APT75GT120JRDQ3 (Advanced Power Technology)

Part Number	APT75GT120JRDQ3
Manufacturer	Advanced Power Technology
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TYPICAL PERFORMANCE CURVES ® APT75GT120JRDQ3 1200V APT75GT120JRDQ3 Thunderbolt IGBT® The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop • Low Tail Current • RBSOA and SCSOA Rated • High Freq. Switching to 20KHz • Ultra Low Leakage Current E G C E S OT 22 7 ISOTOP ® "UL Recognized" file # E145592 C G E MAXIMUM RATINGS Symbol VCES VGE www.DataSheet4U.com All Ratings: TC = 25°C unless otherwise speciﬁed. APT75GT120JRDQ3 UNIT Volts Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 1200 ±30 97 42 225 225A @ 1200V 481 -55 to 150 300 I C1 I C2 I CM SSOA PD TJ,TSTG TL Amps @ TC = 150°C Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. Watts °C STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA) Gate Threshold Voltage (VCE = VGE, I C = 3mA, Tj = 25°C) MIN TYP MAX Units 1200 4.5 2.7 2 2 5.5 3.2 3.9 6.5 3.7 200 TBD 480 Collector-Emitter On Voltage (VGE = 15V, I C = 75A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 75A, Tj = 125°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) Volts I CES I GES RG(int) Gate-Emitter Leakage Current (VGE = ±20V) Intergrated Gate Resistor nA Ω CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com 052-6276 Rev C 5 12-2005 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) µA DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 APT75GT120JRDQ3 Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 600V I C = 75A TJ = 150°C, R G = 4.3Ω, VGE = Inductive Switching (25°C) VCC = 800V VGE = 15V RG = 1.0Ω I C = 75A VGE = 15V MIN TYP MAX UNIT pF V nC 2570 250 155 7.5 240 15 110 225 50 65 375 25 8045 8845 2970 50 65 415 29 8050 12660 4215 µJ ns A Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy 44 55 4 5 15V, L = 100µH,VCE = 1200V ns Turn-on Switching Energy (Diode) 6 TJ = +25°C Inductive Switching (125°C) VCC = 800V VGE = 15V RG = 1.0Ω I C = 75A µJ Turn-on Switching Energy (Diode) 66 TJ = +125°C THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC RθJC WT VIsolation Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) 2500 MIN TYP MAX UNIT °C/W gm Volts .26 .56 29.2 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in ﬁgure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 12-2005 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) APT Reserves the right to change, without notice, the speciﬁcations and information contained herein. 052-6276 Rev C TYPICAL PERFORMANCE CURVES 200 180 IC, COLLECTOR CURRENT (A) 160 140 120 100 80 60 40 20 0 V GE = 15V 140 120 100 80 60 40 20 0 APT75GT120JRDQ3 15V 13V TC = 25°C TC = 125°C IC, COLLECTOR CURRENT (A) 12V 11V 10V 9V 8V 7V 200 180 IC, COLLECTOR CURRENT (A) 160 140 120 100 FIGURE 1, Output Characteristics(VGE = 15V) VGE, GATE-TO-EMITTER VOLTAGE (V) 250µs PULSE TEST<0.5 % DUTY CYCLE 0 1 2 3 4 5 6 7 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) TJ = -55°C 16 14 12 10 FIGURE 2, Output Characteristics (TJ = 125°C) I = 75A C T = 25°C J 0 5 10 15 20 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) VCE = 120V VCE = 300V 8 6 4 2 0 80 60 40 20 0 VCE = 480V TJ = 25°C TJ = 125°C 0 2 4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 0 50 100 150 200 GATE CHARGE (nC) FIGURE 4, Gate Charge 250 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 TJ = 25°C. 250µs PULSE TEST <0.5 % DUTY CYCLE 6 IC = 150A IC = 150A 5 4 3 2 1 0 IC = 75A IC = 37.5A IC = 75A IC = 37.5A 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.10 0 VGE = 15V. 250µs PULSE TEST <0.5 % DUTY CYCLE 8 25 50 75 100 125 150 TJ, Junction Temperature (°C) FIGURE 6, On State Voltage vs Junction Temperature 140 0 1.00 0.95 0.90 