P-Channel Enhancement Mode Field Effect Transistor

AO6419 P-Channel Enhancement Mode Field Effect Transistor General Description The AO6419 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO6419 is Pb-free (meets ROHS & Sony 259 specifications). AO6419L is a Green Product ordering option. AO6419 and AO6419L are electrically identical. Features VDS (V) = -30V ID = -5 A (VGS = -10V) RDS(ON) < 52mΩ (VGS = -10V) RDS(ON) < 87mΩ (VGS = -4.5V) RDS(ON) < 110mΩ (VGS = -3.5V) D TSOP6 Top View www.DataSheet4U.com D D G 1 6 2 5 3 4 D D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -30 ±20 -5 -4.2 -20 2 1.4 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 47.5 74 37 Max 62.5 110 50 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO6419 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=-250µA, VGS=0V VDS=-24V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V VGS=-10V, ID=5.0A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-4A VGS=-3.5V, ID=-1A gFS VSD IS Forward Transconductance VDS=-5V, ID=-5A 6 IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current -1 -20 39 54 67 85 8.6 -0.77 -1 -2.8 700 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 120 75 10 14.7 VGS=-10V, VDS=-15V, ID=-5A 7.6 2 3.8 8.3 VGS=-10V, VDS=-15V, RL=3Ω, RGEN=3Ω IF=-5A, dI/dt=100A/µs IF=-5A, dI/dt=100A/µs 2 Min -30 Typ Max Units V -1 -5 ±100 -1.8 -3 52 70 87 110 µA nA V A mΩ mΩ mΩ S V A pF pF pF DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance 840 15 18 9.5 Ω nC nC nC nC ns ns ns ns SWITCHING PARAMETERS Qg (10V) Total Gate Charge (10V) Qg (4.5V) Total Gate Charge (4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge 5 29 14 23.5 13.4 30 ns nC A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 0: Nov 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO6419 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 10 -10V -6V 15 -ID (A) -5V -4V -ID(A) -4.5V 8 6 4 2 0 1.00 2.00 3.00 4.00 5.00 0 1 2 3 4 -VDS (Volts) Figure 1: On-Region Characteristics -VGS(Volts) Figure 2: Transfer Characteristics VDS=-5V 10 -3.5V VGS=-3V -2.5V 125°C 25°C 5 0 0.00 100 VGS=-3.5V 80 RDS(ON) (mΩ) VGS=-4.5V 60 VGS=-10V 40 Normalized On-Resistance 1.6 VGS=-4.5V 1.4 VGS=-10V 1.2 VGS=-3.5V 1 ID=-5A 20 1 3 5 7 9 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 160 140 120 RDS(ON) (mΩ) 100 80 60 40 25°C 125°C -IS (A) ID=-5A 1E+01 1E+00 1E-01 1E-02 1E-03 1E-04 1E-05 1E-06 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics 25°C 125°C FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 20 2 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. AO6419 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 -VGS (Volts) 6 4 2 0 0 2 4 6 8 10 12 14 16 -Qg (nC) Figure 7: Gate-Charge Characteristics 1200 VDS=-15V ID=-5A Capacitance (pF) 1000 800 600 400 Coss 200 0 0 Crss 5 10 15 20 25 30 Ciss -VDS (Volts) Figure 8: Capacitance Characteristics 100 TJ(Max)=150°C TA=25°C RDS(ON) limited 0.1s 40 10µs Power (W) 100µs 1ms 10ms 30 TJ(Max)=150°C TA=25°C -ID (Amps) 10 20 1 1s 10s DC 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZθJA Normalized Transient Thermal Resistance D=T on/T TJ,PK=T A+PDM.ZθJA.RθJA RθJA=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton T Single Pulse FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd.