N-Channel Enhancement Mode Field Effect Transistor

AO6404 N-Channel Enhancement Mode Field Effect Transistor General Description The AO6404 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. Standard Product AO6404 is Pb-free (meets ROHS & Sony 259 specifications). AO6404L is a Green Product ordering option. AO6404 and AO6404L are electrically identical. Features VDS (V) = 20V ID = 8.6A (VGS = 10V) RDS(ON) < 17mΩ (VGS = 10V) RDS(ON) < 18mΩ (VGS = 4.5V) RDS(ON) < 24mΩ (VGS = 2.5V) RDS(ON) < 33mΩ (VGS = 1.8V) ESD Rating: 2000V HBM TSOP-6 Top View D D G 16 25 34 D D S G D www.DataSheet4U.com S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 20 ±12 8.6 6.8 30 2 1.28 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 45 70 33 Max 62.5 110 50 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO6404 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS BVGSO VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate-Source Breakdown Voltage Gate Threshold Voltage On state drain current Conditions ID=250µA, VGS=0V VDS=16V, V GS=0V TJ=55°C VDS=0V, VGS=±10V VDS=0V, IG=±250uA VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=10V, ID=8.5A TJ=125°C RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=5A VGS=2.5V, ID=4A VGS=1.8V, ID=3A gFS VSD IS Forward Transconductance VDS=5V, ID=8A Diode Forward Voltage IS=1A,V GS=0V Maximum Body-Diode Continuous Current ±12 0.5 30 13.4 16 14.8 18.8 25.5 36 0.73 1 2.9 1810 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 232 200 1.6 17.9 VGS=4.5V, VDS=10V, ID=8.5A 1.5 4.7 2.5 VGS=10V, V DS=10V, R L=1.2Ω, RGEN=3Ω IF=8.5A, dI/dt=100A/µs IF=8.5A, dI/dt=100A/µs 2 Min 20 Typ Max Units V 10 25 10 0.75 1 17 20 18 24 33 µA µA V V A mΩ mΩ mΩ mΩ S V A pF pF pF Ω nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge 7.2 49 10.8 22 9.8 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev2: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AO6404 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 35 30 25 ID (A) 20 15 10 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 30 25 RDS(ON) (mΩ) 20 15 10 5 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 40 35 30 RDS(ON) (mΩ) 25 IS (A) 20 15 25°C 10 5 0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.0001 0.00001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 125°C ID=5A 0.1 0.01 0.001 25°C 10 1 Normalized On-Resistance VGS=1.8V VGS=2.5V VGS=4.5V VGS=10V 1.6 ID=5A 1.4 VGS=4.5V VGS=2.5V VGS=1.5V 5 0 0 0.5 25°C 1 1.5 2 VGS(Volts) Figure 2: Transfer Characteristics 2.5 ID(A) 20 15 10 125°C 10 2.5V 4.5V 30 2V 25 VDS=5V 1.2 VGS=10V VGS=1.8V 1 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 125°C Alpha & Omega Semiconductor, Ltd. AO6404 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 4 VGS (Volts) 3 2 1 0 0 4 8 12 16 20 Qg (nC) Figure 7: Gate-Charge Characteristics 3000 VDS=10V ID=8A Capacitance (pF) 2500 2000 1500 1000 500 0 0 Coss Crss 5 10 15 20 Ciss VDS (Volts) Figure 8: Capacitance Characteristics 100.0 40 RDS(ON) limited TJ(Max)=150°C TA=25°C Power (W) 10.0 ID (Amps) 100µs 1ms 10ms 10µs 30 20 1.0 TJ(Max)=150°C TA=25°C 0.1 0.1 1 1s DC 0.1s 10 10 VDS (Volts) 100 0 0.001 0.01 0.1 1 10 100 1000 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZθJA Normalized Transient Thermal Resistance D=Ton/(Ton+Toff) TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse Toff 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd.