Ultrahigh Frequency Operational Amplifier

www.DataSheet4U.com a FEATURES Improved Replacement for Signetics SE/NE5539 AC PERFORMANCE Gain Bandwidth Product: 1.4 GHz typ Unity Gain Bandwidth: 220 MHz typ High Slew Rate: 600 V/ s typ Full Power Response: 82 MHz typ Open-Loop Gain: 47 dB min, 52 dB typ DC PERFORMANCE All Guaranteed DC Specifications Are 100% Tested For Each Device Over Its Full Temperature Range – For All Grades and Packages VOS: 5 mV max Over Full Temperature Range (AD5539S) IB: 20 A max (AD5539J) CMRR: 70 dB min, 85 dB typ PSRR: 100 V/V typ MIL-STD-883B Parts Available PRODUCT DESCRIPTION Ultrahigh Frequency Operational Amplifier AD5539 CONNECTION DIAGRAM Plastic DIP (N) Package or Cerdip (Q) Package PRODUCT HIGHLIGHTS 1. All guaranteed dc specifications are 100% tested. 2. The AD5539 drives 50 Ω and 75 Ω loads directly. 3. Input voltage noise is less than 4 nV√Hz. 4. Low cost RF and video speed performance. 5. ± 2 volt output range into a 150 Ω load. 6. Low cost. 7. Chips available. The AD5539 is an ultrahigh frequency operational amplifier designed specifically for use in video circuits and RF amplifiers. Requiring no external compensation for gains greater than 5, it may be operated at lower gains with the addition of external compensation. As a superior replacement for the Signetics NE/SE5539, each AD5539 is 100% dc tested to meet all of its guaranteed dc specifications over the full temperature range of the device. The high slew rate and wide bandwidth of the AD5539 provide low cost solutions to many otherwise complex and expensive high frequency circuit design problems. The AD5539 is available specified to operate over either the commercial (AD5539JN/JQ) or military (AD5539SQ) temperature range. The commercial grade is available either in 14-pin plastic or cerdip packages. The military version is supplied in the cerdip package. Chip versions are also available. REV. B Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 617/329-4700 Fax: 617/326-8703 AD5539–SPECIFICATIONS (@ +25 C and V = S 8 V dc, unless otherwise noted) AD5539S Typ 2 Parameter INPUT OFFSET VOLTAGE Initial Offset1 TMIN to TMAX INPUT OFFSET CURRENT Initial Offset2 TMIN to TMAX INPUT BIAS CURRENT Initial2 VCM = 0 Either Input TMIN to TMAX FREQUENCY RESPONSE RL = 150 Ω3 Small Signal Bandwidth ACL = 24 Gain Bandwidth Product ACL = 26 dB Full Power Response ACL = 24 ACL = 7 ACL = 20 Settling Time (1%) Slew Rate Large Signal Propagation Delay Total Harmonic Distortion RL = ∞ RL = 100 Ω3 VOUT = 2 V p–p ACL = 7, f = 1 kHz INPUT IMPEDANCE OUTPUT IMPEDANCE (f <10 MHz) INPUT VOLTAGE RANGE Differential5 (Max Nondestructive) Common-Mode Voltage (Max Nondestructive) Common-Mode Rejection Ratio ∆VCM = 1.7 V RS = 100 Ω TMIN to TMAX INPUT VOLTAGE NOISE Wideband RMS Noise (RTI) BW = 5 MHz; RS = 50 Ω Spot Noise F = 1 kHz; RS = 50 Ω OPEN-LOOP GAIN VO = +2.3 V, –1.7 V RL = 150 Ω3 RL = 2 kΩ TMIN to TMAX –RL = 2 kΩ Min AD5539J Typ 2 Max 5 6 2 5 Min Max 3 5 1 3 Units mV mV µA µA µA µA 0.1 0.1 6 20 40 6 13 25 220 1400 220 1400 MHz MHz 68 82 65 12 600 4 0.010 0.016 68 82 65 12 600 4 0.010 0.016 MHz MHz MHz ns V/µs ns % % 100 2 100 2 kΩ Ω 250 2.5 250 2.5 mV V 70 60 85 70 60 85 dB dB FV nV√Hz 5 4 5 4 47 47 43 52 58 58 63 47 48 46 52 58 57 60 dB dB dB –2– REV. B AD5539 AD5539J Parameter Min Typ OUTPUT CHARACTERISTICS Positive Output Swing RL = 150 Ω3 +2.3 +2.8 RL = 2 kΩ +2.3 +3.3 TMIN to TMAX with RL = 2 kΩ +2.3 Negative Output Swing RL = 150 Ω3 –2.2 RL = 2 kΩ –2.9 TMIN to TMAX with RL = 2 kΩ POWER SUPPLY (No Load, No Resistor to –VS) Rated Performance ±8 Operating Range 4.5 Quiescent Current Initial ICC+ 14 TMIN to TMAX Initial ICC– 11 TMIN to TMAX PSRR Initial 100 TMIN to TMAX TEMPERATURE RANGE Operating, Rated Performance Commercial (0°C to +70°C) AD5539JN, AD5539JQ Military (–55°C to +125°C) PACKAGE OPTIONS Plastic (N-14) AD5539JN Cerdip (Q-14) AD5539JQ J and S Grade Chips Available Max Min AD5539S Typ Max Units +2.3 +2.5 +2.3 –1.7 –1.7 –1.5 +2.8 +3.3 V V V –2.2 –2.9 –1.7 –2.0 –1.5 V V V V V mA mA mA mA µV/V µV/V ±8 10 18 20 15 17 1000 2000 4.5 14 11 10 17 18 14 15 1000 2000 100 AD5539SQ AD5539SQ, AD5539SQ/883B NOTES 1 Input Offset Voltage specifications are guaranteed after 5 minutes of operation at T A = +25°C. 2 Bias Current specifications are guaranteed maximum at either input after 5 minutes of operation at T A = +25°C. 3 RX = 470 Ω to –VS. 4 Externally compensated. 