N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

www.DataSheet4U.com AP4525GEH Pb Free Plating Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Good Thermal Performance ▼ Fast Switching Performance S1 D1/D2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) ID 40V 28mΩ 15A -40V 42mΩ -12A ▼ RoHS Compliant G1 S2 G2 P-CH BVDSS TO-252-4L RDS(ON) ID Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. D1 G1 G2 D2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating N-channel 40 ±16 15.0 12.0 50 10.4 0.083 -55 to 150 -55 to 150 P-channel -40 ±16 -12.0 -10.0 -50 Units V V A A A W W/℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 12 110 Unit ℃/W ℃/W Data and specifications subject to change without notice 200725064-1/7 www.DataSheet4U.com AP4525GEH N-CH Electrical Characteristics@ Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA Min. 40 1 - Typ. 0.03 6 9 1.5 4 7 20 20 4 580 100 70 2 Max. Units 28 32 3 1 25 ±30 14 930 3 V V/℃ mΩ mΩ V S uA uA uA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) VGS=10V, ID=6A VGS=4.5V, ID=4A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70oC) o VDS=VGS, ID=250uA VDS=10V, ID=6A VDS=40V, VGS=0V VDS=32V, VGS=0V VGS=±16V ID=6A VDS=20V VGS=4.5V VDS=20V ID=6A RG=3Ω,VGS=10V RD=3.3Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=15A, VGS=0V IS=6A, VGS=0V dI/dt=100A/µs Min. - Typ. 20 15 Max. Units 1.8 V ns nC Reverse Recovery Time Reverse Recovery Charge 2/7 www.DataSheet4U.com AP4525GEH P-CH Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=70 C) o o Test Conditions VGS=0V, ID=-250uA 2 Min. -40 -0.8 - Typ. -0.03 5 9 2 5 8.5 15 27 25 770 165 115 6 Max. Units 42 60 -2.5 -1 -25 ±30 24 1230 9 V V/℃ mΩ mΩ V S uA uA uA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coefficient Reference to 25℃,ID=-1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg VGS=-10V, ID=-5A VGS=-4.5V, ID=-3A VDS=VGS, ID=-250uA VDS=-10V, ID=-5A VDS=-40V, VGS=0V VDS=-32V, VGS=0V VGS=±16V ID=-5A VDS=-20V VGS=-4.5V VDS=-20V ID=-5A RG=3Ω,VGS=-10V RD=4Ω VGS=0V VDS=-20V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=-12A, VGS=0V IS=-5A, VGS=0V dI/dt=-100A/µs Min. - Typ. 20 16 Max. Units -1.8 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.N-CH , P-CH are same . 3/7 www.DataSheet4U.com AP4525GEH N-Channel 50 50 40 T A = 25 C o ID , Drain Current (A) ID , Drain Current (A) 10V 7.0V 5.0V 4.5V 40 T A = 150 C o 10V 7.0V 5.0V 4.5V 30 30 20 20 V G =3.0V 10 V G =3.0V 10 0 0 1 2 3 4 5 6 0 0 1 2 3 4 5 6 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 120 ID=4A 100 T A =25 o C Normalized RDS(ON) 1.6 ID=6A V G =10V RDS(ON) (mΩ ) 80 60 1.2 40 20 2 4 6 8 10 0.8 25 50 75 100 125 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 14 12 10 Normalized VGS(th) (V) T j =150 o C IS(A) 8 T j =25 o C 1.2 6 0.8 4 2 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0.4 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 4/7 www.DataSheet4U.com AP4525GEH N-Channel f=1.0MHz 12 1000 VGS , Gate to Source Voltage (V) I D =6A V DS =20V 8 C iss C (pF) 100 C oss C rss 4 0 0 5 10 15 20 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthjc) Duty factor=0.5 0.2 10 ID (A) 0.1 100us 0.1 0.05 PDM 0.02 1 T A =25 o C Single Pulse 0.1 0.1 1 10 1ms 10ms 100ms 1s DC 100 t T Duty factor = t/T Peak Tj = PDM x Rthjc + TC 0.01 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 50 VG V DS =5V 40 ID , Drain Current (A) T j =25 o C 30 T j =150 o C QG 4.5V QGS QGD 20 10 Charge 0 0 2 4 6 8 Q V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 5/7 www.DataSheet4U.com AP4525GEH P-Channel 50 50 T A = 25 C 40 o -ID , Drain Current (A) -10V -7.0V -5.0V -4.5V -ID , Drain Current (A) 40 T A = 150 C o -10V -7.0V -5.0V -4.5V 30 30 20 V G = - 3.0V 20 V G = - 3.0V 10 10 0 0 1 2 3 4 5 6 0 0 2 4 6 8 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 200 1.6 I D = -3 A 170 T A =25 o C 1.4 I D = -5A V G = -10V RDS(ON) (mΩ) Normalized RDS(ON) 140 110 1.2 80 1.0 50 20 2 4 6 8 10 0.8 25 50 75 100 125 150 -V GS ,Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 12 10 Normalized -VGS(th) (V) 1.3 1.5 1.2 8 -IS(A) 6 T j =150 C 4 o T j =25 C o 0.8 2 0 0.1 0.3 0.5 0.7 0.9 1.1 0.4 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 6/7 www.DataSheet4U.com AP4525GEH P-Channel 12 10000 f=1.0MHz -VGS , Gate to Source Voltage (V) I D = -5 A V DS = - 2 0 V 8 1000 C iss C (pF) 4 100 C oss C rss 0 0 4 8 12 16 20 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Duty factor=0.5 Normalized Thermal Response (Rthjc) 0.2 10 -ID (A) 100us 0.1 0.1 0.05 1ms 1 PDM 0.02 t T Duty factor = t/T Peak Tj = PDM x Rthjc + T C T c =25 C Single Pulse 0.1 0.1 1 10 o 10ms 100ms 1s DC 100 0.01 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 50 V DS =-5V 40 VG T j =25 C o -ID , Drain Current (A) T j =150 C o QG -4.5V QGS QGD 30 20 10 Charge 0 0 2 4 6 8 Q -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 7/7