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Part Number |
AD8216 |
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Manufacturer |
Analog Devices |
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Semiconductor DataSheet |
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DataSheet View |
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High Bandwidth, Bidirectional 65 V Difference Amplifier AD8216
FEATURES
±4000 V HBM ESD Ideal for current shunt applications High common-mode voltage range −4 V to +65 V operating −40 V to +80 V survival 3 MHz bandwidth <100 ns output propagation delay Gain: 3 V/V Wide operating temperature range Die: −40°C to +150°C 8-lead SOIC: −40°C to +125°C Adjustable output offset Available in 8-lead SOIC Excellent ac and dc performance 10 μV/°C offset drift 10 ppm/°C gain drift
FUNCTIONAL BLOCK DIAGRAM
V+
6
+IN 8
5
OUT
–IN 1
AD8216
7
VREF 1
3
NC 4
2
VREF 2
NC = NO CONNECT
GND
Figure 1.
APPLICATIONS
High-side current sensing in DC-to-dc converters Motor controls Transmission controls Diesel-injection controls Engine management Suspension controls Vehicle dynamic controls
GENERAL DESCRIPTION
The AD8216 is a single-supply, difference amplifier ideal for amplifying small differential voltages in the presence of large common-mode voltages. The operating input common-mode voltage range extends from −4 V to +65 V. The typical supply voltage is 5 V. The AD8216 features a 3 MHz bandwidth, allowing for the input-to-output propagation delay that is always less than 150 ns. This feature is ideal for applications monitoring rapidly increasing and decreasing load currents. The AD8216 is offered in a SOIC package. The operating temperature range is −40°C to +125°C. Excellent ac and dc performance over temperature keep errors in the measurement loop to a minimum. Offset and gain drift are guaranteed to a maximum of 20 μV/°C and 15 ppm/°C, respectively. The output offset can be adjusted from 0.06 V to 4.9 V with a 5 V supply by using the VREF1 pin and the VREF2 pin. With the VREF1 pin attached to the V+ pin and the VREF2 pin attached to the GND pin, the output is set at half scale. Attaching both VREF1 and VREF2 to GND causes the output to be unipolar, starting near ground. Attaching both VREF1 and VREF2 to V+ causes the output to be unipolar, starting near V+. Other offsets can be obtained by applying an external voltage to VREF1 and VREF2.
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 ©2007 Analog Devices, Inc. All rights reserved.
07062-001
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AD8216 TABLE OF CONTENTS
Features .............................................................................................. 1 Applications....................................................................................... 1 Functional Block Diagram .............................................................. 1 General Description ......................................................................... 1 Revision History ............................................................................... 2 Specifications..................................................................................... 3 Absolute Maximum Ratings............................................................ 4 ESD Caution.................................................................................. 4 Pin Configuration and Function Descriptions............................. 5 Typical Performance Characteristics ............................................. 6 Theory of Operation ...................................................................... 10 Output Offset Adjustment............................................................. 11 Unidirectional Operation.......................................................... 11 Ground Referenced Output ...................................................... 11 V+ Referenced Output .............................................................. 11 Bidirectional Operation............................................................. 11 External ReferenceD Output .................................................... 12 Splitting the Supply .................................................................... 12 Splitting an External Reference ................................................ 12 Applications Information .............................................................. 13 High-Side Current Sense with a Low-Side Switch................. 13 High-Side Current Sense with a High-Side Switch ............... 13 Outline Dimensions ....................................................................... 14 Ordering Guide .......................................................................... 14
REVISION HISTORY
11/07—Revision 0: Initial Version
Rev. 0 | Page 2 of 16
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AD8216 SPECIFICATIONS
TA = operating temperature range, VS = 5 V, unless otherwise noted. Table 1.
Parameter GAIN Initial Accuracy Accuracy Over Temperature Gain vs. Temperature VOLTAGE OFFSET Offset Voltage, RTI Over Temperature, RTI Offset Drift INPUT Input Impedance Differential Common Mode Input Voltage Range Conditions Min Typ 3 VOUT ≥ 0.1 V dc, 25°C Specified temperature range 10 25°C Specified temperature range ±0.5 ±10 ±3 ±20 ±0.25 ±0.4 15 Max Unit V/V % % ppm/°C mV mV μV/°C
400 200 Common mode, continuous Differential, VREF1 and VREF2 tied to GND Differential, VREF1 @ GND and VREF2 @ 5 V 25°C, f = dc to 20 kHz 1 Operating temperature range, f = dc to 20 kHz1 RL = 25 kΩ −4 1.6 −800 80 80 0.06 200 3 15 100 20 0.5 Divider to supplies Voltage applied to VREF1 and VREF2 in parallel VS = 5 V 0.499 0.06 0.0 24 4.5 VOUT = 0.1 V dc 70 Operating temperature range −40 +125 1 0.501 ±0.5 4.9 VS 40 5.5 2 +800 90 90 4.9 +65
Common-Mode Rejection OUTPUT Output Voltage Range Output Resistance DYNAMIC RESPONSE Small Signal −3 dB Bandwidth Slew Rate Propagation Delay NOISE 0.1 Hz to 10 Hz, RTI Spectral Density, 1 kHz, RTI OFFSET ADJUSTMENT Ratiometric Accuracy 2 Accuracy, RTO Output Offset Adjustment Range VREF Input Voltage Range VREF Divider Resistor Values POWER SUPPLY Operating Range Quiescent Current Over Temperature Power Supply Rejection Ratio TEMPERATURE RANGE For Specified Performance
1 2
kΩ kΩ V V mV dB dB V Ω MHz V/μs ns μV p-p μV/√Hz V/V mV/V V V kΩ V mA dB °C
Input-to-output response
150
32
Source imbalance < 2 Ω. The offset adjustment is ratiometric to the power supply when VREF1 and VREF2 are used as a divider between the supplies.
