HCMOS family characteristics



Part  Number 74HCU
Manufacturer Philips
Semiconductor DataSheet

DataSheet View

INTEGRATED CIRCUITS DATA SHEET FAMILY SPECIFICATIONS HCMOS family characteristics March 1988 File under Integrated Circuits, IC06 Philips Semiconductors HCMOS family characteristics GENERAL These family specifications cover the common electrical ratings and characteristics of the entire HCMOS 74HC/HCT/HCU family, unless otherwise specified in the individual device data sheet. INTRODUCTION The 74HC/HCT/HCU high-speed Si-gate CMOS logic family combines the low power advantages of the HE4000B family with the high speed and drive capability of the low power Schottky TTL (LSTTL). The family will have the same pin-out as the 74 series and provide the same circuit functions. In these families are included several HE4000B family circuits which do not have TTL counterparts, and some special circuits. The basic family of buffered devices, designated as XX74HCXXXXX, will operate at CMOS input logic levels for high noise immunity, negligible typical quiescent supply and input current. It is operated from a power supply of 2 to 6 V. FAMILY SPECIFICATIONS A subset of the family, designated as XX74HCTXXXXX, with the same features and functions as the “HC-types”, will operate at standard TTL power supply voltage (5 V ± 10%) and logic input levels (0.8 to 2.0 V) for use as pin-to-pin compatible CMOS replacements to reduce power consumption without loss of speed. These types are also suitable for converted switching from TTL to CMOS. Another subset, the XX74HCUXXXXX, consists of single-stage unbuffered CMOS compatible devices for application in RC or crystal controlled oscillators and other types of feedback circuits which operate in the linear mode. HANDLING MOS DEVICES Inputs and outputs are protected against electrostatic effects in a wide variety of device-handling situations. However, to be totally safe, it is desirable to take handling precautions into account (see also “HANDLING PRECAUTIONS”). RECOMMENDED OPERATING CONDITIONS FOR 74HC/HCT 74HC SYMBOL PARAMETER min. typ. VCC VI VO Tamb Tamb tr, tf DC supply voltage DC input voltage range DC output voltage range 2.0 0 0 5.0 max. 6.0 VCC VCC +85 +125 1000 6.0 500 400 Note 1. For analog switches, e.g. “4016”, “4051 series”, “4351 series”, “4066” and “4067”, the specified maximum operating supply voltage is 10 V. 6.0 500 ns min. typ. max. 4.5 0 0 −40 −40 5.0 5.5 VCC VCC +85 +125 V V V °C °C see DC and AC CHAR. per device VCC = 2.0 V VCC = 4.5 V VCC = 6.0 V 74HCT UNIT CONDITIONS operating ambient temperature range −40 operating ambient temperature range −40 input rise and fall times except for Schmitt-trigger inputs March 1988 2 Philips Semiconductors HCMOS family characteristics RECOMMENDED OPERATING CONDITIONS FOR 74HCU FAMILY SPECIFICATIONS 74HCU SYMBOL VCC VI VO Tamb Tamb PARAMETER min. typ. max. DC supply voltage DC input voltage range DC output voltage range operating ambient temperature range operating ambient temperature range 2.0 0 0 −40 −40 5.0 6.0 VCC VCC +85 V V V °C see DC and AC CHAR. per device UNIT CONDITIONS +125 °C RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Voltages are referenced to GND (ground = 0 V) SYMBOL VCC ±IIK ±IOK ±IO PARAMETER DC supply voltage DC input diode current DC output diode current DC output source or sink current standard outputs bus driver outputs ±ICC; ±IGND DC VCC or GND current for types with: standard outputs bus driver outputs Tstg Ptot storage temperature range power dissipation per package plastic DIL plastic mini-pack (SO) Note 1. For analog switches, e.g. “4016”, “4051 series”, “4351 series”, “4066” and “4067”, the specified maximum operating supply voltage is 11 V. 750 500 mW mW −65 50 70 +150 mA mA °C for temperature range: −40 to +125 °C 74HC/HCT/HCU above +70 °C: derate linearly with 12 mW/K above +70 °C: derate linearly with 8 mW/K 25 35 mA mA MIN. MAX. −0.5 +7 20 20 UNIT CONDITIONS V mA mA for VI < −0.5 or VI > VCC + 0.5 V for VO < −0.5 or VO > VCC + 0.5 V for −0.5 V < VO < VCC + 0.5 V March 1988 3 Philips Semiconductors HCMOS family characteristics DC CHARACTERISTICS FOR 74HC Voltages are referenced to GND (ground = 0 V) Tamb (°C) 74HC SYMBOL PARAMETER +25 −40 to +85 FAMILY SPECIFICATIONS TEST CONDITIONS UNIT V CC (V) V 2.0 4.5 6.0 0.5 1.35 1.8 1.9 4.4 5.9 3.7 5.2 3.7 5.2 V V V V 2.0 4.5 6.0 2.0 4.5 6.0 4.5 6.0 4.5 6.0 0.1 0.1 0.1 0.4 0.4 0.4 0.4 1.0 µA V V V 2.0 4.5 6.0 4.5 6.0 4.5 6.0 6.0 VIH or VIL VIH or VIL VIH or VIL VIH or VIL VIH or VIL VIH or VIL VCC or GND VIH or VIL VO = VCC or GND −IO = 20 µA −IO = 20 µA −IO = 20 µA −IO = 4.0 mA −IO = 5.2 mA −IO = 6.0 mA −IO = 7.8 mA IO = 20 µA IO = 20 µA IO = 20 µA IO = 4.0 mA IO = 5.2 mA IO = 6.0 mA IO = 7.8 mA −40 to +125 max. VI OTHER min. typ. max. min. max. min. VIH HIGH level input voltage 1.5 4.2 VIL LOW level input voltage 1.2 3.2 0.8 2.1 2.8 VOH HIGH level output voltage all outputs HIGH level output voltage standard outputs HIGH level output voltage bus driver outputs LOW level output voltage all outputs LOW level output voltage standard outputs LOW level output voltage bus driver outputs input leakage current 1.9 4.4 5.9 2.0 4.5 6.0 0.5 1.35 1.8 1.9 4.4 5.9 3.84 5.34 3.84 5.34 0.1 0.1 0.1 0.1 0.1 0.1 0.33 0.33 0.33 0.33 1.0 1.5 3.15 4.2 0.5 1.35 1.8 1.5 3.15 4.2 3.15 2.4 VOH 3.98 4.32 5.48 5.81 3.98 4.32 5.48 5.81 0 0 0 VOH VOL VOL 0.15 0.26 0.16 0.26 0.15 0.26 0.16 0.26 0.1 VOL ±II ±IOZ 3-state OFF-state current quiescent supply current SSI flip-flops MSI LSI 0.5 5.0 10.0 µA 6.0 ICC 2.0 4.0 8.0 50.0 20.0 40.0 80.0 500 40.0 80.0 160.0 1000 µA 6.0 6.0 6.0 6.0 VCC IO = 0 or IO = 0 GND IO = 0 IO = 0 March 1988 4 Philips Semiconductors HCMOS family characteristics DC CHARACTERISTICS FOR 74HCT Voltages are referenced to GND (ground = 0 V) Tamb (°C) 74HCT SYMBOL PARAMETER +25 FAMILY SPECIFICATIONS TEST CONDITIONS UNIT VCC (V) 4.5 to 5.5 4.5 to 5.5 4.5 VIH or VIL VIH or VIL VIH or VIL VIH or VIL VIH or VIL VIH or VIL VCC or GND −40 to +85 −40 to +125 VI OTHER min. typ. max. min. max. min. max. VIH HIGH level input voltage LOW level input voltage HIGH level output voltage all outputs HIGH level output voltage standard outputs HIGH level output voltage bus driver outputs LOW level output voltage all outputs LOW level output voltage standard outputs LOW level output voltage bus driver outputs 2.0 1.6 2.0 2.0 V VIL 1.2 0.8 0.8 0.8 V VOH 4.4 4.5 4.4 4.4 V −IO = 20 µA VOH 3.98 4.32 3.84 3.7 V 4.5 −IO = 4.0 mA VOH 3.98 4.32 3.84 3.7 V 