Dual boost chopper Super Junction MOSFET Power Module

APTC60DDAM35T3 Dual boost chopper Super Junction MOSFET Power Module 13 14 VDSS = 600V RDSon = 35mΩ max @ Tj = 25°C ID = 72A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • CR1 22 7 CR2 23 Q1 26 8 Q2 4 27 29 15 30 31 R1 32 16 3 • • • • - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration www.DataSheet4U.com 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a single boost of twice the current capability All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-6 APTC60DDAM35T3 – Rev 1 June, 2005 Max ratings 600 72 54 200 ±20 35 416 20 1 1800 Unit V A V mΩ W A APTC60DDAM35T3 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol BVDSS IDSS RDS(on) VGS(th) IGSS Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V, ID = 375µA Min 600 VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Typ 1 Max 40 375 35 3.9 ±150 Unit V µA mΩ V nA Tj = 25°C Tj = 125°C 2.1 VGS = 10V, ID = 72A VGS = VDS, ID = 5.4mA VGS = ±20 V, VDS = 0V 3 Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 300V ID = 72A Inductive Switching @ 125°C VGS = 15V VBus = 400V ID = 72A R G = 2.5Ω Inductive switching @ 25°C VGS = 15V, VBus = 400V ID = 72A, R G = 2.5Ω Inductive switching @ 125°C VGS = 15V, VBus = 400V ID = 72A, R G = 2.5Ω Min Typ 14 5.13 0.42 518 58 222 21 30 283 84 1340 1960 2192 2412 Max Unit nF nC ns µJ µJ Chopper diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF(A V) VF Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage Test Conditions VR=600V 50% duty cycle Min 600 Tj = 25°C Tj = 125°C Tc = 70°C Typ Max 250 750 Unit V µA A IF = 60A IF = 120A IF = 60A IF = 60A VR = 400V di/dt=200A/µs Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 60 2.2 2.3 1.4 55 151 121 999 2.7 V Qrr Reverse Recovery Charge nC Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1. APT website – http://www.advancedpower.com 2-6 APTC60DDAM35T3 – Rev 1 June, 2005 trr Reverse Recovery Time ns APTC60DDAM35T3 Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 1.5 Min Typ Max 0.3 0.9 150 125 100 4.7 110 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz To heatsink M4 Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K Min Typ 50 3952 Max Unit kΩ K RT = R 25   1 1  RT : Thermistor value at T exp B 25 / 85    T − T    25  T: Thermistor temperature Package outline (dimensions in mm) 1 12 APT website – http://www.advancedpower.com 3-6 APTC60DDAM35T3 – Rev 1 June, 2005 17 28 APTC60DDAM35T3 Typical Performance Curve 0.35 Thermal Impedance (°C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0.5 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 1 10 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0 0.00001 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 400 360 320 280 240 200 160 120 80 40 0 0 280 6.5V 6V 5.5V 5V 4.5V 4V 5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current I D, DC Drain Current (A) Normalized to VGS=10V @ 36A Transfert Characteristics 240 200 160 120 80 40 0 25 0 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 7 TJ=125°C TJ=25°C TJ=-55°C VDS > ID(on)xRDS (on)MAX 250µs pulse test @ < 0.5 duty cycle ID, Drain Current (A) I D, Drain Current (A) VGS=15&10V RDS(on) Drain to Source ON Resistance 1.1 1.05 1 0.95 0.9 0 DC Drain Current vs Case Temperature 80 VGS =10V 70 60 50 40 30 20 10 0 25 50 75 100 125 TC, Case Temperature (°C) 150 APTC60DDAM35T3 – Rev 1 June, 2005 VGS=20V 20 40 60 80 100 120 I D, Drain Current (A) APT website – http://www.advancedpower.com 4-6 APTC60DDAM35T3 RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area V GS=10V ID= 72A Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1000 I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 100 10 limited by RDSon 100 µs 1 ms DC line 10 ms 1 0.1 1 Single pulse TJ =150°C 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS , Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 Ciss C, Capacitance (pF) 14 12 10 8 6 4 2 0 0 100 200 300 400 Gate Charge (nC) 500 600 ID=72A TJ=25°C V DS=120V VDS=300V V DS =480V 10000 Coss 1000 Crss 100 10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) APT website – http://www.advancedpower.com 5-6 APTC60DDAM35T3 – Rev 1 June, 2005 APTC60DDAM35T3 350 300 td(on) and td(off) (ns) Delay Times vs Current 120 td(off) VDS=400V RG=2.5Ω TJ=125°C L=100µH Rise and Fall times vs Current VDS=400V RG=2.5Ω T J=125°C L=100µH 100 tr and t f (ns) 250 200 150 100 50 0 0 20 40 60 80 100 120 ID, Drain Current (A) Switching Energy vs Current 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 Switching Energy (mJ) VDS=400V RG=2.5Ω TJ=125°C L=100µH tf 80 60 40 20 0 0 td(on) tr 20 40 60 80 100 120 ID, Drain Current (A) Switching Energy vs Gate Resistance 10 8 6 4 2 0 VDS=400V ID=72A T J=125°C L=100µH Switching Energy (mJ) Eoff Eon Eoff Eon 20 40 60 80 100 ID, Drain Current (A) 120 0 5 10 15 20 25 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 TJ=150°C 100 TJ =25°C 10 Operating Frequency vs Drain Current 140 120 Frequency (kHz) ZCS ZVS 100 80 60 40 20 0 15 20 25 30 35 40 45 50 55 60 65 ID, Drain Current (A) VDS=400V D=50% RG=2.5Ω TJ=125°C TC=75°C hard switching I DR, Reverse Drain Current (A) 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) APTC60DDAM35T3 – Rev 1 June, 2005 “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6-6