Super Junction MOSFET

APT77N60JC3 600V 77A 0.035Ω Ω Super Junction MOSFET C OLMOS O Power Semiconductors S G D S SO 2 T- 27 • Ultra low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • N-Channel Enhancement Mode • Popular SOT-227 Package MAXIMUM RATINGS Symbol VDSS ID IDM VGS www.DataSheet4U.com "UL Recognized" ISOTOP ® D G S All Ratings: TC = 25°C unless otherwise specified. APT77N60JC3 UNIT Volts Amps Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 600 77 231 ±20 ±30 568 4.55 -55 to 150 300 50 20 1 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 480V, ID = 77A, TJ = 125°C) Repetitive Avalanche Current Repetitive Avalanche Energy 7 7 VGSM PD TJ,TSTG TL dv/ dt Volts Watts W/°C °C V/ns Amps mJ IAR EAR EAS Single Pulse Avalanche Energy 1800 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 500µA) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 600 .030 1.0 0.035 50 500 ±200 2.1 3 3.9 (VGS = 10V, ID = 60A) Ohms µA nA Volts Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V, TJ = 150°C) Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5.4mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com "COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG" 050-7146 Rev E 6-2004 DYNAMIC CHARACTERISTICS Symbol C iss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT77N60JC3 Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 77A @ 25°C RESISTIVE SWITCHING VGS = 10V VDD = 380V ID = 77A @ 125°C RG = 0.9Ω 6 INDUCTIVE SWITCHING @ 25°C VDD = 400V, VGS = 15V ID = 77A, RG = 5Ω 6 INDUCTIVE SWITCHING @ 125°C VDD = 400V, VGS = 15V ID = 77A, RG = 5Ω MIN TYP MAX UNIT 13600 4400 290 505 48 240 18 27 110 8 1670 2880 2300 3100 MIN TYP MAX UNIT Amps Volts ns µC pF 640 nC Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy 165 12 ns µJ SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr dv/ dt Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage 1 2 77 231 1 861 46 6 MIN TYP MAX (Body Diode) (VGS = 0V, IS = -77A) 1.2 Reverse Recovery Time (IS = -77A, dl S /dt = 100A/µs, VR = 350V) Reverse Recovery Charge (IS = -77A, dl S/dt = 100A/µs, VR = 350V) Peak Diode Recovery dv/ dt 5 V/ns THERMAL CHARACTERISTICS Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient UNIT °C/W 0.22 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 APT Reserves the right to change, without notice, the specifications and information contained herein. 0.25 , THERMAL IMPEDANCE (°C/W) 4 Starting Tj = +25°C, L = 36.0mH, RG = 25Ω, Peak IL = 10A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID77A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. 7 Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f 0.20 0.9 0.15 0.7 0.5 0.10 0.3 0.05 0.1 0.05 0 10-5 10-4 SINGLE PULSE Note: PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 6-2004 050-7146 Rev E Z θJC 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves Junction temp. (°C) RC MODEL 200 180 ID, DRAIN CURRENT (AMPERES) APT77N60JC3 VGS =15 &10V 6V & 6.5V 5.5V 0.00999 0.00421F 160 140 120 100 80 60 40 20 0 0.0212 Power (watts) 0.0724 0.00198F 5V 0.0129F 4.5V 4V 0.116 Case temperature. (°C) 0.314F FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 200 180 ID, DRAIN CURRENT (AMPERES) 0 5 10 15 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40 NORMALIZED TO = 10V @ 47A V GS VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @ <0.5 % DUTY CYCLE TJ = -55°C 160 140 120 100 80 60 40 20 0 TJ = +125°C 0 1 2 3 4 5 6 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS TJ = +25°C 1.30 1.20 1.10 1.00 VGS=20V 0.90 0.80 VGS=10V 0 80 70 ID, DRAIN CURRENT (AMPERES) BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 40 60 80 100 120 140 160 180 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 20 60 50 40 30 20 10 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 3 2.5 2.0 1.5 1.0 0.5 0 -50 I V D = 47A = 10V -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 GS VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-7146 Rev E 6-2004 Typical Performance Curves 231 100 C, CAPACITANCE (pF) OPERATION HERE LIMITED BY RDS (ON) 60,000 APT77N60JC3 Ciss ID, DRAIN CURRENT (AMPERES) 10,000 Coss 1,000 50 100µS 10 5 TC =+25°C TJ =+150°C SINGLE PULSE 1mS 10mS 100 Crss 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) I D = 77A IDR, REVERSE DRAIN CURRENT (AMPERES) 1 10 100 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 16 1 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 200 100 TJ =+150°C TJ =+25°C 10 12 VDS= 120V 8 VDS= 300V VDS= 480V 4 100 200 300 400 500 600 700 800 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 600 500 td(off) V = 400V 0 0 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 250 V DD G 1 = 400V R = 5Ω 200 T = 125°C J L = 100µH tf td(on) and td(off) (ns) 400 300 200 100 DD G R = 5Ω T = 125°C J L = 100µH tr and tf (ns) 150 100 tr 50 td(on) 0 10 70 90 110 130 150 ID (A) FIGURE 14, DELAY TIMES vs CURRENT DD G 30 50 70 90 110 130 150 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 16000 14000 SWITCHING ENERGY (µJ) V I DD 0 10 30 50 8000 7000 SWITCHING ENERGY (µJ) V = 400V = 400V R = 5Ω T = 125°C J D J = 77A T = 125°C 6000 5000 4000 3000 2000 1000 L = 100µH EON includes diode reverse recovery. 12000 10000 8000 6000 4000 2000 Eoff L = 100µH E ON includes diode reverse recovery. Eoff 6-2004 Eon Eon 050-7146 Rev E 70 90 110 130 150 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT 0 10 30 50 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE 0 0 5 APT77N60JC3 10% td(on) tr 90% 5% 10% Switching Energy Gate Voltage T TJ = 125 C 90% Gate Voltage TJ = 125 C td(off) Collector Current tf 90% Collector Current 5% Collector Voltage Collector Voltage 0 10% Switching Energy Figure 18, Turn-on Switching Waveforms and Definitions Figure 19, Turn-off Switching Waveforms and Definitions APT30DF60 V DD IC V CE G D.U.T. Figure 20, Inductive Switching Test Circuit SOT-227 (ISOTOP®) Package Outline 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) * Source Drain * Source terminals are shorted internally. Current handling capability is equal for either Source terminal. * Source Dimensions in Millimeters and (Inches) ISOTOP® is a Registered Trademark of SGS Thomson. Gate APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 050-7146 Rev E 6-2004 3.3 (.129) 3.6 (.143) 1.95 (.077) 2.14 (.084)