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AP4501SSD
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching
D1 D1 D2 D2
N with Schottky AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
N-CH BVDSS RDS(ON) ID
G2
30V 36mΩ 5.3A -30V 60mΩ -4.2A
K
PDIP-8
G1 S1/A
S2
P-CH BVDSS RDS(ON) ID
D1
Description
The Advanced Power MOSFETs from APEC provide the design with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. AP4501SSD included N , P channel enhancement mode power MOSFET and Shottky diode.
G1
D2
G2 S1 A S2
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating N-channel 30 ±20 5.3 4.3 40 2 0.016 -55 to 150 -55 to 125 P-channel -30 ±20 -4.2 -3.5 -30
Units V V A A A W W/℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient
3
Value Max. 62.5
Unit ℃/W
Data and specifications subject to change without notice
200221031
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AP4501SSD
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
2
Test Conditions VGS=0V, ID=250uA
Min. 30 1 -
Typ. 0.031
Max. Units 36 55 3 100 1 ±100 V V/℃ mΩ mΩ V S uA mA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=5.3A VGS=4.5V, ID=4A
10 8.2 2.3 4.8 6 5.2 18.8 4.4 645 150 95
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)4 Drain-Source Leakage Current (Tj=70 C)
o
VDS=VGS, ID=250uA VDS=10V, ID=5.3A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=±20V ID=5.3A VDS=24V VGS=4.5V VDS=15V ID=1A RG=3.3Ω,VGS=10V RD=15Ω VGS=0V VDS=25V f=1.0MHz
Gate-Source Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
Source-Drain Diode
Symbol IS VSD Parameter
Source Current ( Body Diode )
2
Test Conditions VD=VG=0V , VS=1.2V IS=1.7A, VGS=0V
Min. -
Typ. -
Max. Units 1.7 1.2 A V
Forward On Voltage
2
Schottky Characteristics@Tj=25℃ ℃
Symbol VF Irm Parameter Forward Voltage Drop
Maximum Reverse Leakage Current
Test Conditions IF=1A Vr=30V
Min. -
Typ. -
Max. Units 0.5 100 V uA
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AP4501SSD
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current ( T=25 C) j Drain-Source Leakage Current ( T=70 C) j
o o
Test Conditions VGS=0V, ID=-250uA
2
Min. -30 -1 -
Typ. -0.03
Max. Units 60 80 -3 -1 -25 ±100 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
VGS=-10V, ID=-4.2A VGS=-4.5V, ID=-3A VDS=VGS, ID=-250uA VDS=-10V, ID=-4.2A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS= ± 20V ID=-4.2A VDS=-15V VGS=-4.5V VDS=-15V ID=-1A RG=6Ω,VGS=-10V RD=15Ω VGS=0V VDS=-25V f=1.0MHz
7.2 9 3.5 2 12 20 45 27 760 330 90
Gate-Source Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
Source-Drain Diode
Symbol IS VSD Parameter
Source Current ( Body Diode )
2
Test Conditions VD=VG=0V , VS=-1.2V IS=-1.7A, VGS=0V
Min. -
Typ. -
Max. Units -1.7 -1.2 A V
Forward On Voltage
2
Notes:
1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Mounted on 1 in2 copper pad of FR4 board ; 90℃/W when mounted on Min. copper pad. 4.IDSS is the leakage current measurement combined with Schottky diode.
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AP4501SSD
N-Channel
40
36
T A =25 o C
30
ID , Drain Current (A)
ID , Drain Current (A)
10V 8.0V 6.0V 5.0V
T A =150 o C
10V 8.0V 6.0V 5.0V
24
20
12
10
V GS =4. 0 V
V GS =4.0V
0 0 1 2 3 4
0 0 2 3 5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2
I D =5.3A T A =25 ℃
70
I D= 5 . 3 A V GS = 10V Normalized RDS(ON)
1.4
RDS(ON) (mΩ )
40
0.8
10 2 5 8 11
0.2 -50 0 50 100 150
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
3
100
2.5
10
2
VGS(th) (V)
T A =150 o C IS(A)
1
T A =25 C
o
1.5
1
0.1
0.5
0.01 0 0.4 0.8 1.2
0 -50 0 50 100 150
V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature ( o C )
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
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AP4501SSD
N-Channel
f=1.0MHz
12
10000
I D =5.3A VGS , Gate to Source Voltage (V)
9
V V V
DS =16V DS =20V DS =24V
1000
Ciss C (pF)
6
100
Coss Crss
3
0 0 4 8 12 16
10 1 7 13 19 25 31
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty Factor = 0.5 0.2
Normalized Thermal Response (Rthja)
100us
10
0.1
1ms ID (A) 10ms
1
0.1
0.05
0.02
100ms 1s 10s DC
0.01
PDM 0.01
Single Pulse
t T
Duty Factor = t/T Peak Tj = PDM x Rthja + Ta Rthja =90 C/W
o
0.1
T A =25 C Single Pulse
0.01 0.1 1 10
o
0.001 0.0001 0.001 0.01 0.1 1 10 100 1000
100
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
RD VDS D
TO THE OSCILLOSCOPE
D
VDS
TO THE OSCILLOSCOPE 0.5 x RATED V DS
0.8 x RATED V DS
G S VGS
RG + 10V -
G
S VGS
+
1~ 3 mA
I
G
I
D
Fig 11. Switching Time Circuit
Fig 12. Gate Charge Circuit
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AP4501SSD
P-Channel
40 36
T A =25 C
30
o
-10V -8.0V -ID , Drain Current (A) -6.0V
T A =150 o C
-10V -8.0V -6.0V
-ID , Drain Current (A)
24
20
-5.0V
-5.0V
12
10
V GS = - 4. 0 V
V GS = - 4. 0 V
0 0 1 2 3 4
0 0 1 2 3 4 5
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
120
1.8
I D =-4.2A T A =25 ℃
1.6
I D =-4.2A V GS = -10V
90
Normalized RDS(ON)
3 5 7 9 11
1.4
RDS(ON) (mΩ )
1.2
60
1
0.8
30
0.6 -50 0 50 100 150
-V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
3
100
2.5
10
2
-IS(A)
1
T A =150 o C
T A =25 o C
-VGS(th) (V)
1.5
1
0.1
0.5
0.01 0.1 0.4 0.7 1 1.3
0 -50
-V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature ( o C )
0
50
100
150
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
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AP4501SSD
P-Channel
14 10000
f=1.0MHz
-VGS , Gate to Source Voltage (V)
12
I D =-4.2A V DS =-10V V DS =-15V V DS =-20V
1000
10
C (pF)
8
Ciss Coss
100
6
4
Crss
2
0 0 5 10 15 20 25 30
10 1 5 9 13 17 21 25 29
Q G , Total Gate Charge (nC)
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty Factor = 0.5
0.2
100us
10
Normalized Thermal Response (Rthja)
0.1
1ms -ID (A)
1
0.1
0.05
10ms 100ms
0.02
0.01
PDM 0.01
Single Pulse
t T
Duty Factor = t/T Peak Tj = PDM x Rthja + T a Rthja=90 oC/W
0.1
T A =25 o C Single Pulse
0.01 0.1
1s 10s DC
0.001
-V DS , Drain-to-Source Voltage (V)
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
RD VDS
TO THE
D D VDS
TO THE OSCILLOSCOPE 0.5 x RATED VDS
OSCILLOSCOPE 0.5 x RATED VDS
G S VGS
RG
G
S -10 V VGS -1~-3mA I
G
I
D
Fig 11. Switching Time Circuit
Fig 12. Gate Charge Circuit
