MOSFET Power Module

APTM20HM20FT Full - Bridge MOSFET Power Module VBUS Q1 Q3 VDSS = 200V RDSon = 20mW max @ Tj = 25°C ID = 89A @ Tc = 25°C Application · Welding converters · Switched Mode Power Supplies · Uninterruptible Power Supplies G1 S1 Q2 OUT1 OUT2 Q4 G3 S3 G2 S2 NTC1 0/VBU S NTC2 G4 S4 www.DataSheet4U.com Features · Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged · Kelvin source for easy drive · Very low stray inductance - Symmetrical design - Lead frames for power connections · Internal thermistor for temperature monitoring · High level of integration Benefits · Outstanding performance at high frequency operation · Direct mounting to heatsink (isolated package) · Low junction to case thermal resistance · Solderable terminals both for power and signal for easy PCB mounting · Low profile G3 S3 G4 S4 OUT2 VBUS 0/VBUS OUT1 S1 G1 S2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 200 89 66 356 ±30 20 357 89 50 2500 Unit V A V mW W A mJ Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM20HM20FT – Rev 1 May, 2004 APTM20HM20FT All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V, ID = 250µA VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V Min 200 Tj = 25°C Tj = 125°C 3 Typ Max 250 1000 20 5 ±100 Unit V µA mW V nA VGS = 10V, ID = 44.5A VGS = VDS, ID = 2.5mA VGS = ±30 V, VDS = 0V Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy u Turn-off Switching Energy v Turn-on Switching Energy u Turn-off Switching Energy v Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 100V ID = 75A Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 75A RG = 5W Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 75A, RG = 5Ω Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 75A, RG = 5Ω Min Typ 6850 2180 97 112 43 47 28 56 81 99 463 455 608 531 µJ µJ ns Max Unit pF nC Source - Drain diode ratings and characteristics Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery w trr Qrr Reverse Recovery Time Reverse Recovery Charge Test Conditions Tc = 25°C Tc = 80°C VGS = 0V, IS = - 75A IS = - 75A VR = 133V diS/dt = 100A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min Typ Max 89 66 1.3 8 220 420 Unit A V V/ns ns µC APTM20HM20FT – Rev 1 May, 2004 1.07 2.9 u Eon includes diode reverse recovery. v In accordance with JEDEC standard JESD24-1. w dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS £ - 75A di/dt £ 700A/µs VR £ VDSS Tj £ 150°C APT website – http://www.advancedpower.com 2–6 APTM20HM20FT Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Min 2500 -40 -40 -40 Typ Max 0.35 150 125 100 4.7 160 Unit °C/W V °C N.m g Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink M5 Temperature sensor NTC Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.16 K RT = é æ1 1 öù T: Thermistor temperature exp ê B25 / 85 ç ç T - T ÷ú RT: Thermistor value at T ÷ è 25 øû ë R 25 Min Typ 68 4080 Max Unit kW K Package outline APT website – http://www.advancedpower.com 3–6 APTM20HM20FT – Rev 1 May, 2004 APTM20HM20FT Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 0.01 Single Pulse 0.9 0 0.00001 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 250 VGS=15&10V 9V 200 ID, Drain Current (A) 160 120 80 40 0 Transfert Characteristics VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle ID, Drain Current (A) 200 150 100 50 0 0 5 10 15 20 25 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.2 1.15 1.1 1.05 1 0.95 0.9 0 20 40 60 80 100 ID, Drain Current (A) 120 VGS=20V 7.5V 7V 6.5V 6V 5.5V TJ=25°C TJ=125°C T J=-55°C 2 3 4 5 6 7 8 9 VGS, Gate to Source Voltage (V) RDS(on) Drain to Source ON Resistance DC Drain Current vs Case Temperature 100 ID, DC Drain Current (A) Normalized to VGS=10V @ 44.5A 80 60 40 20 0 25 50 75 100 125 TC, Case Temperature (°C) 150 APTM20HM20FT – Rev 1 May, 2004 VGS=10V APT website – http://www.advancedpower.com 4–6 APTM20HM20FT RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) Ciss Coss 1000 Crss 1 ID, Drain Current (A) 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area ON resistance vs Temperature VGS=10V ID= 44.5A 1000 100 limited by RDSon 100µs 1ms 10 Single pulse TJ=150°C 10ms DC line 1 10 100 1000 VDS, Drain to Source Voltage (V) 10000 VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage 12 VDS=40V ID=75A 10 TJ=25°C VDS=100V 8 6 4 2 0 0 25 50 75 100 125 Gate Charge (nC) VDS=160V 100 10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) APT website – http://www.advancedpower.com 5–6 APTM20HM20FT – Rev 1 May, 2004 APTM20HM20FT Delay Times vs Current 90 80 td(on) and td(off) (ns) 70 60 50 40 30 20 10 0 25 50 75 100 125 150 ID, Drain Current (A) Switching Energy vs Current VDS=133V RG=5Ω TJ=125°C L=100µH Rise and Fall times vs Current 160 140 VDS=133V RG=5Ω TJ=125°C L=100µH td(off) tr and tf (ns) tf 120 100 80 60 40 20 0 0 tr td(on) 25 50 75 100 125 150 ID, Drain Current (A) Switching Energy vs Gate Resistance 1500 1200 1000 Eon and Eoff (µJ) Switching Energy (µJ) 800 600 400 200 0 0 VDS=133V RG=5Ω TJ=125°C L=100µH Eon Eoff 1250 1000 750 500 250 VDS=133V ID=75A TJ=125°C L=100µH Eoff Eon 25 50 75 100 125 150 0 5 10 15 20 25 30 35 40 ID, Drain Current (A) Operating Frequency vs Drain Current 300 Frequency (kHz) 250 200 150 100 50 0 10 20 30 40 50 60 70 ID, Drain Current (A) 80 VDS=133V D=50% RG=5Ω TJ=125°C Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 IDR, Reverse Drain Current (A) 350 100 TJ=150°C TJ=25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 VSD, Source to Drain Voltage (V) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6–6 APTM20HM20FT – Rev 1 May, 2004