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AP2761I-A
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simple Drive Requirement ▼ RoHS Compliant G S D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
650V 1.0Ω 10A
Description
AP2761 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. TO-220CFM type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast G D switching,ruggedized design and cost-effectiveness. S
TO-220CFM(I)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current
1
Rating 650 ±30 10 6.4 36 37 0.3 65 10 -55 to 150 -55 to 150
Units V V A A A W W/℃ mJ A ℃ ℃
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy2 Avalanche Current Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 3.4 65 Units ℃/W ℃/W
Data & specifications subject to change without notice
200706053-1/4
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AP2761I-A
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
o
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=1mA
Min. 650 2 -
Typ. 0.6 4.8 53 10 15 16 20 82 36 2770 320 8
Max. Units 1 4 10 100 ±100 V V/℃ Ω V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=150 C)
o
VGS=10V, ID=5A VDS=VGS, ID=250uA VDS=10V, ID=5A VDS=600V, VGS=0V VDS=480V, VGS=0V VGS=±30V ID=10A VDS=520V VGS=10V VDD=320V ID=10A RG=10Ω,VGS=10V RD=32Ω VGS=0V VDS=15V f=1.0MHz
Gate-Source Leakage Total Gate Charge
3
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
3
Source-Drain Diode
Symbol VSD trr Qrr Notes: 1.Pulse width limited by safe operating area. 2.Starting Tj=25 C , VDD=50V , L=1.2mH , RG=25Ω , IAS=10A. 3.Pulse width <300us , duty cycle <2%.
o
Parameter Forward On Voltage
3
Test Conditions IS=10A, VGS=0V IS=10A, VGS=0V, dI/dt=100A/µs
Min. -
Typ. 610 8.64
Max. Units 1.5 V ns µC
Reverse Recovery Time
Reverse Recovery Charge
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AP2761I-A
14
8
12
T C =25 C ID , Drain Current (A)
10
o
10V 6.0V ID , Drain Current (A)
T C =150 o C
6
10V 5.0V
8
4.5V
4
6
5.0V
4
2
V G =4.0V
2
V G =4.0V
0
0 0 5 10 15 20 25 0 5 10 15 20 25
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
2.8
2.4
I D =5A V G =10V
Normalized BVDSS (V)
1.1
Normalized RDS(ON)
2
1.6
1
1.2
0.8 0.9
0.4
0.8 -50 0 50 100 150
0 -50 0 50 100 150
T j , Junction Temperature ( C)
o
T j , Junction Temperature ( o C )
Fig 3. Normalized BVDSS v.s. Junction Temperature
100 5
Fig 4. Normalized On-Resistance v.s. Junction Temperature
4 10
IS (A)
1
VGS(th) (V)
T j = 150 C
o
T j = 25 C
o
3
2
0.1 1
0.01 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
0 -50 0 50 100 150
V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
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AP2761I-A
16
10000
f=1.0MHz
I D =10A VGS , Gate to Source Voltage (V) C iss
12
C (pF)
V DS =330V V DS =410V V DS =520V
8
C oss
100
4
C rss
0
0 10 20 30 40 50 60 70 80 1
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
10
Normalized Thermal Response (Rthjc)
0.2
ID (A)
1
1ms 10ms 100ms 1s DC
0.1
0.1
0.05
0.02
PDM
t
0.01
0.1
T
Duty factor = t/T Peak Tj = PDM x Rthjc + T C
T c =25 C Single Pulse
0.01 0.1 1 10 100
o
Single Pulse
0.01
1000
10000
0.00001
0.0001
0.001
0.01
0.1
1
10
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS 90%
VG QG 10V QGS QGD
10% VGS td(on) tr td(off) t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
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