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6N1135/ 6N1136
Vishay Semiconductors
High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated
Features
• • • • • • • • • Operating Temperature from -55 °C to +110 °C Isolation Test Voltage: 5300 VRMS TTL Compatible High Bit Rates: 1.0 MBd Bandwidth 2.0 MHz Open-Collector Output External Base Wiring Possible Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
NC A C NC
1 2 3 4
8 7 6 5
C (VCC) B (VB) C (VO) E (GND)
i179081
e3
Pb
Pb-free
Agency Approvals
• UL 1577 - File No. E52744 System Code H or J • DIN EN 60747-5-2 (VDE0884) • CUL - File No. E52744, equivalent to CSA bulletin 5A
Signals can be transmitted between two electrically separated circuits up to frequencies of 2.0 MHz. The potential difference between the circuits to be coupled should not exceed the maximum permissible reference voltages
Description
The 6N1135 and 6N1136 are 110 °C rated optocouplers with a GaAIAs infrared emitting diode, optically coupled with an integrated photo detector which consists of a photo diode and a high-speed transistor in a DIP-8 plastic package.
Order Information
Part 6N1135 6N1136 6N1135-X007 6N1136-X006 6N1136-X007 6N1136-X009 Remarks CTR ≥ 7 %, DIP-8 CTR ≥ 19 %, DIP-8 CTR ≥ 7 %, SMD-8 (option 7) CTR ≥ 19 %, DIP-8 400 mil (option 6) CTR ≥ 19 %, SMD-8 (option 7) CTR ≥ 19 %, SMD-8 (option 9)
For additional information on the available options refer to Option Information.
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Reverse voltages Forward current Peak forward current Thermal resistance Power dissipation Tamb = 70 °C t = 1.0 ms, duty cycle 50 % Maximum surge forward current t ≤ 1.0 µs, 300 pulses/s Test condition Symbol VR IF IFM IFSM Rth Pdiss Value 5.0 25 50 1.0 700 45 Unit V mA mA A K/W mW
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Vishay Semiconductors Output
Parameter Supply voltage Output voltage Emitter-base voltage Output current Maximum output current Base current Thermal resistance Power dissipation Tamb = 70 °C Pdiss IB Test condition Symbol VCC VO VEBO IO Value - 0.5 to 15 - 0.5 to 15 5.0 8.0 16 5.0 300 100 Unit V V V mA mA mA K/W mW
Coupler
Parameter Isolation test voltage (between t = 1.0 s emitter and detector climate per DIN 50014 part 2, NOV 74 Storage temperature range Ambient temperature range Soldering temperature max. ≤ 10 s, dip soldering ≥ 0.5 mm from case bottom Test condition Symbol VISO Value 5300 Unit VRMS
Tstg Tamb Tsld
- 55 to + 125 - 55 to + 110 260
°C °C °C
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Forward voltage Breakdown voltage Reverse current Capacitance Temperature coefficient, forward voltage Test condition IF = 16 mA IR = 10 µA VR = 5.0 V VR = 0 V, f = 1.0 MHz IF = 16 mA Symbol VF VBR IR CI ∆VF/∆TA 5.0 0.5 125 -1.7 10 Min Typ. 1.6 Max 1.9 Unit V V µA pF mV/°C
Output
