N-Channel Enhancement Mode Field Effect Transistor

SRFET TM AO4720 N-Channel Enhancement Mode Field Effect Transistor TM General Description SRFET The AO4720 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard Product AO4720 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 30V ID =13A (VGS = 10V) RDS(ON) < 11mΩ (VGS = 10V) RDS(ON) < 17.5mΩ (VGS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested D S S S G D D D D www.DataSheet4U.com G S SRFET TM Soft Recovery MOSFET: Integrated Schottky Diode Absolute Maximum Ratings TA=25°C unless otherwise noted Max Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C AF Current TA=70°C B Pulsed Drain Current Avalanche Current C Symbol VDS VGS 10 Sec Steady State 30 ±20 13 10 7.8 120 21 66 3.1 2.0 -55 to 150 1.7 1.1 10.5 Units V V A A A mJ W °C IDSM IDM IAR EAR PDSM TJ, TSTG Repetitive avalanche energy L=0.3mH C TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C A A Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 32 60 17 Max 40 75 24 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4720 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=11A Forward Transconductance VDS=5V, ID=13A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode + Schottky Continuous Current Conditions ID=250uA, VGS=0V VDS=30V, VGS=0V TJ=125°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=13A TJ=125°C 1.3 120 9.3 13.8 14 37 0.40 0.5 5 1267 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 308 118 1.3 21 VGS=10V, VDS=15V, ID=13A 10.4 3.0 3.6 5.2 VGS=10V, VDS=15V, RL=1.2Ω, RGEN=3Ω IF=13A, dI/dt=300A/µs 3.8 21.2 4.4 11.2 10.5 17 2.0 30 14 1600 11.0 17.3 17.5 1.62 Min 30 0.1 20 0.1 2 Typ Max Units V mA µA V A mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=13A, dI/dt=300A/µs A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The power dissipation and current rating is based on the t≤ 10s junction to ambient thermal resistance rating. Rev1: May. 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4720 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 10V 100 80 ID (A) 60 40 20 VGS=3.5V 0 0 1 2 3 4 5 VDS (Volts) PARAMETERS Figure 1: On-Region Characteristics 1.8 Normalized On-Resistance VGS=10V 1.6 ID=13A 0 1 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics 7V 5V ID(A) 4.5V 4V 6V 30 25 20 15 10 5 125° 25°C VDS=5V DYNAMIC 18 16 VGS=4.5V RDS(ON) (mΩ) 14 12 10 8 6 0 5 10 15 20 25 30 VGS=10V 1.4 VGS=4.5V 1.2 ID=11A 1 0.8 0 30 60 90 120 150 180 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 30 ID=13A 25 1.0E+02 1.0E+01 1.0E+00 125°C RDS(ON) (mΩ) 125°C IS (A) 20 1.0E-01 1.0E-02 1.0E-03 25°C 15 10 25°C 5 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4720 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 6 4 2 0 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics Capacitance (pF) VGS (Volts) VDS=15V ID=13A 2000 1600 1200 800 400 Crss 0 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Coss Ciss DYNAMIC PARAMETERS 1000.0 100.0 ID (Amps) 10.0 1ms 1.0 0.1 0.0 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 TJ(Max)=150°C TA=25°C DC 100 80 Power (W) 60 40 20 0 0.0001 TJ(Max)=150°C TA=25°C RDS(ON) limited 10µs 100µ 10ms 1s 10s 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZθJA Normalized Transient Thermal Resistance In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 D=T on/T TJ,PK=T A+PDM.ZθJA.RθJA RθJA=75°C/W 0.001 0.01 0.1 1 PD Ton T 100 1000 0.01 Single Pulse 0.001 0.00001 0.0001 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com