5 Defined as voltage between inputs, such that neither exceeds +2.5 V, –5.0 V from ground. Specifications subject to change without notice. Specifications in boldface are tested on all production units at final electrical test. Results from those tests are used to calculate outgoing quality levels. All min and max specifications are guaranteed, although only those shown in boldface are tested on all production units. REV. B –3– AD5539 Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 10 V Internal Power Dissipation . . . . . . . . . . . . . . . . . . . . . 550 mW Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . +2.5 V, –5.0 V Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . 0.25 V Storage Temperature Range (Q) . . . . . . . . . –65°C to +150°C Storage Temperature Range (N) . . . . . . . . . –65°C to +125°C Operating Temperature Range AD5539JN . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to +70°C AD5539JQ . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to +70°C AD5539SQ . . . . . . . . . . . . . . . . . . . . . . . –55°C to +125°C Lead Temperature Range (Soldering 60 Seconds) . . . +300°C * ABSOLUTE MAXIMUM RATINGS * OFFSET NULL CONFlGURATION Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. METALIZATION PHOTOGRAPH Dimensions shown in inches and (mm). Contact factory for latest dimensions. CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD5539 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. WARNING! ESD SENSITIVE DEVICE –4– REV. B Typical Characteristics—AD5539 Figure 1. Output Voltage Swing vs. Supply Voltage Figure 2. Output Voltage Swing vs. Load Resistance Figure 3. Maximum CommonMode Voltage vs. Supply Voltage Figure 4. Positive Supply Current vs. Supply Voltage Figure 5. Input Voltage vs. Output Voltage for Various Temperatures Figure 6. Low Frequency Input Noise vs. Frequency Figure 7. Common-Mode Rejection Ratio vs. Frequency Figure 8. Harmonic Distortion vs. Frequency – Low Gain Figure 9. Harmonic Distortion vs. Frequency – High Gain REV. B –5– AD5539 Figure 10. Full Power Response Figure 11. Deviation from Ideal Gain vs. Closed-Loop Voltage Gain Figure 12. AD5539 Circuit FUNCTIONAL DESCRIPTION The AD5539 is a two-stage, very high frequency amplifier. Darlington input transistors Q1, Q4–Q2, Q3 form the first stage—a differential gain amplifier with a voltage gain of approximately 50. The second stage, Q5, is a single-ended amplifier whose input is derived from one phase of the differential amplifier output; the other phase of the differential output is then summed with the output of Q5. The all NPN design of the AD5539 is configured such that the emitter of Q5 is returned, via a small resistor to ground; this eliminates the need for separate level shifting circuitry. The output stage, consisting of transistors Q9 and Q10, is a Darlington voltage follower with a resistive pull-down. The bias section, consisting of transistors Q6, Q7 and Q8, provides a stable emitter current for the input section, compensating for temperature and power supply variations. SOME GENERAL PRINCIPLES OF HIGH FREQUENCY CIRCUIT DESIGN some special precautions are in order. All real-world applications circuits must be built using proper RF techniques: the use of short interconnect leads, adequate shielding, groundplanes, and very low profile IC sockets. In addition, very careful bypassing of power supply leads is a must. Low-impedance transmission line is frequently used to carry signals at RF frequencies: 50 Ω line for telecommunications purposes and 75 Ω for video applications. The AD5539 offers a relatively low output impedance; therefore, some consideration must be given to impedance matching. A common matching technique involves simply placing a resistor in series with the amplifier output that is equal to the characteristic impedance of the transmission line. This provides a good match (although at a loss of 6 dB), adequate for many applications. All of the circuits here were built and tested in a 50 Ω system. Care should be taken in adapting these circuits for each particular use. Any system which has been properly matched and terminated in its characteristic impedance should have the same small signal frequency response as those shown in this data she