4.5 −IO = 6.0 mA VOL 0 0.1 0.1 0.1 V 4.5 IO = 20 µA VOL 0.15 0.26 0.33 0.4 V 4.5 IO = 4.0 mA VOL 0.16 0.26 0.33 0.4 V 4.5 IO = 6.0 mA ±II input leakage current 3-state OFF-state current 0.1 1.0 1.0 µA 5.5 ±IOZ 0.5 5.0 10.0 µA 5.5 VIH or VIL VO = VCC or GND per input pin; other inputs at VCC or GND; IO = 0 ICC quiescent supply current SSI flip-flops MSI LSI 2.0 4.0 8.0 50.0 20.0 40.0 80.0 500 40.0 80.0 160.0 µA 5.5 5.5 5.5 5.5 VCC or GND IO = 0 IO = 0 IO = 0 IO = 0 1000 March 1988 5 Philips Semiconductors HCMOS family characteristics FAMILY SPECIFICATIONS Tamb (°C) 74HCT SYMBOL PARAMETER +25 −40 to +85 −40 to +125 UNIT TEST CONDITIONS VCC (V) 4.5 to 5.5 VI OTHER min. typ. max. min. max. min. max. ∆ICC additional quiescent supply current per input pin for unit load coefficient is 1 (note 1) 100 360 450 490 µA VCC other inputs at −2.1 V VCC or GND; IO = 0 Note 1. The additional quiescent supply current per input is determined by the ∆ICC unit load, which has to be multiplied by the unit load coefficient as given in the individual data sheets. For dual supply systems the theoretical worst-case (VI = 2.4 V; VCC = 5.5 V) specification is: ∆ICC = 0.65 mA (typical) and 1.8 mA (maximum) across temperature. March 1988 6 Philips Semiconductors HCMOS family characteristics DC CHARACTERISTICS FOR 74HCU Voltages are referenced to GND (ground = 0 V) Tamb (°C) 74HCU SYMBOL PARAMETER +25 −40 to +85 FAMILY SPECIFICATIONS TEST CONDITIONS UNIT V CC (V) V 2.0 4.5 6.0 0.3 0.9 1.2 1.8 4.0 5.5 3.7 5.2 V V V 2.0 4.5 6.0 2.0 4.5 6.0 4.5 6.0 0.2 0.5 0.5 0.4 0.4 1.0 µA V V 2.0 4.5 6.0 4.5 6.0 6.0 VIH or VIL VCC or GND VIH or VIL VCC or GND VCC or GND VCC or GND IO = 0 −IO = 20 µA −IO = 20 µA −IO = 20 µA −IO = 4.0 mA −IO = 5.2 mA IO = 20 µA IO = 20 µA IO = 20 µA IO = 4.0 mA IO = 5.2 mA −40 to +125 VI OTHER min. typ. max. min. max. min. max. VIH HIGH level input voltage 1.7 3.6 4.8 VIL LOW level input voltage 1.4 2.6 3.4 0.6 1.9 2.6 VOH HIGH level output voltage 1.8 4.0 5.5 VOH HIGH level output voltage LOW level output voltage 2.0 4.5 6.0 0.3 0.9 1.2 1.8 4.0 5.5 3.84 5.34 0.2 0.5 0.5 0.2 0.5 0.5 0.33 0.33 1.0 1.7 3.6 4.8 0.3 0.9 1.2 1.7 3.6 4.8 3.98 4.32 5.48 5.81 0 0 0 VOL VOL LOW level output voltage input leakage current 0.15 0.26 0.16 0.26 0.1 ±II ICC quiescent supply current SSI 2.0 20.0 40.0 µA 6.0 March 1988 7 Philips Semiconductors HCMOS family characteristics AC CHARACTERISTICS FOR 74HC GND = 0 V; tr = tf = 6 ns; CL = 50 pF Tamb (°C) 74HC SYMBOL PARAMETER +25 −40 to +85 FAMILY SPECIFICATIONS TEST CONDITIONS UNIT VCC (V) 2.0 4.5 6.0 ns 2.0 4.5 6.0 Figs 3 and 4 WAVEFORMS −40 to +125 max. 110 22 19 90 18 15 min. typ. max. min. max. min. tTHL/ tTLH output transition time standard outputs 19 7 6 tTHL/ tTLH output transition time bus driver outputs 14 5 4 AC CHARACTERISTICS FOR 74HCU GND = 0 V; tr = tf = 6 ns; CL = 50 pF Tamb (°C) 74HCU SYMBOL PARAMETER +25 −40 to +85 75 15 13 60 12 10 95 19 16 75 15 13 ns Figs 3 and 4 TEST CONDITIONS UNIT VCC (V) 2.0 4.5 6.0 WAVEFORMS −40 to +125 max. 110 22 19 min. typ. max. min. max. min. tTHL/ tTLH output transition time 19 7 6 AC CHARACTERISTICS FOR 74HCT GND = 0 V; tr = tf = 6 ns; CL = 50 pF Tamb (°C) 74HCT SYMBOL PARAMETER +25




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