N-CHANNEL ENHANCEMENT MODE POWER MOSFET

www.DataSheet4U.com AP9T18GH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Capable of 2.5V gate drive ▼ Surface mount package ▼ RoHS Compliant N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 20V 14mΩ 38A G S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. GD S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 4.5V Continuous Drain Current, V GS @ 4.5V Pulsed Drain Current 1 Rating 20 ±16 38 24 140 31.3 0.25 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4 110 Units ℃/W ℃/W Data and specifications subject to change without notice 200908052-1/4 www.DataSheet4U.com AP9T18GH/J Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 20 0.5 Typ. 0.1 33 16 3 9 12 80 22 12 280 220 1.54 Max. Units 14 28 1.5 1 25 ±100 25 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω o Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VGS=4.5V, ID=18A VGS=2.5V, ID=9A VDS=VGS, ID=250uA VDS=5V, ID=18A VDS=20V, VGS=0V VDS=16V ,VGS=0V VGS=±16V ID=18A VDS=16V VGS=4.5V VDS=10V ID=18A RG=3.3Ω,VGS=5V RD=0.56Ω VGS=0V VDS=20V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 1115 1790 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions IS=18A, VGS=0V IS=18A, VGS=0V, dI/dt=100A/µs Min. - Typ. 19 11 Max. Units 1.3 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. 2/4 www.DataSheet4U.com AP9T18GH/J 120 90 100 T C =25 C o 5.0V 4.5V ID , Drain Current (A) 80 T C =25 C o 5.0V 4.5V 70 ID , Drain Current (A) 80 60 3.5V 60 3.5V 50 40 40 30 2.5V 20 2.5V 20 V G =1.5V V G =1.5V 10 0 0 1 2 3 4 0 1 2 3 0 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 26 1.6 I D =9A 22 1.4 T C =25 o C Normalized RDS(ON) 1.2 I D =18A V G =4.5V RDS(ON) (mΩ ) 18 1.0 14 0.8 10 0 2 4 6 8 10 0.6 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2 10 8 1.5 6 T j =150 o C 4 T j =25 o C Normalized VGS(th) (V) IS(A) 1 0.5 2 0 0 0.2 0.4 0.6 0.8 1 1.2 0 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 www.DataSheet4U.com AP9T18GH/J 12 10000 f=1.0MHz VGS , Gate to Source Voltage (V) I D =18A 10 8 V DS =10V V DS =12V V DS =16V C (pF) 1000 6 C iss 4 2 C oss C rss 0 0 5 10 15 20 25 30 35 100 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 1 Normalized Thermal Response (Rthjc) Duty factor=0.5 100 0.2 100us ID (A) 0.1 0.1 0.05 1ms 10 PDM 0.02 0.01 t T Duty factor = t/T Peak Tj = PDM x Rthjc + T C 10ms 100ms DC 1 0.1 1 10 100 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off)tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4/4