Parameter Logic low supply current Supply current, logic high Output voltage, output low Test condition IF = 16 mA, VO open, VCC = 15 V IF = 0 mA, VO open, VCC = 15 V IF = 16 mA, VCC = 4.5 V, IO = 1.1 mA IF = 16 mA, VCC = 4.5 V, IO = 2.4 mA Output current, output high IF = 0 mA, VO = VCC = 5.5 V IF = 0 mA, VO = VCC = 15 V 6N1135 6N1136 Part Symbol ICCL ICCH VOL VOL IOH IOH Min Typ. 150 0.01 0.1 0.1 3.0 0.01 1 0.4 0.4 500 1 Max Unit µA µA V V nA µA
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6N1135/ 6N1136
Vishay Semiconductors
Coupler
Parameter Capacitance (input-output) Current Transfer Ratio Test condition f = 1.0 MHz IF = 16 mA, VO = 0.4 V, VCC = 4.5 V IF = 16 mA, VO = 0.5 V, VCC = 4.5 V 6N1135 6N1136 6N1135 6N1136 Part Symbol CIO CTR CTR CTR CTR 7 19 5 15 Min Typ. 0.6 16 35 Max Unit pF % % % %
Switching Characteristics
Parameter High-low Low-high Test condition IF = 16 mA, VCC = 5.0 V, RL = 4.1 kΩ IF = 16 mA, VCC = 5.0 V, RL = 1.9 kΩ IF = 16 mA, VCC = 5.0 V, RL = 4.1 kΩ IF = 16 mA, VCC = 5.0 V, RL = 1.9 kΩ Part 6N1135 6N1136 6N1135 6N1136 Symbol tPHL tPHL tPLH tPLH Min Typ. 0.3 0.2 0.3 0.2 Max 1.5 0.8 1.5 0.8 Unit µs µs µs µs
Pulse generator ZO=50 Ω tr,tf=5 ns duty cycle 10% t≤100 µs
1 IF 2
IF Monitor
IF
t
8 7 6 5
RL
5V
VO
5V 1.5 V t
3
ı 100 Ω
VO CL 15 pF
VOL tPHL
4
tPLH
i6n135_01
Figure 1. Switching Times
Common Mode Transient Immunity
Parameter High Low Test condition IF = 0 mA, VCM = 10 VP-P, VCC = 5.0 V, RL = 4.1 kΩ IF = 0 mA, VCM = 10 VP-P, VCC = 5.0 V, RL = 1.9 kΩ IF = 16 mA, VCM = 10 VP-P, VCC = 5.0 V, RL = 4.1 kΩ IF = 16 mA, VCM = 10 VP-P, VCC = 5.0 V, RL = 1.9 kΩ Part 6N1135 6N1136 6N1135 6N1136 Symbol | CMH | | CMH | | CML | | CML | Min Typ. 1000 1000 1000 1000 Max Unit V/µs V/µs V/µs V/µs
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6N1135/ 6N1136
Vishay Semiconductors
VCM 10 V IF 1 2 3 4 8 7 6 5 RL VO VO 5V A: IF=0 mA +VCM 5V 0V 10% tr tf 90% t 90% 10%
A B VFF
Pulse generator ZO=50 tr,tf=8 ns
VO
t
VOL
B: IF=16 mA t
i6n135_02
Figure 2. Common-Mode Interference Immunity
Safety and Insulation Ratings
As per IEC60747-5-2, §7.4.3.8.1, this optocoupler is suitable for "safe electrical insulation" only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Climatic Classification (according to IEC 68 part 1) Pollution degree (DIN VDE 0109) Comparative tracking index per DIN IEC112/VDE 0303 part 1, group IIIa per DIN VDE 6110 VIOTM VIORM Isolation resistance VIO = 500 V, Tamb = 25 °C VIO = 500 V, Tamb = 100 °C PSI ISI TSI Creepage Clearance Insulation thickness VIOTM VIORM RIO RIO PSI ISI TSI 7.0 7.0 0.2 175 Test condition Symbol Min Typ. 55/110/21 2.0 399 Max Unit
8000 630 10
12
V V Ω Ω 500 300 175 mA mW °C mm mm mm
1011
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6N1135/ 6N1136
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
2.3 2.1
V F – Forward Voltage ( V ) ICE0– Collector Emitter Leakage Current (nA)
1000 100 VCC = VCE = 15 V 10 1 0.1 VCC = VCE = 5 V
–55°C 0°C
1.9 1.7 1.5 1.3 1.1 0.9 0.7 0.01
25°C 50°C 110°C
0.10
1.00
10.00
