POWER MOS 7 IGBT

TYPICAL PERFORMANCE CURVES ® APT75GP120JDQ3 1200V APT75GP120JDQ3 POWER MOS 7 IGBT ® E G C E The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. • Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff • 50 kHz operation @ 800V, 20A • 20 kHz operation @ 800V, 44A • RBSOA Rated S OT 22 7 ISOTOP ® "UL Recognized" file # E145592 C G E MAXIMUM RATINGS Symbol VCES VGE www.DataSheet4U.com All Ratings: TC = 25°C unless otherwise specified. APT75GP120JDQ3 UNIT Volts Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 1200 ±20 128 57 300 300A @ 960V 543 -55 to 150 300 I C1 I C2 I CM RBSOA PD TJ,TSTG TL Amps @ TC = 150°C Reverse Bias Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. Watts °C STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1250µA) Gate Threshold Voltage (VCE = VGE, I C = 2.5mA, Tj = 25°C) MIN TYP MAX Units 1200 3 4.5 3.3 3.0 1250 2 6 3.9 Collector-Emitter On Voltage (VGE = 15V, I C = 75A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 75A, Tj = 125°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2 Volts I CES I GES Gate-Emitter Leakage Current (VGE = ±20V) ±100 nA CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. 050-7458 APT Website - http://www.advancedpower.com Rev A 10-2005 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) µA 5500 DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc RBSOA td(on) td(off) tf Eon1 Eon2 td(on) tr td(off) tf Eon1 Eon2 Eoff Eoff tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 APT75GP120JDQ3 Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 600V I C = 75A TJ = 150°C, R G = 5Ω, VGE = VGE = 15V MIN TYP MAX UNIT pF V nC 7035 460 80 7.5 320 50 140 300 20 40 165 55 1620 4100 2500 20 40 245 115 1620 5850 4820 µJ ns ns A Gate-Emitter Charge Gate-Collector ("Miller ") Charge Reverse Bias Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy 44 55 4 5 15V, L = 100µH,VCE = 960V Inductive Switching (25°C) VCC = 600V VGE = 15V I C = 75A RG = 5Ω Turn-on Switching Energy (Diode) 6 TJ = +25°C Inductive Switching (125°C) VCC = 600V VGE = 15V I C = 75A RG = 5Ω µJ Turn-on Switching Energy (Diode) 6 TJ = +125°C THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC RθJC WT VIsolation Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) 2500 MIN TYP MAX UNIT °C/W gm Volts .23 .56 29.2 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 10-2005 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) APT Reserves the right to change, without notice, the specifications and information contained herein. 050-7458 Rev A TYPICAL PERFORMANCE CURVES 160 140 IC, COLLECTOR CURRENT (A) 120 100 80 60 40 20 0 V = 15V GE 250µs PULSE TEST <0.5 % DUTY CYCLE 160 140 IC, COLLECTOR CURRENT (A) 120 100 80 60 40 20 0 APT75GP120JDQ3 V = 10V GE 250µs PULSE TEST <0.5 % DUTY CYCLE TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C 250 FIGURE 1, Output Characteristics(TJ = 25°C) VGE, GATE-TO-EMITTER VOLTAGE (V) 250µs PULSE TEST<0.5 % DUTY CYCLE 0 1 2 3 4 5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 16 14 12 10 FIGURE 2, Output Characteristics (TJ = 125°C) I = 75A C T = 25°C J 0 1 2 3 4 5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) 200 VCE = 240V VCE = 600V 150 TJ = -55°C TJ = 25°C TJ = 125°C 8 6 4 2 0 100 VCE = 960V 50 0 0 234 56 78 9 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics 1 0 50 100 150 200 250 GATE CHARGE (nC) FIGURE 4, Gate Charge 300 350 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) IC = 150A TJ = 25°C. 250µs PULSE TEST <0.5 % DUTY CYCLE VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 5 5.0 4 4.0 IC = 150A IC = 75A IC = 75A 3 3.0 IC = 37.5A 2 IC = 37.5A 2.0 1 1.0 VGE = 15V. 250µs PULSE TEST <0.5 % DUTY CYCLE 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.10 0 6 25 50 75 100 125 TJ, Junction Temperature (°C) FIGURE 6, On