IGBT

TYPICAL PERFORMANCE CURVES ® APT75GN60LDQ3 APT75GN60LDQ3G* APT75GN60LDQ3(G) 600V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses. TO-264 • • • • • 600V Field Stop Trench Gate: Low VCE(on) Easy Paralleling 6µs Short Circuit Capability Intergrated Gate Resistor: Low EMI, High Reliability C G E Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS Symbol VCES VGE www.DataSheet4U.com All Ratings: TC = 25°C unless otherwise specified. APT75GN60LDQ3(G) UNIT Volts Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current 8 600 ±30 @ TC = 25°C I C1 I C2 I CM SSOA PD TJ,TSTG TL 155 93 225 225A @ 600V 536 -55 to 175 300 Watts °C Amps Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 Switching Safe Operating Area @ TJ = 175°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C) MIN TYP MAX Units 600 5.0 1.05 5.8 1.45 1.87 50 2 6.5 1.85 Collector-Emitter On Voltage (VGE = 15V, I C = 75A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 75A, Tj = 125°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 Volts I CES I GES RG(int) Gate-Emitter Leakage Current (VGE = ±20V) Intergrated Gate Resistor 600 4 nA Ω CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com 050-7620 Rev B 10-2005 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) µA TBD DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA SCSOA td(on) td(off) tf Eon1 Eon2 td(on) tr td(off) tf Eon1 Eon2 Eoff Eoff tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 APT75GN60LDQ3(G) Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 300V I C = 75A TJ = 175°C, R G = 4.3Ω 7, MIN TYP MAX UNIT pF V nC 4500 370 150 9.5 485 30 270 VGE = VGE = 15V Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Short Circuit Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy 44 55 4 5 15V, L = 100µH,VCE = 600V VCC = 600V, VGE = 15V, TJ = 125°C, R G = 4.3Ω 7 Inductive Switching (25°C) VCC = 400V VGE = 15V I C = 75A 225 6 47 48 385 38 2500 3725 2140 47 48 430 55 2600 4525 2585 A µs ns RG = 1.0Ω 7 TJ = +25°C Turn-on Switching Energy (Diode) 6 µJ Inductive Switching (125°C) VCC = 400V VGE = 15V I C = 75A ns Turn-on Switching Energy (Diode) 66 TJ = +125°C RG = 1.0Ω 7 µJ THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC RθJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT °C/W gm .28 .34 5.9 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 10-2005 Rev B 050-7620 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452) 8 Continuous current limited by package lead temperature to 100A. APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES 160 140 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 120 100 80 60 40 20 0 TJ = 25°C TJ = 125°C V GE = 15V 250 APT75GN60LDQ3(G) 12V 13 & 15V 200 11V 150 10V 100 TJ = 175°C TJ = -55°C 50 9V 8V 160 140 120 100 FIGURE 1, Output Characteristics(TJ = 25°C) 250µs PULSE TEST<0.5 % DUTY CYCLE 0 0.5 1.0 1.5 2.0 2.5 3.0 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 0 7V 16 VGE, GATE-TO-EMITTER VOLTAGE (V) 14 12 10 FIGURE 2, Output Characteristics (TJ = 125°C) I = 75A C T = 25°C J 0 5 10 15 20 25 30 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) TJ = -55°C TJ = 25°C TJ = 125°C VCE = 120V VCE = 300V VCE = 480V 80 60 40 20 0 0 8 6 4 2 0 0 100 TJ = 175°C 2 4 6 8 10 12 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics IC = 150A VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 200 300 400 GATE CHARGE (nC) 500 FIGURE 4, Gate Charge 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 IC = 37.5A VGE = 15V. 250µs PULSE TEST <0.5 % DUTY