Hiperfast (tm) Igbt

www.DataSheet4U.com HiPerFASTTM IGBT IXGA 7N60B IXGP 7N60B VCES IC25 VCE(sat) tfi = 600 V = 14 A = 2V = 150 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 Ω Clamped inductive load, L = 300 µH TC = 25°C Maximum Ratings 600 600 ±20 ±30 14 7 30 ICM = 14 @ 0.8 VCES 54 -55 ... +150 150 -55 ... +150 300 Μ3 Μ3.5 0.45/4 0.55/5 4 2 V V V V A A A TO-220AB (IXGP) G CE TO-263 AA (IXGA) G A W °C °C °C °C Nm/lb.in. g g Features G = Gate, E = Emitter, E C (TAB) C = Collector, TAB = Collector Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque, (TO-220) TO-220 TO-263 • International standard packages JEDEC TO-263 surface mountable and JEDEC TO-220 AB • Medium frequency IGBT • High current handling capability • HiPerFASTTM HDMOSTM process • MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 5.5 100 500 ±100 1.8 2.0 V V µA µA nA V BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250 µA, VGE = 0 V = 250 µA, VCE = VGE TJ = 25°C TJ = 125°C • Uninterruptible power supplies (UPS) • Switched-mode and resonant-mode power supplies • AC motor speed control • DC servo and robot drives • DC choppers Advantages • High power density • Suitable for surface mounting • Very low switching losses for high frequency applications VCE = 0.8 VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V © 2002 IXYS All rights reserved 98563A (06/02) www.DataSheet4U.com IXGA 7N60B IXGP 7N60B Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 3 7 500 S pF pF pF nC nC nC ns ns mJ 200 250 ns ns Dim. A B C D E F G H J K M N Q R Pins: 2 - Collector 4 - Collector Millimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 1 - Gate 3 - Emitter Bottom Side Symbol Test Conditions TO-220 AB Outline gfs Cies Coes Cres Qg Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK IC = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % VCE = 25 V, VGE = 0 V, f = 1 MHz 50 17 25 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 5 10 Inductive load, TJ = 25°C IC = IC90, VGE = 15 V, L = 300 µH, VCE = 0.8 VCES, RG = Roff = 22 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG Inductive load, TJ = 125°C IC = IC90, VGE = 15 V, L = 300 µH VCE = 0.8 VCES, RG = Roff = 22 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG 9 10 0.07 100 150 0.3 10 15 0.15 200 250 0.6 0.6 mJ ns ns mJ ns ns mJ 2.3 K/W Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 TO-263 AA Outline (TO-220) 0.25 K/W 1. 2. 3. 4. Gate Collector Emitter Collector Bottom Side Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .018 .190 .110 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .015 .029 Min. Recommended Footprint (Dimensions in inches and mm) Dim. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 7.11 9.65 6.86 2.54 14.61 2.29 1.02 1.27 0 0.46 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.13 10.29 8.13 BSC 15.88 2.79 1.40 1.78 0.38 0.74 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1