P-Channel Enhancement Mode Field Effect Transistor

Aug 2002 AO6405 P-Channel Enhancement Mode Field Effect Transistor General Description The AO6405 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = -30V ID = -5 A RDS(ON) < 52mΩ (VGS = -10V) RDS(ON) < 87mΩ (VGS = -4.5V) D TSOP6 Top View www.DataSheet4U.com D D G 1 6 2 5 3 4 D D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -30 ±20 -5 -4.2 -20 2 1.4 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 47.5 74 37 Max 62.5 110 50 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO6405 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=-4.5V, ID=-4A Forward Transconductance VDS=-5V, ID=-5A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Conditions ID=-250µA, VGS=0V VDS=-24V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V VGS=-10V, ID=5.0A TJ=125°C 6 -1 -10 39 54 67 8.6 -0.77 52 70 87 -1 -2.8 700 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 120 75 10 14.7 VGS=-10V, VDS=-15V, ID=-5A 7.6 2 3.8 8.3 5 29 14 23.5 13.4 -1.8 Min -30 -1 -5 ±100 -3 Typ Max Units V µA nA V A mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Rg Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg (10V) Total Gate Charge (10V) Qg (4.5V) Total Gate Charge (4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime VGS=-10V, VDS=-15V, RL=3Ω, RGEN=3Ω Turn-Off Fall Time IF=-5A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Alpha & Omega Semiconductor, Ltd. AO6405 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 -10V 15 -6V 10 -5V -4.5V -4V 6 10 -3.5V VGS=-3V 2 -2.5V 0 0.00 0 1.00 2.00 3.00 4.00 5.00 0 1 2 3 4 -VDS (Volts) Figure 1: On-Region Characteristics 100 Normalized On-Resistance 1.60E+00 VGS=-4.5V 1.40E+00 VGS=-10V -VGS(Volts) Figure 2: Transfer Characteristics 25°C -ID(A) 4 8 VDS=-5V -ID (A) 125°C 5 80 RDS(ON) (mΩ) VGS=-4.5V 60 VGS=-10V 40 1.20E+00 1.00E+00 ID=-5A 20 1 3 5 7 9 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 160 140 120 RDS(ON) (mΩ) -IS (A) 100 80 60 40 20 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25°C 125°C ID=-5A 8.00E-01 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 1E+00 1E-01 1E-02 1E-03 1E-04 1E-05 1E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics 25°C 125°C Alpha and Omega Semiconductor, Ltd. AO6405 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 -VGS (Volts) 6 4 2 0 0 2 4 6 8 10 12 14 16 -Qg (nC) Figure 7: Gate-Charge Characteristics 1200 VDS=-15V ID=-5A Capacitance (pF) 1000 800 600 400 Coss 200 0 0 Crss 5 10 15 20 25 30 Ciss -VDS (Volts) Figure 8: Capacitance Characteristics 100 TJ(Max)=150°C TA=25°C RDS(ON) limited 0.1s 40 10µs Power (W) 100µs 1ms 10ms 30 TJ(Max)=150°C TA=25°C -ID (Amps) 10 20 1 1s 10s DC 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZθJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. ALPHA & OMEGA SEMICONDUCTOR, INC. TSOP-6 Package Data SYMBOLS DIMENSIONS IN MILLIMETERS θ A A1 A2 b c D E E1 e e1 L θ1 MIN 1.00 0.00 1.00 0.35 0.10 2.70 2.60 1.60 0.37 1° NOM −−− −−− 1.10 0.40 0.13 2.90 2.80 1.80 0.95 BSC 1.90 BSC −−− 5° MAX 1.25 0.10 1.15 0.50 0.20 3.10 3.00 2.00 −−− 8° PACKAGE MARKING DESCRIPTION SEATING PLANE NOTE: 1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN. THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD 2. TOLERANCE ±0.100 mm (4 mil) UNLESS OTHERWISE SPECIFIED 3. COPLANARITY : 0.1000 mm 4. DIMENSION L IS MEASURED IN GAGE PLANE GAUGE PLANE RECOMMENDED LAND PATTERN TSOP-6 PART NO. CODE PART NO. AO6405 CODE D5 NOTE: P N - PART NUMBER CODE. D - YAER AND WEEK CODE. L N - ASSEMBLY LOT CODE, FAB AND ASSEMBLY LOCATION CODE. ALPHA & OMEGA SEMICONDUCTOR, INC. TSOP-6 Carrier Tape TSOP-6 Tape and Reel Data TSOP-6 Reel TSOP-6 Tape Leader / Trailer & Orientation