MOSFET Power Module

APTM20DHM16T Asymmetrical - Bridge MOSFET Power Module VBUS VBUS SENSE Q1 CR3 VDSS = 200V RDSon = 16mW max @ Tj = 25°C ID = 104A @ Tc = 25°C Application · · · Welding converters Switched Mode Power Supplies Switched Reluctance Motor Drives G1 S1 OUT1 OUT2 Q4 Features · Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration CR2 G4 0/VBU S SENSE S4 0/VBU S NTC2 NT C1 · · · · www.DataSheet4U.com VBUS SENSE G4 S4 OUT2 Benefits · · · · · Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile VBUS 0/VBUS OUT1 S1 G1 0/VBUS SENSE NTC2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc= 25°C Tc = 80°C Max ratings 200 104 77 416 ±30 16 390 100 50 3000 Unit V A V mW W A mJ Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM20DHM16T – Rev 2 May, 2004 APTM20DHM16T All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V, ID = 250µA VGS = 0V,VDS= 200V VGS = 0V,VDS= 160V Tj = 25°C Tj = 125°C Min 200 Typ Max 100 500 16 5 ±100 Unit V µA mW V nA VGS = 10V, ID = 52A VGS = VDS, ID = 2.5mA VGS = ±30 V, VDS = 0V 3 Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy u Turn-off Switching Energy v Turn-on Switching Energy u Turn-off Switching Energy v Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 100V ID = 104A Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 104A RG = 5W Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 104A, RG = 5Ω Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 104A, RG = 5Ω Min Typ 7220 2330 146 140 53 67 32 64 88 116 849 929 936 986 µJ µJ ns Max Unit pF nC Diode ratings and characteristics Symbol Characteristic Maximum Average Forward Current IF(AV) VF Diode Forward Voltage Test Conditions 50% duty cycle Tc = 90°C Min trr Qrr Reverse Recovery Time Reverse Recovery Charge IF = 100A IF = 200A IF = 100A IF = 100A VR = 133V di/dt = 200A/µs IF = 100A VR = 133V di/dt = 200A/µs Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Typ 100 1 1.4 0.9 60 110 200 840 Max 1.1 Unit A V ns nC May, 2004 2–6 APTM20DHM16T – Rev 2 u Eon includes diode reverse recovery. v In accordance with JEDEC standard JESD24-1. APT website – http://www.advancedpower.com APTM20DHM16T Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Transistor Diode 2500 -40 -40 -40 Min Typ Max 0.32 0.6 150 125 100 4.7 160 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz To Heatsink M5 Temperature sensor NTC Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.16 K RT = é æ1 1 öù T: Thermistor temperature exp ê B25 / 85 ç ç T - T ÷ú RT: Thermistor value at T ÷ è 25 øû ë R 25 Min Typ 68 4080 Max Unit kW K Package outline APT website – http://www.advancedpower.com 3–6 APTM20DHM16T – Rev 2 May, 2004 APTM20DHM16T Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 Thermal Impedance (°C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0.3 0.1 Single Pulse 0.9 0.7 0.5 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics VGS=15V 350 300 ID, Drain Current (A) 250 200 150 100 50 0 Transfert Characteristics 300 ID, Drain Current (A) 250 200 150 100 50 0 TJ=25°C TJ=125°C TJ=-55°C VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 10V 9V 8.5V 8V 7.5V 7V 6.5V 0 4 8 12 16 20 24 28 0 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.2 ID, DC Drain Current (A) Normalized to VGS=10V @ 52A 1 2 3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V) RDS(on) Drain to Source ON Resistance DC Drain Current vs Case Temperature 120 100 80 60 40 20 0 1.1 1 VGS=10V VGS=20V 0.9 0.8 0 25 50 75 100 125 150 ID, Drain Current (A) 25 50 75 100 125 150 May, 2004 4–6 APTM20DHM16T – Rev 2 TC, Case Temperature (°C) APT website – http://www.advancedpower.com APTM20DHM16T RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area VGS=10V ID= 52A 1000 limited by RDSon 100 100µs 10 Single pulse TJ=150°C 1 1 1ms 10ms 100ms 10 100 1000 VDS, Drain to Source Voltage (V) VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 ID=104A VDS=40V 12 TJ=25°C 10 8 6 4 2 0 0 20 40 60 80 100 120 140 160 Gate Charge (nC) May, 2004 VDS=100V 10000 Ciss Coss VDS=160V 1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) APT website – http://www.advancedpower.com 5–6 APTM20DHM16T – Rev 2 APTM20DHM16T Delay Times vs Current 120 100 td(on) and td(off) (ns) 80 60 40 20 0 0 25 50 75 100 125 150 175 ID, Drain Current (A) VDS=133V RG=5Ω TJ=125°C L=100µH Rise and Fall times vs Current 160 140 VDS=133V RG=5Ω TJ=125°C L=100µH td(off) tr and tf (ns) 120 100 80 60 40 20 0 0 tf td(on) tr 25 50 75 100 125 150 175 ID, Drain Current (A) Switching Energy vs Current 2 Switching Energy (mJ) 1.5 1 0.5 0 0 25 50 75 100 125 150 175 ID, Drain Current (A) Operating Frequency vs Drain Current VDS=133V D=50% RG=5Ω TJ=125°C VDS=133V RG=5Ω TJ=125°C L=100µH Switching Energy vs Gate Resistance 3 VDS=133V ID=104A TJ=125°C L=100µH Eoff Eon and Eoff (mJ) 2.5 2 1.5 1 0.5 0 Eoff Eon Eon 5 10 15 20 25 30 35 40 45 50 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 1000 TJ=150°C 300 250 Frequency (kHz) 200 150 100 50 0 25 38 50 63 75 88 100 ID, Drain Current (A) 100 TJ=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) May, 2004 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6–6 APTM20DHM16T – Rev 2