N-Channel Enhancement Mode Field Effect Transistor

AO6420 N-Channel Enhancement Mode Field Effect Transistor General Description The AO6420 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO6420 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 60V ID = 4.2A (VGS = 10V) RDS(ON) < 60mΩ (VGS = 10V) RDS(ON) < 75mΩ (VGS = 4.5V) Rg,Ciss,Coss,Crss Tested! TSOP-6 Top View D www.DataSheet4U.com D D G 16 25 34 D D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A,F Pulsed Drain Current Power Dissipation B Maximum 60 ±20 4.2 3.4 20 2.00 1.28 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 48 74 35 Max 62.5 110 40 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO6420 N Channel Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=60V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, I D=4.2A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, I D=3A Forward Transconductance VDS=5V, ID=4.2A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125°C 1 20 50 85 60 13 0.78 1 3 450 VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz 60 25 1.65 9.5 VGS=10V, VDS=30V, I D=4.2A 4.3 1.6 2.2 5.1 VGS=10V, VDS=30V, RL=7Ω, RGEN=3Ω IF=4.2A, dI/dt=100A/µs IF=4.2A, dI/dt=100A/µs 2.6 15.9 2 25.1 28.7 7 4 20 3 35 2 11.5 5.5 540 75 60 2.3 Min 60 1 5 100 3 Typ Max Units V µA nA V A mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. F.The current rating is based on the t ≤ 10s thermal resistance rating. Rev0: Feb. 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO6420 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 20 10.0V 5.0V 15 4.5V 10 4.0V 5 VGS=3.5V 0 1 2 3 4 5 0 2 2.5 3 3.5 4 4.5 5 VGS(Volts) Figure 2: Transfer Characteristics 2 Normalized On-Resistance 1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 ID=4.2A 1.0E+00 1.0E-01 IS (A) 1.0E-02 1.0E-03 1.0E-04 1.0E-05 40 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 25°C 125°C VGS=4.5V ID=3A VGS=10 ID=4.2A ID(A) 10 125°C VDS=5V 15 ID (A) 5 25°C 0 VDS (Volts) Fig 1: On-Region Characteristics 100 90 80 RDS(ON) (mΩ) 70 60 50 40 30 20 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=10V VGS=4.5V 160 140 120 RDS(ON) (mΩ) 100 80 60 25°C 125°C Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO6420 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 10 8 VGS (Volts) 6 4 2 0 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=30V ID= 4.2A Capacitance (pF) 600 Ciss 400 Coss Crss 0 0 10 20 30 40 50 60 VDS (Volts) Figure 8: Capacitance Characteristics 800 200 100.0 40 TJ(Max)=150°C TA=25°C Power (W) RDS(ON) limited 10µs 100µ 1ms DC 10ms 0.1s 1s 10s 0.1 1 VDS (Volts) 10 100 30 10.0 ID (Amps) 1.0 20 0.1 TJ(Max)=150°C TA=25°C 10 0.0 0.01 0 0.001 0.01 0.1 1 10 100 1000 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZθJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=110°C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com