PHOTOTRANSISTOR

PHOTOTRANSISTOR AP3216P3C Features MECHANICALLY AND SPECTRALLY MATCHED TO THE AP3216 SERIES INFRARED EMITTING LED LAMP. WATER CLEAR LENS. PACKAGE : 2000PCS / REEL. RoHS COMPLIANT. Description Made with NPN silicon phototransistor chips. Package Dimensions www.DataSheet4U.com Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.2(0.008") unless otherwise noted. 3. Specifications are subject to change without notice. SPEC NO: DSAB4397 APPROVED: J. Lu REV NO: V.4 CHECKED: Allen Liu DATE: MAR/02/2005 DRAWN: B.H.LI PAGE: 1 OF 3 ERP: 1203000370 Electrical / Optical Characteristics at TA=25°C Symbol VBR CEO Parameter Collector-to-Emitter Breakdown Voltage Min. 30 Typ. Max. Units V Test Conditions IC=100uA Ee=0mW/cm2 IE=100uA Ee=0mW/cm2 IC=2mA Ee=20mW/cm2 VCE=10V Ee=0mW/cm2 VBR ECO Emitter-to-Collector Breakdown Voltage 5 - - V VCE (SAT) I CEO Collector-to-Emitter Saturation Voltage Collector Dark Current - - 0.8 100 V nA TR Rise Time (10％ to 90％ ) - 3 - us TF Fall Time (90％ to 10％ ) - 3 - us VCE = 5V IC=1mA RL=1000Ω VCE = 5V, Ee=1mW/cm2, λ=940nm - I (ON) On State Collector Current 0.1 0.3 - mA 2θ1/2 Viewing Angle - 120 - deg www.DataSheet4U.com Absolute Maximum Ratings at TA=25°C Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Power Dissipation at (or below) 25°C Free Air Temperature Operating Temperature Range Storage Temperature Range Max.Ratings 30V 5V 100mW -40°C ~ +85°C -40°C ~ +85°C SPEC NO: DSAB4397 APPROVED: J. Lu REV NO: V.4 CHECKED: Allen Liu DATE: MAR/02/2005 DRAWN: B.H.LI PAGE: 2 OF 3 ERP: 1203000370 AP3216P3C Recommended Soldering Pattern (Units : mm) www.DataSheet4U.com Tape Specifications (Units : mm) SPEC NO: DSAB4397 APPROVED: J. Lu REV NO: V.4 CHECKED: Allen Liu DATE: MAR/02/2005 DRAWN: B.H.LI PAGE: 3 OF 3 ERP: 1203000370