100.00
0.01 –55 –35 –15 5
25 45 65 85 105 125
17585
IF – Forward Current ( mA )
17590
Tamb – Ambient Temperature ( _C )
Figure 3. Forward Voltage vs. Forward Current
Figure 6. Collector-Emitter Dark Current vs. Ambient Temperature
12 11 10 9 8 7 6 5 4 3 2 1 0
2.0 IF = 25 mA
CTR Norm – Normalized CTR
1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 Normalized to IF = 10 mA, Tamb = 25_C, VCC= 5 V VO = 0.4 V, saturated 25 45 65 85 105 125 10 mA 5 mA IF = 1 mA
I C – Collector Current ( mA )
20 mA 15 mA 10 mA
5 mA Tamb = 25_C, VCC= 5 V, non–saturated 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
0.0 –55 –35 –15 5
17630
17586
VCE – Collector Emitter Voltage ( V )
Tamb – Ambient Temperature ( °C )
Figure 4. Collector Current vs. Collector Emitter Voltage
Figure 7. Normalized Current Transfer Ratio vs. Ambient Temperature
8
I C – Collector Current ( mA ) CTR Norm – Normalized CTR
2.50 Tamb = 25_C, VCC= 5 V, saturated IF = 25 mA 20 mA 15 mA 10 mA 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0.25 Normalized to IF = 16 mA, Tamb = 25_C, VCC= 5 V VO = 0.4 V, saturated 25 45 65 85 105 125 16 mA 10 mA 5 mA IF = 1 mA
7 6 5 4 3 2 1 0 0.0
5 mA 1 mA 0.1 0.2 0.3 0.4 0.5
0.00 –55 –35 –15 5
17631
17629
VCE – Collector Emitter Voltage ( V )
Tamb – Ambient Temperature ( °C )
Figure 5. Collector Current vs. Collector Emitter Voltage
Figure 8. Normalized Current Transfer Ratio vs. Ambient Temperature
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7 IF = 20 mA
I C – Collector Current ( mA )
1.4 1.3 16 mA
Normalized h FE
6 5 4 3 2 1 1 mA 0 –55 –35 –15 5 25 45 65 85 105 125 Tamb – Ambient Temperature ( °C ) VCC= 5 V, VO = 0.4 V, saturated 2 mA
50°C
110°C
1.2 1.1 25°C 1.0 0.9 0.8 0.7 0.6 0.5 0.10
17634
10 mA
0°C –55°C Normalized to IB = 20 µA, Tamb = 25_C, VO = 5 V, non saturated 1.00 10.00 IB – Base Current ( mA ) 100.00
17587
Figure 9. Output Current vs. Temperature
Figure 12. Normalized HFE vs. Base Current
2.0
CTR Norm – Normalized CTR
2.0 IF = 1 mA 5 mA
Normalized h FE
1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2
1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.10
17635
110°C 50°C
10 mA
25°C 0°C –55°C Normalized to IB = 20 µA, Tamb = 25_C, VO = 0.4 V, saturated 1.00 10.00 100.00
Normalized to IF = 10 mA, Tamb = 25_C, VCC= 5 V VO = 5 V, non–saturated 25 45 65 85 105 125
0.0 –55 –35 –15 5
17632
Tamb – Ambient Temperature ( °C )
IB – Base Current ( mA )
Figure 10. Normalized Current Transfer Ratio vs. Ambient Temperature
Figure 13. Normalized HFE vs. Base Current
2.0
CTR Norm – Normalized CTR
1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2
IF = 1 mA 5 mA
100.00 –55°C
Ip – Photo Current ( mA )
10.00
0°C
10 mA 16 mA Normalized to IF = 16 mA, Tamb = 25_C, VCC= 5 V VO = 5 V, non–saturated 25 45 65 85 105 125
1.00
25°C 50°C
0.10
110°C VCC= 5 V
0.0 –55 –35 –15 5
17633
0.01 0.01
17636
0.10
1.00
10.00
100.00
Tamb – Ambient Temperature ( °C )
IF – Forward
