P-Channel Enhancement Mode Field Effect Transistor

AO6401 P-Channel Enhancement Mode Field Effect Transistor General Description The AO6401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO6401 is Pb-free (meets ROHS & Sony 259 specifications). AO6401L is a Green Product ordering option. AO6401 and AO6401L are electrically identical. Features VDS (V) = -30V ID = -5 A (VGS = -10V) RDS(ON) < 49mΩ (VGS = -10V) RDS(ON) < 64mΩ (VGS = -4.5V) RDS(ON) < 119mΩ (VGS = -2.5V) D TSOP6 Top View D D G 16 25 34 D D S www.DataSheet4U.com G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -30 ±12 -5 -4.2 -30 2 1.44 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 47.5 74 37 Max 62.5 110 50 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO6401 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=-250µA, VGS=0V VDS=-24V, VGS=0V TJ=55°C VDS=0V, VGS=±12V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V VGS=-10V, ID=-5A Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-4A 7 53 81 11 -0.75 -0.7 -25 42 49 74 64 119 -1 -3 943 108 73 6 9.5 2.1 2.9 6 3 40 11 21.2 12.8 -1 Min -30 -1 -5 ±100 -1.3 Typ Max Units V µA nA V A mΩ mΩ mΩ S V A pF pF pF Ω nC nC nC ns ns ns ns ns nC gFS VSD IS VGS=-2.5V, ID=-1A Forward Transconductance VDS=-5V, ID=-5A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr tD(off) tf trr Qrr Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-4.5V, VDS=-15V, ID=-5A VGS=-10V, VDS=-15V, RL=3Ω, RGEN=6Ω IF=-5A, dI/dt=100A/µs Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 3 : July 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO6401 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 -10V 20 -4.5V -3V -ID (A) 15 -ID(A) -2.5V 10 VGS=-2V 6 125°C 4 25°C 5 2 10 VDS=-5V 8 0 0 1 2 3 4 -VDS (Volts) Fig 1: On-Region Characteristics 5 0 0 0.5 1.5 2 2.5 -VGS(Volts) Figure 2: Transfer Characteristics ID=-5A VGS=-4.5V VGS=-10V 1 3 120 100 RDS(ON) (mΩ) 80 60 40 20 0 2 4 6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 190 170 150 130 RDS(ON) (mΩ) 110 90 70 50 30 10 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25°C 125°C ID=-2A VGS=-2.5V 1.6 Normalized On-Resistance 1.4 1.2 VGS=-4.5V VGS=-2.5V ID=-2A 1 VGS=-10V 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.0E+00 1.0E-01 -IS (A) 1.0E-02 1.0E-03 25°C 1.0E-04 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics 125°C Alpha & Omega Semiconductor, Ltd. AO6401 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 1400 VDS=-15V ID=-5A Capacitance (pF) 1200 1000 800 600 400 200 0 0 6 8 10 -Qg (nC) Figure 7: Gate-Charge Characteristics 2 4 12 0 0 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Coss Crss Ciss 4 -VGS (Volts) 3 2 1 100.0 TJ(Max)=150°C TA=25°C RDS(ON) limited 40 10µs 100µs 1ms 0.1s 10ms 30 Power (W) TJ(Max)=150°C TA=25°C -ID (Amps) 10.0 20 1.0 1s 10s DC 0.1 0.1 1 10 100 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZθJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 0.001 0.01 100 1000 Alpha & Omega Semiconductor, Ltd.