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Toshiba Semiconductor
Toshiba Semiconductor

A1941 Datasheet

2SA1941


A1941 Datasheet Preview


TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1941
Power Amplifier Applications
2SA1941
Unit: mm
High breakdown voltage: VCEO = 140 V (min)
Complementary to 2SC5198
Recommended for 70-W high-fidelity audio frequency amplifier
output stage.
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
140
V
Collector-emitter voltage
VCEO
140
V
Emitter-base voltage
VEBO 5 V
Collector current
IC 10 A
Base current
IB 1 A
Collector power dissipation
(Tc = 25°C)
PC 100 W
JEDEC
Junction temperature
Storage temperature range
Tj 150 °C
Tstg
55 to 150
°C
JEITA
TOSHIBA
2-16C1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 4.7 g (typ.)
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-09
Page 1

Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = 140 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 50 mA, IB = 0
hFE (1)
(Note)
VCE = 5 V, IC = 1 A
hFE (2)
VCE (sat)
VCE = 5 V, IC = 5 A
IC = 7 A, IB = 0.7 A
VBE VCE = 5 V, IC = 5 A
fT VCE = 5 V, IC = 1 A
Cob VCB = 10 V, IE = 0, f = 1 MHz
Note: hFE (1) classification R: 55 to 110, O: 80 to 160
Marking
2SA1941
Min
140
Typ.
Max
5.0
5.0
Unit
μA
μA
V
55 160
35 83
― −0.8 2.0
V
― −1.0 1.5
V
30 MHz
320
pF
TOSHIBA
A1941
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2 2006-11-09
Page 2

10
8
6
4
2
0
0
IC – VCE
250
200
150
Common emitter
Tc = 25°C
100
50
40
30
20
IB = 10 mA
2 4 6 8 10
Collector-emitter voltage VCE (V)
2SA1941
IC – VBE
10
8
6
Tc = 100°C
4
25°C
2 25°C
Common emitter
VCE = 5 V
0
0
0.4
0.8
1.2
1.6
2.0
Base-emitter voltage VBE (V)
VCE (sat) – IC
10
1
0.1
0.01
0.01
Tc = 100°C
Tc = 25°C
Tc = 25°C
0.1
1
Common emitter
IC/IB = 10
10 100
Collector current IC (A)
Safe Operating Area
50
30 IC max (pulsed)*
10 IC max (continuous)
1 ms*
10 ms*
5
3
DC operation
Tc = 25°C
1
100 ms*
0.5
0.3
*: Single nonrepetitive
pulse Tc = 25°C
Curves must be derated
0.1 linearly with increase in
temperature.
0.05
2 3
10
30
VCEO max
100 300 1000
Collector-emitter voltage VCE (V)
1000
hFE – IC
Tc = 100°C
Tc = 25°C
100
Tc = 25°C
10
1
0.01
Common emitter
VCE = 5 V
0.1 1 10
Collector current IC (A)
3 2006-11-09
Page 3
Part Number A1941
Manufactur Toshiba Semiconductor
Description 2SA1941
Total Page 4 Pages
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