD24-1. APT website – http://www.advancedpower.com 2–6 APTM20SKM08T – Rev 2 May, 2004 trr Reverse Recovery Time ns APTM20SKM08T Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Transistor Diode 2500 -40 -40 -40 Min Typ Max 0.16 0.32 150 125 100 4.7 160 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz To Heatsink M5 Temperature sensor NTC Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.16 K RT = é æ1 1 öù T: Thermistor temperature exp ê B25 / 85 ç ç T - T ÷ú RT: Thermistor value at T ÷ è 25 øû ë R 25 Min Typ 68 4080 Max Unit kW K Package outline APT website – http://www.advancedpower.com 3–6 APTM20SKM08T – Rev 2 May, 2004 APTM20SKM08T Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.18 Thermal Impedance (°C/W) 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 0.01 0.1 1 10 Single Pulse 0.9 0 0.00001 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics VGS=15V 700 600 ID, Drain Current (A) 500 400 300 200 100 0 Transfert Characteristics 600 ID, Drain Current (A) 500 400 300 200 100 0 TJ=25°C TJ=125°C TJ=-55°C VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 10V 9V 8.5V 8V 7.5V 7V 6.5V 0 4 8 12 16 20 24 28 0 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.2 ID, DC Drain Current (A) Normalized to VGS=10V @ 104A 1 2 3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V) RDS(on) Drain to Source ON Resistance DC Drain Current vs Case Temperature 250 200 150 100 50 0 1.1 1 VGS=10V VGS=20V 0.9 0.8 0 50 100 150 200 250 300 ID, Drain Current (A) 25 50 75 100 125 150 May, 2004 4–6 APTM20SKM08T – Rev 2 TC, Case Temperature (°C) APT website – http://www.advancedpower.com APTM20SKM08T RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) Ciss 10000 Coss ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area limited by RDSon VGS=10V ID= 104A 1000 100µs 100 1ms 10 Single pulse TJ=150°C 1 1 10 100 1000 VDS, Drain to Source Voltage (V) 10ms 100ms VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 ID=208A VDS=40V 12 TJ=25°C 10 8 6 4 2 0 0 40 80 120 160 200 240 280 320 Gate Charge (nC) May, 2004 VDS=100V VDS=160V 1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) APT website – http://www.advancedpower.com 5–6 APTM20SKM08T – Rev 2 APTM20SKM08T Delay Times vs Current 120 100 td(on) and td(off) (ns) 80 60 40 20 0 0 50 100 150 200 250 300 350 ID, Drain Current (A) VDS=133V RG=2.5Ω TJ=125°C L=100µH Rise and Fall times vs Current 160 140 VDS=133V RG=2.5Ω TJ=125°C L=100µH td(off) tr and tf (ns) 120 100 80 60 40 20 0 0 tf td(on) tr 50 100 150 200 250 300 350 ID, Drain Current (A) Switching Energy vs Current 4 Switching Energy (mJ) 3 2 1 0 0 50 100 150 200 250 300 350 ID, Drain Current (A) Operating Frequency vs Drain Current VDS=133V D=50% RG=2.5Ω TJ=125°C VDS=133V RG=2.5Ω TJ=125°C L=100µH Switching Energy vs Gate Resistance 6 VDS=133V ID=208A TJ=125°C L=100µH Eoff 5 4 3 2 1 0 Eon and Eoff (mJ) Eoff Eon Eon 5 10 15 20 25 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 1000 TJ=150°C 100 TJ=25°C 10 300 250 Frequency (kHz) 200 150 100 50 0 25 50 75 100 125 150 175 200 ID, Drain Current (A) 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 May, 2004 VSD, Source to Drain Voltage (V) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6–6 APTM20SKM08T – Rev 2