0.85 0.80 0.75 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, Threshold Voltage vs. Junction Temperature IC, DC COLLECTOR CURRENT(A) VGS(TH), THRESHOLD VOLTAGE 1.05 120 100 80 60 40 20 0 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 8, DC Collector Current vs Case Temperature 12-2005 052-6276 Rev C (NORMALIZED) 60 50 40 30 20 10 T = 25°C, or 125°C J 160 130 100 70 40 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current VCE = 400V RG = 1.0Ω L = 100µH 500 APT75GT120JRDQ3 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 400 VGE =15V,TJ=25°C VGE = 15V 300 VGE =15V,TJ=125°C 200 100 0 160 130 100 70 40 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 70 60 50 40 30 20 10 160 130 100 70 40 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 10000 0 TJ = 125°C, VGE = 15V RG = 1.0Ω, L = 100µH, VCE = 400V 0 VCE = 400V RG = 1.0Ω L = 100µH 160 140 120 100 80 60 40 20 0 RG = 1.0Ω, L = 100µH, VCE = 400V tf, FALL TIME (ns) tr, RISE TIME (ns) TJ = 25 or 125°C,VGE = 15V TJ = 25°C, VGE = 15V 160 130 100 70 40 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 50000 EON2, TURN ON ENERGY LOSS (µJ) EOFF, TURN OFF ENERGY LOSS (µJ) V = 400V CE V = +15V GE R = 1.0Ω G V = 400V CE V = +15V GE R = 1.0Ω G 40000 TJ = 125°C 8000 TJ = 125°C 30000 6000 20000 4000 10000 TJ = 25°C 2000 TJ = 25°C 160 130 100 70 40 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 0 160 130 100 70 40 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 45000 = 400V V CE = +15V V GE R = 1.0Ω G 0 100000 SWITCHING ENERGY LOSSES (µJ) J 80000 Eon2,150A SWITCHING ENERGY LOSSES (µJ) = 400V V CE = +15V V GE T = 125°C 40000 35000 30000 25000 20000 15000 10000 5000 0 0 Eon2,150A 60000 40000 12-2005 Eoff,150A Eon2,75A Eoff,75A Eon2,37.5A Eon2,75A Eon2,37.5A Eoff,37.5A 20000 Eoff,37.5A Eoff,150A Eoff,75A Rev C 052-6276 50 40 30 20 10 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance 0 0 125 100 75 50 25 TJ, JUNCTION TEMPERATURE (°C) FIGURE 16, Switching Energy Losses vs Junction Temperature TYPICAL PERFORMANCE CURVES 4,000 Cies IC, COLLECTOR CURRENT (A) 250 APT75GT120JRDQ3 200 C, CAPACITANCE ( F) P 1,000 150 500 100 Coes Cres 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 100 50 0 200 400 600 800 1000 1200 1400 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area 0 0.30 0.25 0.20 0.15 0.10 0.05 0 ZθJC, THERMAL IMPEDANCE (°C/W) D = 0.9 0.7 0.5 Note: PDM 0.3 0.1 0.05 10-5 10-4 t1 t2 SINGLE PULSE Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC t 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 10 50 RC MODEL Junction temp. (°C) 0.0594 0.0254 FMAX, OPERATING FREQUENCY (kHz) F 10 5 T = 125°C J T = 75°C C D = 50 % V = 400V CE R = 5Ω G Power (watts) 0.158 0.496 = min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf max fmax2 = Pdiss = Pdiss - Pcond Eon2 + Eoff TJ - TC RθJC 0.0436 Case temperature. (°C) 11.6 Figure 19b, TRANSIENT THERMAL IMPEDANCE MODEL 25 35 45 55 65 75 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current 3 15 052-6276 Rev C 12-2005 APT75GT120JRDQ3 APT60DQ120 10% td(on) Gate Voltage TJ = 125°C V CC IC V CE tr Collector Current 90% 10% 5% CollectorVoltage 5% A D.U.T. Switching Energy Figure 21, Inductive Switching Test Circuit Figure 22, Turn-on Switching Waveforms and Deﬁnitions 90% Gate Voltage TJ = 125°C td(off) CollectorVoltage 90% tf 10% 0 Collector Current Switching Energy Figure 23, Turn-off Switching Waveforms and Deﬁnitions 052-6276 Rev C 12-2005 TYPICAL PERFORMANCE CURVES APT75GT120JRDQ3 ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE MAXIMUM RATINGS Symbol IF(AV) IF(RMS) IFSM Symbol VF Characteristic / Test Conditions Maximum Average Forward Current (TC = 85°C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% d