CYCLE VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 3.0 2.5 2.0 IC = 75A 1.5 1.0 0.5 0 TJ = 25°C. 250µs PULSE TEST <0.5 % DUTY CYCLE IC = 150A IC = 75A IC = 37.5A 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.15 8 25 50 75 100 125 150 175 TJ, Junction Temperature (°C) FIGURE 6, On State Voltage vs Junction Temperature 200 IC, DC COLLECTOR CURRENT(A) VGS(TH), THRESHOLD VOLTAGE 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, Threshold Voltage vs. Junction Temperature 180 160 140 120 100 80 60 40 20 0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (°C) FIGURE 8, DC Collector Current vs Case Temperature 0 -50 -25 10-2005 050-7620 Rev B Lead Temperature Limited (NORMALIZED) 60 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 50 40 30 20 10 T = 25°C, or =125°C J 25 45 65 85 105 125 145 165 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 5 VCE = 400V RG = 1.0Ω L = 100 µH 600 VGE = 15V 500 400 VGE =15V,TJ=125°C APT75GN60LDQ3(G) 300 VGE =15V,TJ=25°C 200 100 VCE = 400V RG = 1.0Ω 25 45 65 85 105 125 145 165 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 5 0 0 L = 100µH 200 180 160 RG = 1.0Ω, L = 100µH, VCE = 400V 90 80 70 tf, FALL TIME (ns) 60 50 40 30 20 10 RG = 1.0Ω, L = 100µH, VCE = 400V tr, RISE TIME (ns) 140 120 100 80 60 40 20 0 TJ = 25 or 125°C,VGE = 15V TJ = 125°C, VGE = 15V TJ = 25°C, VGE = 15V 25 45 65 85 105 125 145 165 5 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 25 45 65 85 105 125 145 165 5 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 0 16 EON2, TURN ON ENERGY LOSS (mJ) 14 12 10 8 6 4 2 0 EOFF, TURN OFF ENERGY LOSS (mJ) V = 400V CE V = +15V GE R = 1.0Ω G 6 5 4 3 2 = 400V V CE = +15V V GE R = 1.0Ω G TJ = 125°C TJ = 125°C TJ = 25°C 1 0 TJ = 25°C 25 45 65 85 105 125 145 165 5 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 25 45 65 85 105 125 145 165 5 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current SWITCHING ENERGY LOSSES (mJ) 40 35 30 25 20 15 10 5 0 0 SWITCHING ENERGY LOSSES (mJ) = 400V V CE = +15V V GE T = 125°C J 16 Eon2,150A 14 12 10 8 = 400V V CE = +15V V GE R = 1.0Ω G Eon2,150A 10-2005 Eon2,75A Eoff,150A Eoff,75A Eon2,37.5A Eoff,37.5A 6 Eon2,75A 4 2 0 0 Eoff,75A Eon2,37.5A Eoff,150A Rev B Eoff,37.5A 050-7620 50 40 30 20 10 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance 125 100 75 50 25 TJ, JUNCTION TEMPERATURE (°C) FIGURE 16, Switching Energy Losses vs Junction Temperature TYPICAL PERFORMANCE CURVES 7,000 IC, COLLECTOR CURRENT (A) Cies 250 APT75GN60LDQ3(G) 200 C, CAPACITANCE ( F) P 1,000 500 Coes 150 100 50 Cres 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 100 0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area 0 0.30 0.25 0.20 0.15 0.10 0.05 0 D = 0.9 ZθJC, THERMAL IMPEDANCE (°C/W) 0.7 0.5 Note: PDM 0.3 SINGLE PULSE 0.1 0.05 10-5 10-4 t1 t2 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC t 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1.0 100 FMAX, OPERATING FREQUENCY (kHz) 50 RC MODEL Junction temp. (°C) 0.0998 Power (watts) 0.181 Case temperature. (°C) 0.153 0.00438 F 10 5 T = 125°C J T = 75°C C D = 50 % V = 400V CE R = 1.0Ω G = min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf max fmax2 = Pdiss = Pdiss - Pcond Eon2 + Eoff TJ - TC RθJC FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL 30 50 70 90 110 130 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current 1 10 050-7620 Rev B 10-2005 APT75GN60LDQ3(G) APT75DQ60 10% td(on) Gate Voltage TJ = 125°C V CC IC V CE tr Collector Current 5% 5% Collector Voltage