N-CHANNEL ENHANCEMENT MODE POWER MOSFET

www.DataSheet4U.com AP2732GK Pb Free Plating Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ RoHS Compliant SOT-223 G D D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) S 30V 26mΩ 8.6A ID Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 ±20 8.6 6.8 30 2.7 0.02 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 45 Unit ℃/W Data and specifications subject to change without notice 200526051-1/4 www.DataSheet4U.com AP2732GK Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o Test Conditions VGS=0V, ID=250uA Min. 30 1 - Typ. 0.03 11 9 2 5 8 6 18 5 600 150 110 1.7 Max. Units 26 40 3 1 25 ±100 15 960 2.6 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg VGS=10V, ID=8A VGS=4.5V, ID=5A VDS=VGS, ID=250uA VDS=10V, ID=8A VDS=30V, VGS=0V VDS=24V ,VGS=0V VGS=±20V ID=8A VDS=25V VGS=4.5V VDS=15V ID=1A RG=3.3Ω,VGS=5V RD=15Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions IS=2.1A, VGS=0V IS=8A, VGS=0V, dI/dt=100A/µs Min. - Typ. 19 10 Max. Units 1.3 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in 2 copper pad of FR4 board, t <10sec ; 120 ℃/W when mounted on Min. copper pad. 2/4 www.DataSheet4U.com AP2732GK 40 40 T A =25 C 30 o ID , Drain Current (A) ID , Drain Current (A) 10V 7.0V 5.0V 4.5V T A =150 o C 30 10V 7.0V 5.0V 4.5V 20 20 10 10 V G =3.0V V G =3.0V 0 0 1 2 3 4 5 0 0 1 2 3 4 5 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 75 1.8 ID=5A T A =25 o C Normalized RDS(ON) RDS(ON) (mΩ) 55 1.4 ID=8A V G =10V 35 1.0 20 15 2 4 6 8 10 0.6 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.8 8 IS (A) T j =150 C 4 o T j =25 C o Normalized VGS(th) (V) 1.2 6 1.4 1.0 2 0.6 0 0 0.4 0.8 0.2 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C ) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 www.DataSheet4U.com AP2732GK f=1.0MHz 16 1000 I D =8A VGS , Gate to Source Voltage (V) 12 V DS =15V V DS =20V V DS =25V C (pF) C iss 8 4 C oss C rss 0 0 4 8 12 16 20 100 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthja) Duty factor=0.5 10 0.2 1ms 10ms 0.1 0.1 0.05 ID (A) 1 100ms 1s 0.1 0.02 0.01 PDM 0.01 Single Pulse t T Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja = 120℃/W T A =25 o C Single Pulse DC 0.01 0.1 1 10 100 0.001 0.0001 0.001 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 30 V DS =5V o o VG QG 4.5V QGS QGD ID , Drain Current (A) 20 T j =25 C T j =150 C 10 Charge 0 0 2 4 6 Q V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4/4