N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

www.DataSheet4U.com AP4563GH Pb Free Plating Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement D1/D2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 40V 30mΩ 30A -40V 36mΩ -27A ▼ Good Thermal Performance ▼ Fast Switching Performance ▼ RoHS Compliant S1 G1 S2 P-CH G2 Description S1 TO-252-4L The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. G1 D2 G2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 40 ±20 30 19 100 39 0.31 -55 to 150 -55 to 150 P-channel -40 ±20 -27 -17 -100 -41.7 -0.34 Units V V A A A W W/℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c (N-CH) Rthj-c (P-CH) Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-case 3 3 3 Value Max. Max. Max. 3.2 3 110 Units ℃/W ℃/W ℃/W Thermal Resistance Junction-ambient Data and specifications subject to change without notice 200617051-1/7 www.DataSheet4U.com AP4563GH N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 40 1 - Typ. 0.04 22 10 4 5 10 5 23 7 170 95 1.8 Max. Units 30 40 3 1 25 ±100 16 2.7 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Static Drain-Source On-Resistance 2 VGS=10V, ID=20A VGS=4.5V, ID=15A VDS=VGS, ID=250uA VDS=10V, ID=20A Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=40V, VGS=0V VDS=32V, VGS=0V VGS=±20V ID=20A VDS=30V VGS=4.5V VDS=20V ID=1A RG=3.3Ω,VGS=10V RD=20Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 1100 1760 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=20A, VGS=0V IS=20A, VGS=0V dI/dt=100A/µs Min. - Typ. 26 17 Max. Units 1.3 V ns nC Reverse Recovery Time Reverse Recovery Charge 2/7 www.DataSheet4U.com AP4563GH P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=150 C) o o Test Conditions VGS=0V, ID=-250uA 2 Min. -40 -1 - Typ. -0.03 19 18 4 11 12 6 68 36 250 200 8.5 Max. Units 36 48 -3 -1 -25 ±100 30 13 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coefficient Reference to 25℃,ID=-1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg VGS=-10V, ID=-18A VGS=-4.5V, ID=-13A VDS=VGS, ID=-250uA VDS=-10V, ID=-18A VDS=-40V, VGS=0V VDS=-32V, VGS=0V VGS=±20V ID=-18A VDS=-30V VGS=-4.5V VDS=-20V ID=-1A RG=3.3Ω,VGS=-10V RD=20Ω VGS=0V VDS=-25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 1570 2500 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=-18A, VGS=0V IS=-18A, VGS=0V dI/dt=-100A/µs Min. - Typ. 33 26 Max. Units -1.3 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.N-CH , P-CH are same . 3/7 www.DataSheet4U.com AP4563GH N-Channel 80 80 T C = 25 C o 10V 7.0V 60 T C =150 o C ID , Drain Current (A) 10V 7.0V 60 ID , Drain Current (A) 5.0V 40 40 5.0V 4.5V 4.5V 20 20 V G =3.0V 0 0 2 4 6 8 10 0 0 2 4 6 V G =3.0V 8 10 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 80 1.8 I D = 15 A T C =25 o C 60 I D =20A V G =10V Normalized RDS(ON) 1.4 RDS(ON) (mΩ ) 40 1.0 -6.3 -5 20 0.6 2 4 6 8 10 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.5 10 Normalized VGS(th) (V) 8 1.1 6 IS(A) T j =150 o C 4 T j =25 o C 0.7 2 0 0 0.2 0.4 0.6 0.8 1 1.2 0.3 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 4/7 www.DataSheet4U.com AP4563GH N-Channel f=1.0MHz 12 10000 VGS , Gate to Source Voltage (V) 9 I D = 20 A V DS = 30 V 1000 C iss 6 C (pF) C oss 100 C rss 3 0 0 5 10 15 20 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthjc) Duty factor=0.5 0.2 ID (A) 0.1 10 0.1 0.05 1ms T C =25 C Single Pulse 1 0.1 1 10 100 1000 PDM 0.02 t T o 10ms 100ms 1s DC 0.01 Single Pulse Duty factor = t/T Peak Tj = PDM x Rthjc + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 50 V DS =5V 40 VG QG ID , Drain Current (A) 30 T j =25 o C T j =150 o C 4.5V QGS QGD 20 10 Charge 0 0 2 4 6 8 Q V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 5/7 www.DataSheet4U.com AP4563GH P-Channel 80 80 T C = 25 o C -ID , Drain Current (A) 60 -10V -7.0V -ID , Drain Current (A) 60 T C =150 C o -10V -7.0V -5.0V -4.5V 40 -5.0V 40 -4.5V 20 V G = - 3.0V 20 V G = - 3.0V 0 0 2 4 6 8 10 0 0 2 4 6 8 10 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 1.8 I D = -13 A 80 T C =25 C 1.4 o I D = -18 A V G = - 10V Normalized RDS(ON) RDS(ON) (mΩ) 60 1.0 40 20 0.6 2 4 6 8 10 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.5 6 Normalized -VGS(th) (V) 1.2 4 1.1 -IS(A) T j =150 o C 2 T j =25 C o 0.7 0 0 0.2 0.4 0.6 0.8 1 0.3 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 6/7 www.DataSheet4U.com AP4563GH P-Channel f=1.0MHz 12 10000 -VGS , Gate to Source Voltage (V) I D =-18A V DS =-30V 9 6 C (pF) C iss 1000 3 C oss C rss 0 0 10 20 30 40 100 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthjc) Duty factor=0.5 0.2 -ID (A) 0.1 10 0.1 0.05 PDM 0.02 T C =25 C Single Pulse o 1ms 10ms 100ms 1s DC 10 100 1000 t T 0.01 Single Pulse Duty factor = t/T Peak Tj = PDM x Rthjc + T C 1 0.1 1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 50 V DS =-5V 40 VG QG -4.5V QGS QGD -ID , Drain Current (A) T j =25 C 30 o T j =150 C o 20 10 Charge 0 0 2 4 6 8 Q -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 7/7