State Voltage vs Junction Temperature 180 0 0 BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED) IC, DC COLLECTOR CURRENT(A) 160 140 120 100 80 60 40 20 10-2005 050-7458 Rev A 1.05 1.00 0.95 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, Breakdown Voltage vs. Junction Temperature 0.90 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 8, DC Collector Current vs Case Temperature 0 -50 30 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 350 300 250 200 150 100 50 VCE = 600V RG = 5Ω VGE =15V,TJ=25°C VGE =15V,TJ=125°C APT75GP120JDQ3 VGE = 15V 20 10 VCE = 600V TJ = 25°C, TJ =125°C RG = 5Ω L = 100 µH 20 40 60 80 100 120 140 160 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 100 RG = 5Ω, L = 100µH, VCE = 600V 0 0 20 40 60 80 100 120 140 160 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 160 140 RG = 5Ω, L = 100µH, VCE = 600V 0 L = 100 µH 0 80 tf, FALL TIME (ns) tr, RISE TIME (ns) TJ = 125°C, VGE = 15V 120 100 80 60 40 TJ = 25 or 125°C,VGE = 15V 60 40 20 20 0 TJ = 25°C, VGE = 15V 0 20 40 60 80 100 120 140 160 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 15000 EON2, TURN ON ENERGY LOSS (µJ) EOFF, TURN OFF ENERGY LOSS (µJ) V = 600V CE V = +15V GE R = 5Ω G 0 0 20 40 60 80 100 120 140 160 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 12000 10000 8000 6000 4000 2000 0 V = 600V CE V = +15V GE R = 5Ω G TJ = 125°C,VGE =15V TJ = 125°C, VGE = 15V 10000 5000 TJ = 25°C,VGE =15V TJ = 25°C, VGE = 15V 0 20 40 60 80 100 120 140 160 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 20000 SWITCHING ENERGY LOSSES (µJ) V = 600V CE V = +15V GE T = 125°C J 0 0 20 40 60 80 100 120 140 160 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 15000 SWITCHING ENERGY LOSSES (µJ) V = 600V CE V = +15V GE R = 5Ω G Eon2,150A Eoff,150A Eon2,150A 12500 10000 7500 5000 2500 0 15000 10000 Eon2,75A Eoff,150A Eon2,75A Eon2,37.5A Eoff,37.5A 10-2005 5000 Eon2,37.5A Eoff,75A Eoff,37.5A Eoff,75A Rev A 050-7458 10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance 0 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) FIGURE 16, Switching Energy Losses vs Junction Temperature 0 TYPICAL PERFORMANCE CURVES 20,000 1,000 500 C, CAPACITANCE ( F) P 350 Cies IC, COLLECTOR CURRENT (A) 300 250 200 150 100 50 APT75GP120JDQ3 100 50 Coes 10 Cres 0 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 0 200 400 600 800 1000 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area 0 0.25 0.9 0.20 0.7 0.15 0.5 0.10 Note: ZθJC, THERMAL IMPEDANCE (°C/W) PDM 0.3 t1 t2 0.05 0.1 0.05 SINGLE PULSE 10-4 0 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC t 10-5 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1.0 50 FMAX, OPERATING FREQUENCY (kHz) RC MODEL Junction temp (°C) 0.0221 0.0014 10 5 F Power (watts) 0.0498 0.0416 = min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf max T = 125°C J T = 75°C C D = 50 % V = XXXV CE R = 5Ω G fmax2 = Pdiss = 0.158 Case temperature (°C) 0.543 Pdiss - Pcond Eon2 + Eoff TJ - TC RθJC FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL 35 50 60 80 95 110 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current 1 20 050-7458 Rev A 10-2005 APT75GP120JDQ3 APT60DQ120 10% Gate Voltage TJ = 125°C td(on) V CC IC V CE tr Collector Current 5% Collector Voltage A D.U.T. 5% Switching Energy 90% 10% Figure 21, Inductive Switching Test Circuit Figure 22, Turn-on Switching Waveforms and Definitions VTEST *DRIVER SAME TYPE AS D.U.T. 90% Gate Voltage td(off) 90% tf Collector Voltage TJ = 125°C A V CE 100uH IC V CLAMP A B 10% Switching Energy 0 Collector Current DRIVER* D.U.T. Figure 23, Turn-off Switching Waveforms and Definitions Figure 24, EON1 Test Circuit 050-7458 Rev A 10-2005 TYPICAL PERFORMANCE CURVES APT75GP120JDQ3 ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE MAXIMUM RATINGS Symbol IF(AV) IF(R