NPN TRANSISTOR 1.5A
8050
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS¡] PARAMETERS Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Leakage Collector-Emitter Leakage Emitter-Base Leakage Collector-Emitter Saturation Voltage Base-Emiiter Saturation Voltage DC Current Gain Collector Current Peak Collector Current Current Gain Bandwidth Output Capacitance Power Dissipation Junction Temperature Storage Temperature Hfe1 Classification Rank Range
Ta=25¢J¡^
SYMBOL MIN TYP MAX UNIT CONDITION BVceo V Ic=0.1mA 25 BVcbo 45 V Ic=100uA BVebo V 5 Ie=100£g A Icbo 0.1 uA Vcb=40V Iceo 0.1 uA Vce=20V Iebo 0.1 uA Veb=5V www.DataSheet4U.com 0.6 V Ic=1500mA, Ib=50mA ^ Vce(sat¡ Vbe(sat) 1.2 V Ic=1500mA, Ib=50mA Hfe1 85 Vce=1V,Ic=50mA 300 Hfe2 50 Vce=1V,Ic=500mA Ic 1.5 A Icp 8 A(Pulse) fT MHz Vcb=6V, Ic=20mA 150 Cob 32 pF Vcb=20V,Ie=0,f=1MHz Pc 1.0 W Tj 150 ¢J Tstg -55 150 ¢J
B 85-160
C 120-200
D 160-300
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295
