Search -----> 2SA1034

www.DataSheet4U.com Transistor 2SA1034, 2SA1035 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SC2405 and 2SC2406 Unit: mm s Features q q q 2.9 –0.05 Parameter Collector to base voltage Collector to 2SA1034 2SA1035 2SA1034 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –35 –55 –35 –55 –5 –100 –50 200 150 –55 ~ +150 Unit 1.1 –0.1 +0.2 2 emitter voltage 2SA1035 Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V mA mA mW ˚C ˚C 1:Base 2:Emitter 3:Collector JEDEC:TO–236 EIAJ:SC–59 Mini Type Package Marking symbol : F(2SA1034) H(2SA1035) s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Noise voltage *h FE1 (Ta=25˚C) Symbol ICBO ICEO Conditions VCB = –10V, IE = 0 VCE = –10V, IB = 0 IC = –10µA, IE = 0 IC = –2mA, IB = 0 IE = –10µA, IC = 0 VCE = –5V, IC = –2mA IC = –100mA, IB = –10mA*2 VCE = –1V, IC = –100mA*2 VCB = –5V, IE = 2mA, f = 200MHz VCE = –10V, IC = –1mA, GV = 80dB Rg = 100kΩ, Function = FLAT *2 min typ 0 to 0.1 0.1 to 0.3 0.4±0.2 0.8 V max –100 –1 0.16 –0.06 +0.1 0.4 –0.05 +0.1 s Absolute Maximum Ratings 1.9±0.2 Low noise voltage NV. High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) 2.8 –0.3 0.65±0.15 +0.2 1.5 –0.05 +0.25 0.65±0.15 0.95 1 +0.2 0.95 3 1.45 Unit nA µA V 2SA1034 2SA1035 2SA1034 2SA1035 VCBO VCEO VEBO hFE*1 VCE(sat) VBE fT NV –35 –55 –35 –55 –5 180 – 0.7 200 700 – 0.6 –1.0 V V V V MHz 150 mV Rank classification Rank hFE R 180 ~ 360 2SA1034 2SA1035 FR HR S 260 ~ 520 FS HS T 360 ~ 700 FT HT Pulse measurement Marking Symbol 1 www.DataSheet4U.com Transistor PC — Ta 240 –160 –140 200 2SA1034, 2SA1035 IC — VCE Ta=25˚C –160 VCE=–5V Ta=25˚C –140 IC — IB Collector power dissipation PC (mW) Collector current IC (mA) –120 –100 –80 –60 –300µA –250µA –200µA –150µA –100µA 160 120 Collector current IC (mA) IB=–350µA –120 –100 –80 –60 –40 –20 0 80 –40 –50µA –20 40 0 0 20 40 60 80 100 120 140 160 0 0 –2 –4 –6 –8 –10 –12 0 – 0.1 – 0.2 – 0.3 – 0.4 – 0.5 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base current IB (mA) IB — VBE –800 VCE=–5V Ta=25˚C –700 –100 –120 IC — VBE Collector to emitter saturation voltage VCE(sat) (V) –100 –30 –10 –3 –1 VCE=–5V 25˚C Ta=75˚C –80 –25˚C VCE(sat) — IC IC/IB=10 Base current IB (µA) –600 –500 –400 –300 –200 –100 0 0 – 0.2 – 0.4 – 0.6 – 0.8 –1.0 Collector current IC (mA) –60 –40 – 0.3 25˚C – 0.1 Ta=75˚C –20 –25˚C – 0.03 – 0.01 –0.1 –0.3 0 0 – 0.4 – 0.8 –1.2 –1.6 –2.0 –1 –3 –10 –30 –100 Base to emitter voltage VBE (V) Base to emitter voltage VBE (V) Collector current IC (mA) hFE — IC 600 VCE=–5V 500 450 500 Ta=75˚C 400 25˚C fT — IE Collector output capacitance Cob (pF) VCB=–5V Ta=25˚C 20 18 16 14 12 10 8 6 4 2 0 – 0.1 – 0.3 Cob — VCB IE=0 f=1MHz Ta=25˚C Forward current transfer ratio hFE Transition frequency fT (MHz) –10 –30 –100 400 350 300 250 200 150 100 50 300 –25˚C 200 100 0 – 0.1 – 0.3 –1 –3 0 0.1 0.3 1 3 10 30 100 –1 –3 –10 –30 –100 Collector current IC (mA) Emitter current IE (mA) Collector to base voltage VCB (V) 2 www.DataSheet4U.com Transistor NV — VCE 160 140 IC=–1mA GV=80dB Function=FLAT 300 IC=–1mA GV=80dB Function=RIAA 2SA1034, 2SA1035 NV — VCE 160 140 VCE=–10V GV=80dB Function=FLAT NV — IC Noise voltage NV (mV) Noise voltage NV (mV) 120 Rg=100kΩ 100 80 60 40 4.7kΩ 20 0 –1 22kΩ Noise voltage NV (mV) 240 Rg=100kΩ 180 120 100 Rg=100kΩ 80 60 22kΩ 40 4.7kΩ 20 0 – 0.01 120 22kΩ 60 4.7kΩ 0 –1 –3 –10 –30 –100 –3 –10 –30 –100 – 0.03 – 0.1 – 0.3 –1 Collector to emitter voltage VCE (V) Collector to emitter voltage VCE (V) Collector current IC (mA) NV — IC 300 VCE=–10V GV=80dB Function=RIAA 160 140 NV — Rg 300 VCE=–10V GV=80dB Function=FLAT NV — Rg VCE=–10V GV=80dB Function=RIAA Noise voltage NV (mV) Noise voltage NV (mV) 120 100 80 60 IC=–1mA 40 – 0.5mA 20 0 – 0.1mA 180 Noise voltage NV (mV) 240 240 180 120 Rg=100kΩ 22kΩ 4.7kΩ 120 60 60 IC=–1mA – 0.5mA – 0.1mA 0 – 0.01 0 1 3 10 30 100 1 3 10 30 100 – 0.03 – 0.1 – 0.3 –1 Collector current IC (mA) Signal source resistance Rg (kΩ) Signal source resistance Rg (kΩ) 3