N-CHANNEL ENHANCEMENT MODE POWER MOSFET

www.DataSheet4U.com AP2761P-A Pb Free Plating Product Advanced Power Electronics Corp. ▼ Lower On-resistance ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ RoHS Compliant G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 650V 1Ω 10A Description The TO-220 package is universally preferred for all commercialindustrial applications. The device is suited for DC-DC ,AC-DC converters for power applications. G D S TO-220 Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 650 ±30 10 4.4 18 104 0.8 10 -55 to 150 -55 to 150 Units V V A A A W W/℃ A ℃ ℃ Total Power Dissipation Linear Derating Factor Avalanche Current Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 1.2 62 Units ℃/W ℃/W Data & specifications subject to change without notice 200705051-1/4 www.DataSheet4U.com AP2761P-A Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA Min. 650 2 - Typ. 0.6 4.5 53 10 15 16 20 82 36 320 8 Max. Units 1 4 10 100 ±100 85 V V/℃ Ω V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VGS=10V, ID=3.5A VDS=VGS, ID=250uA VDS=10V, ID=3.5A VDS=600V, VGS=0V VDS=480V, VGS=0V VGS=±30V ID=10A VDS=520V VGS=10V VDD=320V ID=10A RG=10Ω,VGS=10V RD=32Ω VGS=0V VDS=15V f=1.0MHz Gate-Source Leakage Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 3 2770 4430 Source-Drain Diode Symbol VSD trr Qrr Notes: 1.Pulse width limited by safe operating area. o 2.Starting Tj=25 C , VDD=50V , L=1.2mH , RG=25Ω , IAS=10A. Parameter Forward On Voltage 3 3 Test Conditions IS=10A, VGS=0V IS=10A, VGS=0V, dI/dt=100A/µs Min. - Typ. 610 8.64 Max. Units 1.5 V ns µC Reverse Recovery Time Reverse Recovery Charge 3.Pulse width <300us , duty cycle <2%. 2/4 www.DataSheet4U.com AP2761P-A 12 9 T C =25 o C ID , Drain Current (A) 9 10V 6.0V 5.5V ID , Drain Current (A) 6 T C =150 C o 10V 6.0V 5.5V 5.0V 6 5.0V 3 3 V G =4.0V V G =4.0V 0 0 5 10 15 20 25 0 0 10 20 30 40 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.2 2.4 I D =3.5A V G =10V 1.1 1.8 Normalized BVDSS (V) Normalized RDS(ON) 1 1.2 0.9 0.6 0.8 -50 0 50 100 150 0 -50 0 50 100 150 T j , Junction Temperature ( o C) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 5 100 10 4 1 T j = 150 C o T j = 25 o C VGS(th) (V) 1.1 1.3 IS (A) 3 0.1 2 0.01 0.1 0.3 0.5 0.7 0.9 1 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 www.DataSheet4U.com AP2761P-A f=1.0MHz 16 10000 VGS , Gate to Source Voltage (V) I D =10A 12 C iss V DS =330V V DS =410V V DS =520V C (pF) 8 100 C oss 4 C rss 0 0 20 40 60 80 1 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Duty factor=0.5 Normalized Thermal Response (Rthjc) 10 0.2 ID (A) 10us 100us 1 0.1 0.1 0.05 0.02 PDM 0.01 1ms T C =25 C Single Pulse o t T Single Pulse 10ms 100ms Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0 0.01 1 10 100 1000 10000 0.00001 0.0001 0.001 0.01 0.1 1 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4/4