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AP4500GM
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching
D1 G2 S2 D2 D1 D2
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
N-CH BVDSS RDS(ON) ID P-CH BVDSS RDS(ON) ID
20V 30mΩ 6A -20V 50mΩ -5A
SO-8
S1
G1
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.
G1
D1
D2
G2 S1 S2
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating N-channel 20 ±12 6 4.8 20 2.0 0.016 -55 to 150 -55 to 150 P-channel -20 ±12 -5 -4 -20
Units V V A A A W W/℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Thermal Resistance Junction-ambient
3
Value Max. 62.5
Unit ℃/W
Data and specifications subject to change without notice
200609031
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AP4500GM
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
2
Test Conditions VGS=0V, ID=250uA
Min. Typ. Max. Units 20 0.5 0.037
30 45 1.2 1 25 15 480 -
V V/℃ mΩ mΩ V S uA uA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=6A VGS=2.5V, ID=5.2A
18.5 9 1.8 4.2 29 65 60 50 300 255 115
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70oC)
o
VDS=VGS, ID=250uA VDS=10V, ID=6A VDS=20V, VGS=0V VDS=16V, VGS=0V VGS=±12V ID=6A VDS=10V VGS=4.5V VDS=10V ID=1A RG=6Ω,VGS=4.5V RD=10Ω VGS=0V VDS=8V f=1.0MHz
Gate-Source Leakage Total Gate Charge
2
±100 nA
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
Source-Drain Diode
Symbol VSD trr Qrr Parameter Forward On Voltage
2
Test Conditions IS=1.7A, VGS=0V IS=6A, VGS=0V, dI/dt=100A/µs
Min. Typ. Max. Units 26 17 1.2 V ns nC
Reverse Recovery Time Reverse Recovery Charge
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AP4500GM
P-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
o
Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=70 C)
o o
Test Conditions VGS=0V, ID=250uA
2
Min. Typ. Max. Units -20 -0.5 -0.037
50 90 -1 -1 -25 20 -
V V/℃ mΩ mΩ V S uA uA nC nC nC ns ns ns ns pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
VGS=-4.5V, ID=-2.2A VGS=-2.5V, ID=-1.8A VDS=VGS, ID=-250uA VDS=-10V, ID=-2.2A VDS=-20V, VGS=0V VDS=-16V, VGS=0V VGS= ± 12V ID=-5A VDS=-16V VGS=-4.5V VDS=-10V ID=-2.2A RG=6Ω,VGS=-10V RD=4.5Ω VGS=0V VDS=-20V f=1.0MHz
2.5 14 2 5.6 10 11 58 38 400 160
Gate-Source Leakage Total Gate Charge
2
±100 nA
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
940 1500 pF
Source-Drain Diode
Symbol VSD trr Qrr Parameter Forward On Voltage
2
Test Conditions IS=-1.8A, VGS=0V IS=-2.2A, VGS=0V, dI/dt=100A/µs
Min. Typ. Max. Units 25 21 -1.2 V ns nC
Reverse Recovery Time Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 135℃/W when mounted on Min. copper pad.
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AP4500GM
N-Channel
25
25
T A =25 o C ID , Drain Current (A)
20
ID , Drain Current (A)
4.5V 3.5V 3.0V 2.5V
T A =150 o C
20
4.5V 3.5V 3.0V 2.5V
15
15
10
10
V GS =2.0V
5
V GS =2.0V
5
0 0 1 2 3 4 5
0
0
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
45
1.8
40
I D =6A T A =25 o C Normalized RDS(ON)
1.6
I D =6A V GS =4.5V
1.4
RDS(ON) (mΩ )
35
1.2
30
1.0
25
0.8
20 2 3 4 5
0.6
-50
0
50
100
150
V GS (V)
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
1.5
100.00
10.00
1
1.00
T j =150 o C
T j =25 o C
VGS(th) (V)
0.5 0 -50
IS(A)
0.10
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
0
50
100
150
V SD (V)
T j ,Junction Temperature ( o C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
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AP4500GM
N-Channel
f=1.0MHz
6
1000
5
VGS , Gate to Source Voltage (V)
I D =6A V DS =10V
4
Ciss C (pF)
Coss
100
3
2
Crss
1
0
10 0 2 4 6 8 10 12
1 5 9 13 17 21 25 29
Q G , Total Gate Charge (nC)
V DS (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (Rthja)
Duty Factor = 0.5
10
0.2
1ms ID (A) 10ms
1
0.1 0.1
0.05
100ms 1s
0.1
0.02 0.01
PDM
0.01
t T
Single Pulse
T A =25 C Single Pulse
o
10s DC
Duty factor = t/T Peak T j = P DM x R thja + Ta Rthja =135 C/W
o
0.01
0.001
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
V DS (V)
t , Pulse Width (s)
Fig9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS 90%
VG QG 4.5V QGS QGD
10% VGS td(on) tr td(off) tf Charge Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
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AP4500GM
P-Channel
25
25
T A =25 o C
20
-ID , Drain Current (A)
-ID , Drain Current (A)
4.5V 4.0V 3.5V 3.0V
T A =150 o C
20
4.5V 4.0V 3.5V 3.0V
15
15
10
V GS =2. 5 V
10
V GS =2. 5 V
5
5
0 0 1 2 3 4 5
0
0
1
2
3
4
5
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
1.8
90
I D =-2.2A T A =25 ℃ Normalized RDS(ON)
1.6
I D =-2.2A V GS = -4.5V
80
1.4
RDS(ON) (mΩ )
70
1.2
60
1
50
0.8
40
30
0.6 2 3 4 5
-50
0
50
100
150
-V GS (V)
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
1
100.00
0.8
10.00
1.00
T j =150 o C
T j =25 o C
-VGS(th) (V)
1.3 1.5
0.6
-IS(A)
0.4
0.10
0.2
0.01
0 0.1 0.3 0.5 0.7 0.9 1.1 -50 0 50 100 150
-V SD (V)
T j ,Junction Temperature (
o
C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
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AP4500GM
P-Channel
f=1.0MHz
6
10000
-VGS , Gate to Source Voltage (V)
5
I D =-5A V DS =-16V
1000
4
Ciss Coss Crss
3
C (pF)
100 10 1
2
1
0 0 4 8 12 16 20
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
-V DS (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty Factor = 0.5
10
1ms 10ms
Normalized Thermal Response (R thja)
0.2
0.1
0.1
-ID (A)
0.05
1
100ms 1s
0.02
0.01
PDM
0.01
t T
Single Pulse
0.1
T A =25 C Single Pulse
0.01
o
10s DC
Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja=135 oC/W
0.001 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000
-V DS (V)
t , Pulse Width (s)
Fig9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS 90%
VG QG -4.5V QGS QGD
10% VGS td(on) tr td(off) tf Charge Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