Rev. 0 | Page 3 of 16
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AD8216 ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Supply Voltage Continuous Input Common-Mode Voltage Continuous Input Differential Voltage Reverse Supply Voltage ESD Rating HBM (Human Body Model) CDM (Charged Device Model) Operating Temperature Range Storage Temperature Range Output Short-Circuit Duration Rating 12.5 V −40 V to +80 V 6V 0.3 V ±4000 V ±1000 V −40°C to +125°C −65°C to +150°C Indefinite
ESD CAUTION
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Rev. 0 | Page 4 of 16
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AD8216 PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
1 8
–IN 1 GND 2 VREF 2 3
8
+IN VREF 1 V+
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AD8216
TOP VIEW (Not to Scale)
7 6 5
7 2 6 3 5
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NC 4
OUT
NC = NO CONNECT
Figure 3. Pin Configuration
Figure 2. Metallization Diagram
Table 3. Pin Function Descriptions
Pin No. 1 2 3 4 5 6 7 8 Mnemonic −IN GND VREF2 NC OUT V+ VREF1 +IN X −320 −357 −349 NC +348 +349 +349 +318 Y +390 +14 −201 NC −325 −194 −26 +390
Die size is 1100 μm by 1035 μm. Die thickness is 13 mil. Minimum passivation opening (minimum bond pad size) is 92 μm × 92 μm. Passivation type is 8 kA USG (Oxide) + 10 kA Oxynitride. Bond pad metal composition is 98.5% Al, 1% Si, and 0.5% Cu. Backside potential is V+.
Rev. 0 | Page 5 of 16
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AD8216 TYPICAL PERFORMANCE CHARACTERISTICS
500 400 300 200
GAIN (dB)
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VOSI (µV)
100 0 –100 –200 –300 –400 –500 –40 –20 0 20 40 60 80 100 120
10k
100k FREQUENCY (Hz)
1M
TEMPERATURE (°C)
Figure 4. Typical Offset Drift
120 110 100 90 80
CMRR (dB)
Figure 7. Typical Small Signal Bandwidth (VOUT = 200 mV p-p)
INPUT (200mV/DIV)
70 60 50 40 30 20 10
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OUTPUT (500mV/DIV)
100
1k
10k
100k
1M
10M
100M
FREQUENCY (Hz)
TIME (200ns/DIV)
Figure 5. CMRR vs. Frequency
1500 1300 1100 900 700
GAIN ERROR (ppm)
Figure 8. Rise Time
500 300 100 –100 –300 –500 –700 –900 –1100 –1300
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INPUT (200mV/DIV)
OUTPUT (500mV/DIV)
–20
0
20
40
60
80
100
120
TEMPERATURE (°C)
TIME (200ns/DIV)
Figure 6. Typical Gain Drift
Figure 9. Fall Time
Rev. 0 | Page 6 of 16
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–1500 –40
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0 10
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20 15 10 5 0 –5 –10 –15 –20 –25 –30 –35 –40 –45 –50 –55 –60 1k
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AD8216
MAXIMUM OUTPUT SOURCE CURRENT (mA)
10
8
INPUT (1V/DIV)
6
4
OUTPUT (2V/DIV)
2
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–20
0
20
40
60
80
100
120
140
TIME (500ns/DIV)
TEMPERATURE (°C)
Figure 10. Differential Overload Recovery (Falling)
Figure 13. Maximum Output Source Current vs. Temperature
5.0
OUTPUT VOLTAGE RANGE (V)
4.5
INPUT (1V/DIV)
4.0
3.5
3.0
OUTPUT (2V/DIV)
2.5
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0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
TIME (500ns/DIV)
OUTPUT SOURCE CURRENT (mA)
Figure 11. Differential Overload Recovery (Rising)
8 7 6 5 4 3 |