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APM9435 Datasheet

P-Channel Enhancement Mode MOSFET


APM9435 Datasheet Preview


APM9435
P-Channel Enhancement Mode MOSFET
Features
Pin Description
-30V/-4.6A, RDS(ON) = 52m(typ.) @ VGS = -10V
RDS(ON) = 80m(typ.) @ VGS = -4.5V
Super High Density Cell Design
Reliable and Rugged
SO-8 Package
Applications
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
S1
S2
S3
G4
8D
7D
6D
5D
SO 8
S SS
G
Ordering and Marking Information
DD DD
P-Channel MOSFET
APM 9435
APM 9435
H a n d lin g C o d e
Temp. Range
Package Code
APM 9435
XXXXX
Package Code
K : SO -8
O peration Junction Tem p. R ange
C : -55 to 150°C
H andling C ode
TU : Tube
TR : Tape & Reel
XXX XX - D ate Code
Absolute Maximum Ratings
(T
A
=
25°C
unless
otherwise
noted)
Symbol
VDSS
VGSS
ID
IDM
Parameter
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current – Continuous TA = 25°C
Maximum Drain Current – Pulsed
Rating
-30
±25
-4.6
-20
Unit
V
A
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.4 - Mar., 2003
1
www.anpec.com.tw
Page 1

APM9435
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
PD
TJ)TSTG
RθJA
Parameter
Maximum Power Dissipation
TA = 25°C
TA = 100°C
Maximum Operating and Storage Junction Temperature
Thermal Resistance - Junction to Ambient
Rating
2.5
1.0
-55 to 150
50
Unit
W
°C
°C/W
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
Static
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250µA
IDSS Zero Gate Voltage Drain Current VDS=24V, VGS=0V
VGS(th) Gate Threshold Voltage
VDS=VGS, ID=250µA
IGSS Gate Leakage Current
VGS=±25V, VDS =0V
VGS=-10V, ID=-4.6A
RDS(ON)
Drain-Source On-state Resistance b
VGS=-4.5V, ID=-2A
VSD Diode Forward Voltage b
ISD=-3A, VGS=0V
Dynamica
Qg
Qgs
Qgd
td(ON)
tr
td(OFF)
tf
Ciss
Coss
Crss
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=-15V, VGS=-10V,
ID=-4.6A
VDD=-25V, RL=12.5,
ID=-2A , VGEN=-10V,
RG=6,
VGS=0V, VDS=-25V
Frequency = 1.0MHZ
Notes
a : Guaranteed by design, not subject to production testing
b : Pulse test ; pulse width 300µs, duty cycle 2%
APM9435
Min. Typa. Max.
Unit
-30 V
-1 uA
-1 -3 V
±100 nA
52 60
m
80 95
-0.6 -1.3 V
22.5
4.5
2
8
8
35
11
845
120
80
29
17
18
60
28
nC
ns
pF
Copyright ANPEC Electronics Corp.
Rev. A.4 - Mar., 2003
2
www.anpec.com.tw
Page 2

APM9435
Typical Characteristics
Output Characteristics
20
-VGS=5,6,7,8,9,10V
-VGS=4V
15
10
-VGS=3V
5
0
0 2 4 6 8 10
-VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
20
15
10
TJ=25°C
5
TJ=125°C
TJ=-55°C
0
012345
-VGS - Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.50
-IDS=250µA
1.25
1.00
0.75
0.50
0.25
0.00
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
On-Resistance vs. Drain Current
0.16
0.14
0.12
0.10
0.08
0.06
-VGS=4.5V
-VGS=10V
0.04
0.02
0.00
0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0
-ID - Drain Current (A)
Copyright ANPEC Electronics Corp.
Rev. A.4 - Mar., 2003
3
www.anpec.com.tw
Page 3
Part Number APM9435
Manufactur Etc
Description P-Channel Enhancement Mode MOSFET
Total Page 9 Pages
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