N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

www.DataSheet4U.com AP4501GD Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Fast Switching Speed ▼ PDIP-8 Package ▼ RoHS Compliant PDIP-8 S1 S2 G1 D2 D1 D1 D2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) ID P-CH BVDSS RDS(ON) ID 30V 28mΩ 7A -30V 50mΩ -5.3A G2 Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G1 S1 D1 D2 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 30 ±20 7 5.8 20 2 0.016 -55 to 150 -55 to 150 P-channel -30 ±20 -5.3 -4.7 -20 Units V V A A A W W/℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit ℃/W Data and specifications subject to change without notice 200622051-1/7 www.DataSheet4U.com AP4501GD N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 Typ. 0.02 13 9 2 5 6 5 19 5 645 150 95 1.6 Max. Units 28 42 3 1 25 ±100 15 1030 2.5 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω o Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA Static Drain-Source On-Resistance 2 VGS=10V, ID=7A VGS=4.5V, ID=5A VDS=VGS, ID=250uA VDS=10V, ID=7A Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=±20V ID=7A VDS=24V VGS=4.5V VDS=15V ID=1A RG=3.3Ω,VGS=10V RD=15Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=1.7A, VGS=0V IS=7A, VGS=0V, dI/dt=100A/µs Min. - Typ. 16 10 Max. Units 1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge 2/7 www.DataSheet4U.com AP4501GD P-CH Electrical Characteristics@T j=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=-250uA VGS=-10V, I D=-5A VGS=-4.5V, I D=-3A Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (T oC) j=25 Drain-Source Leakage Current (T oC) j=70 Min. -30 -1 - Typ. -0.03 9 9 2 5 10 7 27 16 460 180 130 9 Max. Units 50 90 -3 -1 -25 ±100 15 730 14 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coefficient Reference to 25 ℃, ID=-1mA VDS=VGS, ID=-250uA VDS=-10V, I D=-5A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS=±20V ID=-5A VDS=-24V VGS=-4.5V VDS=-15V ID=-1A RG=6Ω,VGS=-10V RD=15Ω VGS=0V VDS=-25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=-1.7A, V GS=0V IS=-5A, VGS=0V, dI/dt=100A/µs Min. - Typ. 21 18 Max. Units -1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in 2 copper pad of FR4 board , t <10sec ; 90℃/W when mounted on min. copper pad. 3/7 www.DataSheet4U.com AP4501GD N-Channel 36 36 T A =25 o C ID , Drain Current (A) 24 ID , Drain Current (A) 10V 8.0V 6.0V 5.0V V G = 4.5 V T A =150 o C 10V 8.0V 6.0V 5.0V V G = 4.5 V 24 12 12 0 0 2 4 6 0 0 2 4 6 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 80 2.0 ID=5A T A =25 ℃ 60 I D =7A V G = 10V Normalized RDS(ON) 1.4 RDS(ON) (mΩ ) 40 0.8 20 2 4 6 8 10 0.2 -50 0 50 100 150 V GS ,Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.5 10 1 Normalized VGS(th) (V) 1.2 IS(A) T J =150 C o T J =25 o C 0.1 0.9 0.01 0 0.4 0.8 1.2 0.6 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 4/7 www.DataSheet4U.com AP4501GD N-Channel f=1.0MHz 12 1000 I D =7A VGS , Gate to Source Voltage (V) V DS =16V V DS =20V V DS =24V C (pF) 100 C iss 9 C oss C rss 6 3 0 0 4 8 12 16 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthja) Duty factor=0.5 10 100us 1ms 0.2 ID (A) 1 0.1 10ms 100ms 1s 0.1 0.05 PDM t T 0.02 0.1 T A =25 C Single Pulse o DC 0.01 Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja =90 C/W Single Pulse o 0.01 0.1 1 10 100 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Q Charge Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 5/7 www.DataSheet4U.com AP4501GD P-Channel 20 20 T A =25 C -ID , Drain Current (A) 15 o -ID , Drain Current (A) -10V -8.0V -6.0V V G = - 4. 0 V T A =150 C 15 o -10V -8.0V -6.0V V G = - 4. 0 V 10 10 5 5 0 0 1 2 3 4 0 0 1 2 3 4 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 240 1.8 I D =- 3 A T A =25 ℃ 190 I D =-5A V G = -10V Normalized RDS(ON) 1.4 RDS(ON) (mΩ) 140 1 90 40 2 4 6 8 10 0.6 -50 0 50 100 150 -V GS ,Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 100.00 10.00 Normalized -VGS(th) (V) 1.1 -IS(A) 1.00 T j =150 C o T j =25 C o 0.8 0.10 0.01 0.1 0.4 0.7 1 1.3 0.5 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 6/7 www.DataSheet4U.com AP4501GD P-Channel 12 1000 f=1.0MHz -VGS , Gate to Source Voltage (V) 10 I D =-5A V DS =-24V C iss C (pF) 8 6 4 C oss 2 C rss 0 0 4 8 12 16 100 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthja) Duty factor=0.5 10 100us 1ms 0.2 -ID (A) 1 10ms 100ms 1s T A =25 o C Single Pulse DC 0.1 0.1 0.05 PDM t T 0.02 0.1 0.01 Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja=90 oC/W Single Pulse 0.01 0.1 1 10 100 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG -4.5V QGS QGD 10% VGS td(on) tr td(off)tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 7/7