P-Channel Enhancement Mode Field Effect Transistor

AO6415 P-Channel Enhancement Mode Field Effect Transistor General Description The AO6415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO6415 is Pb-free (meets ROHS & Sony 259 specifications). AO6415L is a Green Product ordering option. AO6415 and AO6415L are electrically identical. Features VDS (V) = -20V ID = -3.3A (VGS = -10V) RDS(ON) < 75mΩ (VGS = -10V) RDS(ON) < 100mΩ (VGS = -4.5V) RDS(ON) < 150mΩ (VGS = -2.5V) ESD Rating: 2000V HBM TSOP6 Top View D D G 16 25 34 D D S D www.DataSheet4U.com G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -20 ±12 -3.3 -2.7 -14 1.25 0.8 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 82 111 56 Max 100 140 70 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO6415 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=-250µA, VGS=0V VDS=-16V, VGS=0V TJ=55°C VDS=0V, VGS=±10V VDS=0V, VGS=±12V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V VGS=-10V, ID=-3.3A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-2A VGS=-2.5V, ID=-1A gFS VSD IS Forward Transconductance VDS=-5V, ID=-3.3A -0.65 IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current -0.6 -20 62 84 80 115 7 -0.82 -1 -1.5 512 VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 77 62 9.2 4.9 VGS=-4.5V, VDS=-10V, ID=-2A 0.8 1.2 11 VGS=-4.5V, VDS=-10V, RL=5Ω, RGEN=3Ω IF=-2A, dI/dt=100A/µs IF=-2A, dI/dt=100A/µs 2 Min -20 Typ Max Units V -0.003 -0.5 -2.5 ±1 ±10 µA µA µA A -0.9 -1.4 75 105 100 150 mΩ mΩ mΩ S V A pF pF pF DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance 620 13 6 Ω nC nC nC SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge 13 10 41 15 17 6 ns ns ns ns ns nC 8 34 12 13 4 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 0 : Nov 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO6415 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 -10V 20 -3.5V -ID (A) -ID(A) 15 10 5 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 140 VGS=-2.5V Normalized On-Resistance 120 RDS(ON) (mΩ) 100 80 60 VGS=-10V 40 20 0 1 2 3 4 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=-4.5V 1.4 1.6 ID=-1A, VGS=-2.5V ID=-2A, VGS=-4.5V 2 -4.5V 3 VDS=-5V 4 VGS=-2.5V 1 125°C 25°C 0 0 0.5 1 1.5 2 2.5 3 -VGS(Volts) Figure 2: Transfer Characteristics 1.2 ID=-3.3A, VGS=-10V 1.0 200 ID=-3.3A 160 RDS(ON) (mΩ) -IS (A) 1E+01 1E+00 1E-01 1E-02 1E-03 1E-04 25°C 1E-05 125°C 25°C 120 125°C 80 40 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. AO6415 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 4 -VGS (Volts) 3 2 1 0 0 1 2 3 4 5 6 -Qg (nC) Figure 7: Gate-Charge Characteristics VDS=-10V ID=-2A 800 Capacitance (pF) 600 Ciss 400 200 Crss 0 0 5 Coss 10 15 20 -VDS (Volts) Figure 8: Capacitance Characteristics 100.00 TJ(Max)=150°C TA=25°C RDS(ON) limited 20 10µs 15 10.00 -ID (Amps) TJ(Max)=150°C TA=25°C 100µs Power (W) 1.00 1s 0.10 10s DC 10ms 0.1s 10 5 0.01 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZθJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=140°C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd.