N-Channel Enhancement Mode Field Effect Transistor

Rev 3:Nov 2004 AO6402, AO6402L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor General Description The AO6402 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device may be used as a load switch or in PWM applications. AO6402L ( Green Product ) is offered in a lead-free package. Features VDS (V) = 30V ID = 6.9A RDS(ON) < 28mΩ (VGS = 10V) RDS(ON) < 42mΩ (VGS = 4.5V) TSOP-6 Top View www.DataSheet4U.com D D D G 16 25 34 D D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Maximum 30 ±20 6.9 5.8 20 2 1.44 -55 to 150 Units V V A VGS TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 48 74 35 Max 62.5 110 40 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO6402, AO6402L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=10V, ID=6.9A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=5.0A Forward Transconductance VDS=5V, ID=6.9A 10 Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current TJ=125°C 1 20 22.5 31.3 34.5 15.4 0.76 1 3 680 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 102 77 3 13.84 VGS=10V, VDS=15V, ID=6.9A 6.74 1.82 3.2 4.6 VGS=10V, VDS=15V, RL=2.2Ω, RGEN=3Ω IF=6.9A, dI/dt=100A/µs 4.1 20.6 5.2 16.5 7.8 20 3.6 16.7 8.1 820 28 38 42 1.9 Min 30 1 5 100 3 Typ Max Units V µA nA V A mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=6.9A, dI/dt=100A/µs 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AO6402, AO6402L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 10V 25 20 ID (A) 6V 5V 4.5V 20 16 12 VDS=5V 4V ID(A) 15 3.5V 10 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics VGS=3V 8 125°C 4 25°C 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VGS (Volts) Figure 2: Transfer Characteristics 60 50 RDS(ON) (mΩ) 40 30 20 10 0 5 10 15 20 ID (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=4.5V Normalized On-Resistance 1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0 50 100 150 200 Temperature ( °C) Figure 4: On-Resistance vs. Junction Temperature VGS=4.5V ID=5A VGS=10V VGS=10V 70 60 50 40 30 20 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25°C 125°C 1.0E+01 ID=5A IS Amps 1.0E+00 1.0E-01 1.0E-02 1.0E-03 25°C 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body diode characteristics 125°C Alpha & Omega Semiconductor, Ltd. RDS(ON) (mΩ) AO6402, AO6402L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) 6 4 2 0 0 2 4 6 8 10 12 14 Qg (nC) Figure 7: Gate-Charge characteristics 1000 VDS=15V ID=6.9A Capacitance (pF) 900 800 700 600 500 400 300 200 100 0 0 Crss 5 10 15 20 25 30 Coss Ciss f=1MHz VGS=0V VDS (Volts) Figure 8: Capacitance Characteristics 100 RDS(ON) limited 10 ID (Amps) TJ(Max)=150°C TA=25°C 1ms 100µs 10ms 0.1s 10µs Power W 40 TJ(Max)=150°C TA=25°C 30 20 1 1s 10s DC 10 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZθJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 Single Pulse 0.01 0.00001 PD Ton T 0.0001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 0.001 0.01 100 1000 Alpha & Omega Semiconductor, Ltd.