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A1757 Datasheet

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1757
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Description
This product is Dual N-Channel MOS Field Effect Transistor
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designed for power management application of
notebook computers, and Li-ion battery application.
Features
Dual MOS FET chips in small package
2.5 V gate drive type and low on-resistance
RDS(on)1 = 23 mΩ (MAX.) (VGS = 4.5 V, ID = 3.5 A)
RDS(on)2 = 32 mΩ (MAX.) (VGS = 2.5 V, ID = 3.5 A)
Low Ciss Ciss = 750 pF Typ.
Built-in G-S protection diode
Small and surface mount package
(Power SOP8)
Ordering information
Part Number
µ PA1757G
Package
Power SOP8
Package Drawing (Unit : mm)
85
14
5.37 Max.
1 ; Source 1
2 ; Gate 1
7, 8 ; Drain 1
3 ; Source 2
4 ; Gate 2
5, 6 ; Drain 2
6.0 ±0.3
4.4
1.27 0.78 Max.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.8
0.10
Absolute Maximum Ratings (TA = 25 °C)
Drain to source voltage
VDSS
20 V
Gate to source voltage
VGSS
±12.0
V
Drain current (DC)
Drain current (pulse)Note1
Total power dissipation (1 unit)Note2
Total power dissipation (2 unit)Note2
ID(DC)
ID(pulse)
PT
PT
±7.0 A
±28 A
1.7 W
2.0 W
Channel temperature
Tch 150 °C
Storage temperature
Tstg 55 to +150 °C
Notes 1. PW 10 µ s, Duty Cycle 1 %
2. TA = 25 °C, Mounted on ceramic substrate of 2000 mm2 x 1.1 mm
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may
be applied to this device.
The information in this document is subject to change without notice.
Document No. D12910EJ2V0DS00 (2nd edition)
Date Published September 1998 NS CP (K)
Printed in Japan
© 1998
Page 1

Electrical Characteristics (TA = 25 °C)
Characteristics
Symbol
Test Conditions
Drain to source on-state resistance
Gate to source cutoff voltage
Forward transfer admittance
Drain leakage current
Gate to source leakage current
Input capacitance
Output capacitance
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Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body diode forward voltage
RDS(on)1
RDS(on)2
VGS(off)
| yfs |
IDSS
IGSS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
VGS = 4.5 V, ID = 3.5 A
VGS = 2.5 V, ID = 3.5 A
VDS = 10 V, ID = 1.0 mA
VDS = 10 V, ID = 3.5 A
VDS = 20 V, VGS = 0 V
VGS = ±12.0 V, VDS = 0 V
VDS = 10 V
VGS = 0 V
f = 1 MHz
ID = 3.5 A
VGS(on) = 4.0 V
VDD = 10 V
RG = 10
ID = 7.0 A
VDD = 16 V
VGS = 4.0 V
IF = 7.0 A, VGS = 0 V
µ PA1757
MIN. TYP. MAX. Unit
16.2 23 m
22 32 m
0.5 0.8 1.5 V
5.0 13
S
10 µ A
±10 µ A
750 pF
420 pF
140 pF
57 ns
206 ns
593 ns
815 ns
13.0 nC
2.6 nC
5.3 nC
0.75 V
Test circuit 1 Switching time
D.U.T.
RG
PG. RG = 10
VGS
0
τ
τ = 1µ s
Duty Cycle 1 %
RL
VDD
VGS
VGS
Wave Form
010 %
VGS(on)
ID 90 %
ID
Wave Form
0 10 %
td(on)
ID
tr td(off)
90 %
90 %
10 %
tf
ton toff
Test circuit 2 Gate charge
D.U.T.
IG = 2 mA
RL
PG. 50
VDD
2
Page 2

µ PA1757
Typical Characteristics (TA = 25 °C)
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1 000
100
10
1
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0.1
0.01
0.001
10µ 100 µ 1 m 10 m 100 m
Mounted on ceramic
substrate of 2000mm2 x 1.1mm
Single Pulse , 1 unit
1 10 100 1 000
PW - Pulse Width - S
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
TA=-50˚C
-25˚C
VDS=10V
Pulsed
10 TA=25˚C
75˚C
150˚C
1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
75 Pulsed
50
ID=3.5A
25
0.1 1 10 100
ID- Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
60 Pulsed
40
VGS=2.5V
20
VGS=4.5V
01
10 100
ID - Drain Current - A
0 2 4 6 8 10 12 14
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
VDS = 10 V
1.0 ID = 1 mA
0.5
0
- 50 0 50 100 150
Tch - Channel Temperature -˚C
3
Page 3

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
40
VGS=2.5V
30
20 VGS=4.5V
10
0
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ID= 3.5A
- 50 0 50 100 150
Tch - Channel Temperature -˚C
10000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0
f = 1 MHz
1000
100
Ciss
Coss
Crss
10
0.1
1 10
VDS - Drain to Source Voltage - V
100
1 000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt =100A/µ s
VGS = 0
100
10
1
0.1 1 10 100
IF - Diode Current - A
µ PA1757
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100
VGS=2.5V
10
VGS=0
1
0.1
0
0.5 1.0
VSD - Source to Drain Voltage - V
1.5
1 000
100
SWITCHING CHARACTERISTICS
tr tf
td(off)
td(on)
10
1
0.1
VDD =10V
VGS(on) = 4V
RG =10
1 10 100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40 8
ID=7.0A
30
VDD=16V
VGS
6
10V
4V
20 4
10 2
VDS
0
0 4 8 12 16
QG - Gate Charge - nC
4
Page 4
Part Number A1757
Manufactur NEC
Description Search -----> UPA1757
Total Page 8 Pages
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