PHOTOTRANSISTOR

PHOTOTRANSISTOR AP2012P3C Features MECHANICALLY AND SPECTRALLY MATCHED TO THE AP2012 SERIES INFRARED EMITTING LED LAMP. WATER CLEAR LENS. PACKAGE : 2000PCS / REEL. RoHS COMPLIANT. Description Made with NPN silicon phototransistor chips. Package Dimensions www.DataSheet4U.com Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.1(0.004") unless otherwise noted. 3. Specifications are subject to change without notice. SPEC NO: DSAF1594 APPROVED: J. Lu REV NO: V.2 CHECKED: Allen Liu DATE: MAR/29/2005 DRAWN: B.H.LI PAGE: 1 OF 4 ERP:1203000140 Electrical / Optical Characteristics at TA=25°C Symbol VBR CEO Parameter Collector-to-Emitter Breakdown Voltage Min. 30 Typ. Max. Units V Test Conditions IC=100uA Ee=0mW/cm2 IE=100uA Ee=0mW/cm2 IC=2mA Ee=20mW/cm2 VCE=10V Ee=0mW/cm2 VBR ECO Emitter-to-Collector Breakdown Voltage 5 - - V VCE (SAT) I CEO Collector-to-Emitter Saturation Voltage Collector Dark Current - - 0.8 100 V nA TR Rise Time (10％ to 90％ ) - 3 - us TF Fall Time (90％ to 10％ ) - 3 - us VCE = 5V IC=1mA RL=1000Ω VCE = 5V, Ee=1mW/cm2, λ=940nm - I (ON) On State Collector Current Viewing Angle 0.1 - 0.3 120 - mA deg 2θ1/2 www.DataSheet4U.com Absolute Maximum Ratings at TA=25°C Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Power Dissipation at (or below) 25°C Free Air Temperature Operating Temperature Range Storage Temperature Range Max.Ratings 30V 5V 100mW -40°C ~ +85°C -40°C ~ +85°C SPEC NO: DSAF1594 APPROVED: J. Lu REV NO: V.2 CHECKED: Allen Liu DATE: MAR/29/2005 DRAWN: B.H.LI PAGE: 2 OF 4 ERP:1203000140 AP2012P3C Recommended Soldering Pattern (Units : mm) www.DataSheet4U.com Tape Specifications (Units : mm) SPEC NO: DSAF1594 APPROVED: J. Lu REV NO: V.2 CHECKED: Allen Liu DATE: MAR/29/2005 DRAWN: B.H.LI PAGE: 3 OF 4 ERP:1203000140 AP2012P3C www.DataSheet4U.com SPEC NO: DSAF1594 APPROVED: J. Lu REV NO: V.2 CHECKED: Allen Liu DATE: MAR/29/2005 DRAWN: B.H.LI PAGE: 4 OF 4 ERP:1203000140